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    NA61 Search Results

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    NA61 Price and Stock

    Eaton Bussmann FNA-6-10

    FUSE CRTRDGE 6MA 250VAC CYLINDR
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    DigiKey FNA-6-10 Bulk 10
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    OMRON Industrial Automation G3NA-610B-AC100-240

    SSR RELAY SPST-NO 10A 360-660V
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    DigiKey G3NA-610B-AC100-240 Bulk 1
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    TE Connectivity DBAS-79-3-0-SN-A6161

    DBAS 79-3-0 SN-A6161
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    DigiKey DBAS-79-3-0-SN-A6161 Bulk 10
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    TE Connectivity 983-7S-14-07-SN-A6160

    983-7S 14-07 SN-A6160
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    DigiKey 983-7S-14-07-SN-A6160 Bag 20
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    TE Connectivity 983-6S-12-12-SN-A6160

    983-6S 12-12 SN-A6160
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    NA61 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NA61U Unknown Cross Reference Datasheet Scan PDF
    NA61U Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NA61U Unknown Shortform Transistor Datasheet Guide Short Form PDF
    NA61U Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    NA61W Unknown Cross Reference Datasheet Scan PDF
    NA61W Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NA61W Unknown Shortform Transistor Datasheet Guide Short Form PDF
    NA61W Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    NA61 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    wiper motor operation with 12v relay

    Abstract: FTR-P2CN012W1 FTR-P2CN010W1 FBR510 FTR-P2CN009W1 SCHEMATIC SOUND BOARD fujitsu FTR-p2 relay Chattering relay
    Text: SILENT TWIN RELAY FOR AUTOMOTIVE APPLICATIONS 1POLE X 2, H-BRIDGE, 25A FTR-P2 SERIES • FEATURES ● ● ● ● ● ● ● Low operating sound An original silent mechanism decreases the propagation of operating sound when mounted on a PCB. Average sound pressure:


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    fujitsu FTR-p2 relay

    Abstract: No abstract text available
    Text: SILENT TWIN RELAY FOR AUTOMOTIVE APPLICATIONS 1POLE X 2, H-BRIDGE, 25A FTR-P2 SERIES RoHS compliant n FEATURES Low operating sound An original silent mechanism decreases the propagation of operating sound when mounted on a PCB. Average sound pressure: 50dB at 5


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    m6845

    Abstract: NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics
    Text: “The new 0.6µm gate array and standard cell families from AMI provide outstanding quality and selection . . . setting performance standards in 0.6µm ASIC products . . . ” • 130 ps gate delays fanout = 2, interconnect length = 0mm ■ Double and Triple Metal Interconnect; up to 900,000 gate


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    PDF Table128, m6845 NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics

    NA38

    Abstract: NA63 YN17 YN24 YN26 na46 YN11 na51 AE12AE13 YN40
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information 2.5Gb/s 64x65 Crosspoint Switch VSC836 Features • 64 Input by 65 Output Crosspoint Switch • On-chip Input Terminations • 2.5Gb/s NRZ Data Bandwidth • PECL Compatible Differential Output Driver


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    PDF VSC836 160Gb/s 64x65 VSC836 G52248-0, NA38 NA63 YN17 YN24 YN26 na46 YN11 na51 AE12AE13 YN40

    NA2X

    Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


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    wiper motor

    Abstract: P5CN012 relay 12 v dc 10a dual automotive FTR-P5CN010W1 FTR-P5CN012W1 fujitsu FTR-p5 relay silent relay
    Text: FTR-P5 SERIES SILENT RELAY FOR AUTOMOTIVE APPLICATIONS 1 POLE—25 A FTR-P5 SERIES • FEATURES ● ● ● ● ● ● ● Low operating sound An original silent mechanism decreases the propagation of operating sound when mounted on a PCB. Average sound pressure: 50dB at 5 cm .


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    PDF POLE--25 wiper motor P5CN012 relay 12 v dc 10a dual automotive FTR-P5CN010W1 FTR-P5CN012W1 fujitsu FTR-p5 relay silent relay

    na44

    Abstract: NA51 transistor datasheet na52 transistor datasheet na60 U2 A63 NA11 NA12 NA13 NA43 na46
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information 2.5Gb/s 64x65 Crosspoint Switch VSC836 Features • 64 Input by 65 Output Crosspoint Switch • On-chip Input Terminations • 2.5Gb/s NRZ Data Bandwidth • PECL Compatible Differential Output Driver


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    PDF 64x65 VSC836 160Gb/s VSC836 G52248-0, na44 NA51 transistor datasheet na52 transistor datasheet na60 U2 A63 NA11 NA12 NA13 NA43 na46

    TTL 740 NAND propagation delay

    Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor
    Text: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities


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    takamisawa 12v

    Abstract: takamisawa relay takamisawa PCB relay silent relay takamisawa wiper motor operation with 12v relay takamisawa relay 12 FTR-P5CN010W1 FTR-P5CN012W1 takamisawa relay NA
    Text: FUJITSU TAKAMISAWA COMPONENT CATALOG SILENT RELAY FOR AUTOMOTIVE APPLICATIONS 1 POLE—25 A FTR-P5 SERIES • FEATURES ● ● ● ● ● ● ● Low operating sound An original silent mechanism decreases the propagation of operating sound when mounted on a PCB.


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    PDF POLE--25 takamisawa 12v takamisawa relay takamisawa PCB relay silent relay takamisawa wiper motor operation with 12v relay takamisawa relay 12 FTR-P5CN010W1 FTR-P5CN012W1 takamisawa relay NA

    p5cn0

    Abstract: FTR-P5CN012W1 L 450 diod x1 diod
    Text: FTR-P5 SERIES SILENT RELAY FOR AUTOMOTIVE APPLICATIONS 1 POLE—25 A FTR-P5 SERIES RoHS compliant n FEATURES Low operating sound An original silent mechanism decreases the propagation of operating sound when mounted on a PCB. Average sound pressure: 50dB at 5 cm .


