MT29F2G16AABWP-ET
Abstract: nand flash K9F2G08U0M at91sam9, nand flash, algorithm 6255B AT91SAM9 AT91SAM9260 AT91SAM9261 VOICE RECORDER ARM Source code 37MB
Text: NAND Flash Support in AT91SAM9 Microcontrollers 1. Scope The purpose of this application note is to introduce the NAND Flash technology and to describe how to interface NAND Flash memory to Atmel AT91SAM9 ARM® Thumb®based Microcontrollers that do not feature a NAND Flash Controller. The NAND Flash
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AT91SAM9
AT91SAM9
6255B
26-Jun-09
MT29F2G16AABWP-ET
nand flash
K9F2G08U0M
at91sam9, nand flash, algorithm
AT91SAM9260
AT91SAM9261
VOICE RECORDER ARM Source code
37MB
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NAND Flash AT91 ARM
Abstract: 0x00050005 6132 SRAM nand flash 64 MB AT91SAM MT29F2G16AABWP-ET AT91SAM9260 bad block NAND FLASH Controller Atmel smc sram
Text: NAND Flash Support in AT91SAM Microcontrollers 1. Scope The purpose of this application note is to introduce the NAND Flash technology and to describe how to interface NAND Flash memory to Atmel AT91SAM ARM® Thumb®based Microcontrollers that do not feature a NAND Flash Controller. The NAND Flash
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AT91SAM
AT91SAM
09-Oct-06
NAND Flash AT91 ARM
0x00050005
6132 SRAM
nand flash 64 MB
MT29F2G16AABWP-ET
AT91SAM9260
bad block
NAND FLASH Controller
Atmel smc sram
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Micron NAND flash controller
Abstract: Micron NAND "NAND Flash" NAND Flash DIE bad block MT29F4G08AAA NAND flash differences TN-29-28 nand flash TN-29-25
Text: TN-29-28: Memory Management in NAND Flash Arrays Overview Technical Note Memory Management in NAND Flash Arrays Overview NAND Flash devices have established a strong foothold in solid-state mass storage, as both a removable storage medium and an embedded storage medium. As NAND Flash
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TN-29-28:
09005aef82d7b436
09005aef82d7b441
tn2928
Micron NAND flash controller
Micron NAND
"NAND Flash"
NAND Flash DIE
bad block
MT29F4G08AAA
NAND flash differences
TN-29-28
nand flash
TN-29-25
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MT29C4G48MAZBBAKQ-48 IT
Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)
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168-Ball
MT29C4G48MAZBBAKQ-48
MT29C4G96MAZBBCJG-48
MT29C8G96MAZBBDJV-48
09005aef855512a5
168ball
MT29C4G48MAZBBAKQ-48 IT
MT29C8G96MAZBBDJV-48 IT
mt29c4g96
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MT29F2G08AAD
Abstract: MT29F2G08ABD MT29F2G16AAD MT29F2G08AB MT29F2G08ABD nand memory MT29F2G16ABD MT29F2G16AB 16GB Nand flash micron NAND FLASH INTERCONNECT Micron NAND
Text: TN-29-19: NAND Flash 101 Introduction Technical Note NAND Flash 101: An Introduction to NAND Flash and How to Design It In to Your Next Product Introduction This technical note discusses the basics of NAND Flash and demonstrates its power, density, and cost advantages for embedded systems. It covers data reliability and
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TN-29-19:
09005aef8245f460
09005aef8245f3bf
tn2919
MT29F2G08AAD
MT29F2G08ABD
MT29F2G16AAD
MT29F2G08AB
MT29F2G08ABD nand memory
MT29F2G16ABD
MT29F2G16AB
16GB Nand flash
micron NAND FLASH INTERCONNECT
Micron NAND
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MT29F2G08AAD
Abstract: No abstract text available
Text: Micron Confidential and Proprietary 2Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD Features Figure 1: • Open NAND Flash Interface ONFI 1.0-compliant • Single-level cell (SLC) technology
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MT29F2G08AAD,
MT29F2G16AAD,
MT29F2G08ABD,
MT29F2G16ABD
09005aef82784784
09005aef82784840
MT29F2G08AAD
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UDZV2.0B
Abstract: No abstract text available
Text: P400e 1.8-Inch NAND Flash SSD Features P400e 1.8-Inch SATA NAND Flash SSD MTFDDAA050MAR, MTFDDAA100MAR, MTFDDAA200MAR, MTFDDAA400MAR Features • Micron 25mm MLC NAND Flash • Capacity1 unformatted : 50GB, 100GB, 200GB, 400GB • RoHS-compliant package
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P400e
MTFDDAA050MAR,
MTFDDAA100MAR,
MTFDDAA200MAR,
MTFDDAA400MAR
100GB,
200GB,
400GB
512-byte
UDZV2.0B
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MTFDDAA100MAR
Abstract: No abstract text available
Text: P400e 1.8-Inch NAND Flash SSD Features P400e 1.8-Inch SATA NAND Flash SSD MTFDDAA050MAR, MTFDDAA100MAR, MTFDDAA200MAR, MTFDDAA400MAR Features • Micron 25nm MLC NAND Flash • Capacity1 unformatted : 50GB, 100GB, 200GB, 400GB • RoHS-compliant package
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P400e
MTFDDAA050MAR,
MTFDDAA100MAR,
MTFDDAA200MAR,
MTFDDAA400MAR
100GB,
200GB,
400GB
512-byte
MTFDDAA100MAR
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AN1822
Abstract: NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL
Text: AN1822 APPLICATION NOTE Wear Leveling in Single Level Cell NAND Flash Memories This Application Note describes the Wear Leveling algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION In ST NAND Flash memories each physical block can be programmed or erased reliably over 100,000
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AN1822
AN1822
NAND512W3A 64MB
"nand flash memory" fat32
Wear Leveling in Single Level Cell NAND Flash Memory
error free nand
NAND FLASH 64MB
Wear Leveling in Single Level Cell NAND Flash memories
leveling
FAT32
FLASH TRANSLATION LAYER FTL
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Untitled
Abstract: No abstract text available
