NB111EY Search Results

NB111EY Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NB111EYNB222Y		Unknown	Cross Reference Datasheet		Scan	PDF

NB111EY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NA51W Abstract: NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322 Text: NB311,312,313 NPN , NB321,3 2 2 ,323(PNP) NATL SEUICOND {DISCRETE} 6501130 NATL ifl EMICOND, (DISCRETE) 28C National Semiconductor r - 35601 n - 2 , } 3 ^ 0 - 7 NB311, 312, 313 (NPN) * , NB321, 3 2 2,3 N P ) 1,5ArnP com plem entary pow er drivers 2 ,3 23(P	OCR Scan	PDF	bSD113D NB311, NB321, andTO-202 b5D113D NB313Y" NB022EY NR001E NB113EY NA51W NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322
NA21 npn Abstract: NA21E NB111 hf amplifier 600 watts NA21 NB111E NB011 NA21EG NR001E SSL-3 Text: NATL SENICOND {DISCRETE} 6 5 0 1130 N Â T L CL z Q. CM CM < z SEMICOND, Efl DISCRETE < 28C National mim Semiconductor NA21 (NPN) N A 22(PN P) T 35561 - 2 - 9 - [T~\| p a c k a g e and lead coding • 20 Volt/1.5 Amp rating ■ 1.2 Watts practical power dissipation (TO-92 PLUS TM)	OCR Scan	PDF	NB011EY NR001E NA22EG/J NB111EH/JQ4 NA21EG/J NB011EY NA21EG/J NB111EY NA21 npn NA21E NB111 hf amplifier 600 watts NA21 NB111E NB011 NA21EG SSL-3
40khz ultrasonic transmitter Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k Text: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~\| package and lead coding features • 20 Volt/800 mA Amp rating	OCR Scan	PDF	SD113G Volt/800 NB111EH/J NA01EG/J NR001E 380mW NR001E 40khz ultrasonic transmitter 40KHZ ULTRASONIC NA01 nb111eh NB021EY toko k
lg crt tv Abstract: NB212 NB211 NB222 NB112EY NB111 NB022 NB022EY Text: bSD1130 003 SST7 'NATL SEMICOND {DISCRETE} 6501130 NATL SEMICOND, Z CL CO CM CM 28C 3 5 5 9 7 D I S CR ET E D T-ll-Z 3 E JI National m m Semiconductor as CM CM CM NB221 222 2 2 3 ÎP N P ) 500m A medium current driver transistors features CM CM CÛ z Q.	OCR Scan	PDF	bSD1130 003SST7 NB221 500mA rec-50 SD113D nb022ey nb123ey nb113ey nb111ey lg crt tv NB212 NB211 NB222 NB112EY NB111 NB022 NB022EY
40khz ultrasonic transmitter Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY Text: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~\| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §	OCR Scan	PDF	SD113G 800mA Volt/800 NB111EH/J NA01EG/J NR001E NA01EG/J 380mW 40khz ultrasonic transmitter 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NB021EY
NA72 Abstract: NB313Y NB022EY NB111EY NB121EY NB123EY NB323Y NR001E transistor A05 2TO220 Text: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h - NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C D ISCRETE 35561 National Semiconductor T ' 2 ? - r < z a. z < Z NA 71 (NPN) NA 7 2 (PNP) ^ AmP com plem entary power tra n sisto rs IT ! packages and lead coding	OCR Scan	PDF	tSD113D O-126 O-220 100mA 200mA NB323Y NA72W NA71W 100pF. NB022EY NA72 NB313Y NB022EY NB111EY NB121EY NB123EY NB323Y NR001E transistor A05 2TO220
capacitor discharge ignition Abstract: NB313Y NA61W NB022EY 113D capacitor nb121 NB111 NA61 NB022 Text: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, D F \| b S D 1 1 3 0 003SS77 b DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding	OCR Scan	PDF	003SS77 O-126 O-22D O-220 NB022EY NB123EY NR001E NB113EY NB111EY capacitor discharge ignition NB313Y NA61W 113D capacitor nb121 NB111 NA61 NB022
capacitor discharge ignition Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32 Text: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF\|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding	OCR Scan	PDF	003SS77 O-126 O-220 IO11F NB022EY NB123EY NR001E NB113EY NB111EY NB121EY capacitor discharge ignition NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
audio power amplifier 500 watt Abstract: 3a npn to126 transistor Text: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h- NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C 35561 D ISCRETE T'2?'// National Semiconductor - r < z a. z < Z NA71 (NPN) NA7 2 (PNP) ^ AmP com plem entary pow er tra n sisto rs IT! packages and lead coding	OCR Scan	PDF	O-126 O-220 100mA 200mA O-126 O-220 D03SS NB022EY NB123EY NR001E audio power amplifier 500 watt 3a npn to126 transistor
NB111E Abstract: NB011 NA21E nb111 NA21 NA21 npn L0121 NA22 NR001E NB111EH Text: NATL SENICOND {DISCRETE} 650 1130 NÂTL SEMICOND, "äfl DlfJ bSDllHD [][\|3S5bl S DISCRETE 28C 35561 T z D CL z fjgA National Q. CM CM < z NA21 (NPN) N A 22(PN P) z 1 .5 A m p c o m p le m e n ta ry p o w e r t r a n s is t o r s [T~\| p a c k a g e and lead coding	OCR Scan	PDF	JtSD113D nb011ey nr001e na22eg/j nb111eh/jq4 na21eg/j 700mW na21eg/j NB111E NB011 NA21E nb111 NA21 NA21 npn L0121 NA22 NB111EH