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    PDF POLE--25 p5cn0 FTR-P5CN012W1 L 450 diod x1 diod

    NA50

    Abstract: nA41 na44 NA19 NA63 AE12AE13 NA38
    Text: VITESSE SEMICONDUCTOR CORPORATION Datasheet 1.6Gb/s 64x64 Crosspoint Switch VSC852 Features • 64 Input by 64 Output Non-blocking • Fully Differential Data Path, PECL Compatible • Full Broadcast/Multicast Capability • On-chip Input Terminations • 1.6 Gbits/sec NRZ Data Bandwidth


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    PDF VSC852 64x64 VSC852 G52245-0, NA50 nA41 na44 NA19 NA63 AE12AE13 NA38

    NA52 transistor datasheet

    Abstract: na52 Multiplexor 64 inputs na44 NA51 transistor data sheet NA51 transistor datasheet na31 NA62 NA11 NA12
    Text: VITESSE SEMICONDUCTOR CORPORATION Data Sheet 1.6Gb/s 64x64 Crosspoint Switch VSC852 Features • 64 Input by 64 Output Non-Blocking • Fully Differential Data Path, PECL-Compatible • Full Broadcast/Multicast Capability • On-Chip Input Terminations • 1.6Gb/s NRZ Data Bandwidth


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    PDF 64x64 VSC852 VSC852 64x64 G52245-0, NA52 transistor datasheet na52 Multiplexor 64 inputs na44 NA51 transistor data sheet NA51 transistor datasheet na31 NA62 NA11 NA12

    8085 mini projects

    Abstract: full subtractor circuit using decoder and nand ga DF102 ic tda 2030 8085 mini projects with low budget AMI 9198 na44 DF422 16 BIT ALU design with verilog/vhdl code AMI 8232
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,/6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


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    relay low profile dual form-c

    Abstract: Double make contact automotive relay mercury wetted contact relay relay 12 v dc 10a dual relay 12 v dc 10a dual automotive FTR-P2CN012W1 relay 17a 12vdc electromechanical relay 6v
    Text: SILENT TWIN RELAY FOR AUTOMOTIVE APPLICATIONS 1POLE X 2, H-BRIDGE, 25A FTR-P2 SERIES RoHS compliant n FEATURES l Low operating sound An original silent mechanism decreases the propagation of operating sound when mounted on a PCB. Average sound pressure: 50dB at 5


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    NA21 transistor

    Abstract: kt 825 equivalent DF101 NA21 MGMC51 DL651 NA51 transistor power transistor na51 ami equivalent gates ami equivalent gates of each core cell
    Text: “The new 0.8µm Standard Cell family from AMI delivers superior performance and flexibility . . . one of the lowest cost and highest performance 0.8µm standard cell ASIC products available today . . .” • Designed for 3V, 5V, or 3V/5V mixed supplies


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    capacitor discharge ignition

    Abstract: NB313Y NA61W NB022EY 113D capacitor nb121 NB111 NA61 NB022
    Text: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, D F | b S D 1 1 3 0 003SS77 b DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding


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    PDF 003SS77 O-126 O-22D O-220 NB022EY NB123EY NR001E NB113EY NB111EY capacitor discharge ignition NB313Y NA61W 113D capacitor nb121 NB111 NA61 NB022

    capacitor discharge ignition

    Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32
    Text: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding


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    PDF 003SS77 O-126 O-220 IO11F NB022EY NB123EY NR001E NB113EY NB111EY NB121EY capacitor discharge ignition NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32

    9 BJE 42

    Abstract: LB1814M 13AJ 25 tlj nis7
    Text: ;±S:=I - KNo. N 5198 NO. 5198 • 63095 m i L B 1 8 1 4 M LB1814MI±. 3.6-f > ? i l t , / ' > v ? T < £•* 9 n - f t i i l l l S S X M v * m % T 4 M ' 7 > \ Z > h \ > * - 1 Y 7 4 '< * X 2 •* M > H JV* - *W.Wtm KB838 £ ftfc H v -i ^IC T -ifcS, iiffiM W IelKi, SBiSIH


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    PDF LD1014IVI LB1814MI VN/50k V/50kà 5VX21mA do/100 500nA, 9 BJE 42 LB1814M 13AJ 25 tlj nis7

    bb 9790 schematic diagram

    Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S
    Text: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one


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    PDF 32-bits. MG65C02, MG29C01, MG29C10, MG80C85, MG82Cxx, MGMC51 Q172SÖ AMI86 DD17SbD bb 9790 schematic diagram DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S

    DL05L

    Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
    Text: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are


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    PDF 2Kx32 16Kx32 256x16 R04cwxyz, R06cwxyz 4D55c DL05L lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


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    PDF AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    EN210

    Abstract: opja2 bb105 BF011 BF103 BF251 JKB10 TGB1000 BB015 EX310
    Text: TGB1000 Series 0.8-|im BiCMOS Gate Arrays ¿IAR 2 9 199] RELEASE 1.0, JANUARY 1901 Very high performance 0.8-Mm EPIC BiCMOS process -Core Logic 2<input NAND gate typically switches in 130 ps intrinsic and 320 ps loaded -Flip-flop toggle frequency greater


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    PDF TGB1000 TP000 TP008 TP009 TP010 IV110 EN210 opja2 bb105 BF011 BF103 BF251 JKB10 BB015 EX310