Text: 54LS20,DM54LS20,DM74LS20 54LS20 DM54LS20 DM74LS20 Dual 4-Input NAND Gates Literature Number: SNOS291A 54LS20 DM54LS20 DM74LS20 Dual 4-Input NAND Gates General Description Features This device contains two independent gates each of which performs the logic NAND function
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54LS20
DM54LS20
DM74LS20
DM74LS20
SNOS291A
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Untitled
Abstract: No abstract text available
Text: 54F20,74F20 54F20 74F20 Dual 4-Input NAND Gate Literature Number: SNOS172A 54F 74F20 Dual 4-Input NAND Gate General Description This device contains two independent gates each of which performs the logic NAND function Commercial Package Number Military N14A
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54F20
74F20
74F20
SNOS172A
74F20PC
14-Lead
14-Lead
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Programming and booting from NAND flash on the EA3100
Abstract: XBee application notes XBee ea313x LPC-3100 EA3131 "NAND Flash" 8 port AN1090 XNOR GATE application EA3100
Text: AN10901 Programming and booting from NAND flash on the EA3100 Rev. 01 — 5 January 2010 Application note Document information Info Content Keywords LPC3100, LPC3131, LPC3152, NAND Flash Abstract Example for programming NAND flash on an EA3131 EA3152 board.
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AN10901
EA3100
LPC3100,
LPC3131,
LPC3152,
EA3131
EA3152)
AN10901
Programming and booting from NAND flash on the EA3100
XBee application notes
XBee
ea313x
LPC-3100
EA3131
"NAND Flash" 8 port
AN1090
XNOR GATE application
EA3100
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Untitled
Abstract: No abstract text available
Text: 54LS10,DM54LS10,DM74LS10 54LS10 DM54LS10 DM74LS10 Triple 3-Input NAND Gates Literature Number: SNOS277A 54LS10 DM54LS10 DM74LS10 Triple 3-Input NAND Gates General Description Features This device contains three independent gates each of which performs the logic NAND function
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54LS10
DM54LS10
DM74LS10
DM74LS10
SNOS277A
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DM74S20
Abstract: DM74S20N MS-001 N14A
Text: DM74S20 Dual 4-Input NAND Gate August 1986 Revised April 2000 DM74S20 Dual 4-Input NAND Gate General Description This device contains two independent gates each of which performs the logic NAND function. Ordering Code: Order Number DM74S20N Package Number
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DM74S20
DM74S20
DM74S20N
14-Lead
MS-001,
DS006449
DM74S20N
MS-001
N14A
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DM74S40
Abstract: DM74S40N MS-001 N14A
Text: DM74S40 Dual 4-Input NAND Buffer August 1986 Revised April 2000 DM74S40 Dual 4-Input NAND Buffer General Description This device contains two independent gates each of which performs the logic NAND function. Ordering Code: Order Number DM74S40N Package Number
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DM74S40
DM74S40
DM74S40N
14-Lead
MS-001,
DS006453
DM74S40N
MS-001
N14A
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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EDI784MSV-RP
EDI784MSV50SI
EDI784MSV-RP
ECOU8274
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K9HCG08U5M
Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs
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120GB
128MB
256MB
128MB
512MB
K9HCG08U5M
K9WBG08U1M
K9LAG08U0M-PCB0
KMAFN0000M
KMBGN0000A
K9MDG08U5M-PCB0
K4M56323PI
MCCOE32GQMPQ-M
K4M56163PI
movinand
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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EDI784MSV-RP
EDI784MSV
528-byte
I784M
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Untitled
Abstract: No abstract text available
Text: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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EDI784MSV-RP
250ms
minV50SI
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km29v040t
Abstract: yd 4145 km29v040 V040T
Text: KM29V040T Flash ELECTRONICS 512Kx8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array Its NAND cell structure provides the most cost-effective
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KM29V040T
512Kx8
500us
400mil/0
KM29V040T
512Kx8bit
KM29V040
yd 4145
V040T
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Untitled
Abstract: No abstract text available
Text: KM29N040T Flash ELECTRONICS 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program
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KM29N040T
512Kx8Bit
KM29N040T
32-byte
500us
120ns/byte.
KM29N040
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Untitled
Abstract: No abstract text available
Text: Advance Information KM29V64000TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000TS/RS is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its NAND
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KM29V64000TS/RS
KM29V64000TS/RS
528-byte
200ns
KM29V64000
7Sb4142
00E442b
-TSOP2-400F
-TSQP2-400R
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KM29N040T
Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective
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KM29N040T
512Kx8
500us
400mil/0
KM29N040T
512Kx8bit
KM29N040
KM29N040T)
7TL4142
741 IC data sheet
bhrb
data sheet IC 741
KM29N04
samsung flash bad block mapping
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array : 512K x8 Its NAND cell structure provides the most cost-effective
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KM29V040T
512Kx8Bit
KM29V040T
32-byte
500us
120ns/byte.
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