NDB4060L
Abstract: NDP4060L 24V64 zener diode 12v 0.5 w
Text: April 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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NDP4060L
NDB4060L
NDB4060L
24V64
zener diode 12v 0.5 w
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NDB4060L
Abstract: NDP4060L
Text: & Na t i o n a I Semiconductor” A p ril 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode • 15A, 60V. RDS 0NI = O .m @ VGS = 5V power field effect transistors are produced using
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NDP4060L/
NDB4060L
b5G1130
00MD2MM
NDP4060L
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D SEM IC ONDUCTO R April 1996 tm NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's
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NDP4060L
NDB4060L
NDB4060L
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NDP4060L
Abstract: NDB4060L
Text: A p ril 1996 FAIRCHILD Ml C O N D U C T O R i NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's
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NDP4060L
NDB4060L
NDB4060L
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NDB4060L
Abstract: No abstract text available
Text: ^ A I R C H April 1996 I I - D M l C O IN D U C T O R NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's
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NDP4060L
NDB4060L
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FDP2670
Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
Text: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and
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FDP2670/FDB2670
FDP2670
D2Pak Package dimensions
CBVK741B019
EO70
F63TNR
FDB2670
FDP7060
NDP4060L
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CBVK741B019
Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
Text: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDP6644/FDB6644
CBVK741B019
EO70
F63TNR
FDB6644
FDP6644
FDP7060
NDP4060L
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high voltage mosfet, to-220 case
Abstract: No abstract text available
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
high voltage mosfet, to-220 case
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Untitled
Abstract: No abstract text available
Text: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6690S/FDB6690S
FDP6690S
FDP6690S/FDB6690S
FDP6035AL/FDB6035AL
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
spb32N03l
rfp60n06
SSH6N80
FQP50N10
FSD6680
STP55NF06 AND ITS EQUIVALENT
SFP70N03
HGTG*N60A4D
irf630 irf640
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Untitled
Abstract: No abstract text available
Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDP6060
NDB6060
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T0-263
Abstract: CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220
Text: FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage
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FDP4020P/FDB4020P
O-220
O-263
T0-263
CBVK741B019
FDB4020P
FDP4020P
FDP7060
low threshold mosfet p-channel TO-220
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FDB7045L
Abstract: CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L
Text: FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDP7045L/FDB7045L
FDB7045L
CBVK741B019
EO70
F63TNR
FDP7045L
FDP7060
NDP4060L
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TO220 Semiconductor Packaging
Abstract: CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild
Text: FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDP6676/FDB6676
TO220 Semiconductor Packaging
CBVK741B019
EO70
F63TNR
FDB6676
FDP6676
FDP7060
NDP4060L
marking code ng Fairchild
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CBVK741B019
Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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NDP6060L
NDB6060L
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB6060L
NDP4060L
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12SnOFC
Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will
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HUF75343P3
HUF75542P3
HUF75631P3
HUF75645P3
HUF75939P3
HUF76107P3
HUF76132P3
HUF76143P3
HUF76419P3
HUF76432P3
12SnOFC
BQ37
PMC-90
PMC-90 leadframe material
MKT-TO220B03
FDP3672
HRF3205 equivalent mosfet number
Tamac4
a105 transistor
HRF3205 equivalent
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mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P
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2N7000
IRF7203
FDS9435A
2N7002
OT-23,
IRF7204
NDS8434A
BS170
mosfet cross reference
SMP40N06
SMP75N06-08
SI9952DY
SMP60N03-10L
IRFZ44 TO-263
Si9948DY
irf1010e equivalent
IRLL014N
NDT3055L
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Untitled
Abstract: No abstract text available
Text: FDP5645/FDB5645 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 83 A, 60 V.
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FDP5645/FDB5645
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FDP5680
Abstract: No abstract text available
Text: FDP5680/FDB5680 60V N-Channel PowerTrenchTM MOSFET General Description Features 40 A, 60 V. RDS ON = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters
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FDP5680/FDB5680
FDP5680
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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Untitled
Abstract: No abstract text available
Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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NDP6060L
NDB6060L
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MOSFET and parallel Schottky diode
Abstract: CBVK741B019 EO70 FDB6644S FDP6644 FDP6644S FDP7060
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
MOSFET and parallel Schottky diode
CBVK741B019
EO70
FDB6644S
FDP6644
FDP7060
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m 9835
Abstract: NDP4060L CBVK741B019 EO70 F63TNR FDB5690 FDP5690 FDP7060
Text: FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description Features • 32 A, 60 V. RDS ON = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters
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FDP5690/FDB5690
m 9835
NDP4060L
CBVK741B019
EO70
F63TNR
FDB5690
FDP5690
FDP7060
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zener diode 3.0 b2
Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDP7061L
NDB7061L
zener diode 3.0 b2
m 9835
CBVK741B019
EO70
F63TNR
FDP7060
L86Z
NDB7061L
NDP4060L
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