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NSDU57 Abstract: 0410 NSDU51 2N4030 2N4031 2N4032 2N4033 2N4036 2N4037 2N4314 Text: NATL SEMICOND {DISCRETE} 6 5 0 1130 NATL BÛ SEMICOND, D E \| b S 0 1 1 3 0 DOBSHSM 1 \| 28C D I S C R E TE? T ~ Test Conditions l l " CL N <£> r» <0 CO CO ' r<0 r* «5 CO co r ID Ed P<0 r- r>. <0 tf> r-» ID 35454 z y (O D " 0 - 0 / o r- z " 0 s' 3 0	OCR Scan	PDF	2N4030 2N4031 2N4032 2N4033 NSDU57 0410 NSDU51 2N4036 2N4037 2N4314
Tf 227 Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16 Text: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector	OCR Scan	PDF	PN2369A MMBT2369A MMPQ2369 OT-23 SOIC-16 bS01130 0040bc Tf 227 MMBT2369A MMPQ2369 PN2369A SOIC-16
4-221 Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET Text: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	OCR Scan	PDF	NDS9958 b501130 0Q400bl 4-221 transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
BAV19 Abstract: BAV20 BAV21 FDH400 Text: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies National Semiconductor' BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Proce ss 1J. N S C alternate for B A V 1 9 & BAV20: FDH400. Absolute Maximum Ratings* Symbol W lv TA = 25°C unless otherwise noted	OCR Scan	PDF	BAV19 DO-35 BAV19 BAV20: FDH400. BAV20 BAV21 bSD1130 b5G1130 FDH400
NDS9945 Abstract: 2501lA Text: National May 1996 Semiconductor" NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e pow er fie ld effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.	OCR Scan	PDF	NDS9945 bSD113G b5G1130 004DGDÃ NDS9945 2501lA
NDS9942 Abstract: p channel mosfet Text: National e * M a y 19 96 Semiconductor" NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	OCR Scan	PDF	NDS9942 SD1130 NDS9942 p channel mosfet
LC 500-S Abstract: 2N5551 MMBT5551 S4002 Text: 2N5551 I MMBT5551 & D iscrete P O W ER & S ig n a l T echnologies _ National S e m i c o n d u c t o r ” MMBT5551 2N5551 NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for g en e ral pu rp ose high voltage am plifiers an d g a s d isc h a rg e d isp la y driving. S o u rc e d from P ro c e s s 16.	OCR Scan	PDF	b5G1130 LC 500-S 2N5551 MMBT5551 S4002
TRANSISTOR 2SC 950 Abstract: NDT454P c25f Text: ß National Semiconductor" June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	PDF	NDT454P Hig13. OT-223 Vos--10V bS0113D D0401SE TRANSISTOR 2SC 950 NDT454P c25f
NDS8928 Abstract: ab-5 national Text: National Semiconductor July 1996 ” NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's pro p rie ta ry, h ig h cell density, DMOS	OCR Scan	PDF	NDS8928 b5D113D bSD113D NDS8928 ab-5 national