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    NE23300 Search Results

    NE23300 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE23300 NEC Super low noise HJ FET (space qualified). Original PDF

    NE23300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE23300

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE23300 NE23300 24-Hour

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz V ds = 2 V, I ds = 10 mA • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz cû • GATE LENGTH: 0 3 \im


    OCR Scan     		PDF NE23300 NE23300 CHARACTERIST0071" lS211 IS12S21I 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 mA 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: CO 10.5 dB Typical at 12 GHz •o • GATE LENGTH: 0.3 urn


    OCR Scan     		PDF NE23300 NE23300

    NEC Ga FET marking L

    Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
    Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima


    OCR Scan     		PDF GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a