EDI784MSV Search Results

9CTI

Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Contextual Info: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

Contextual Info: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high

TA 7609

Contextual Info: EDI784MSV 4Megx8 NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features • Single 3.3 - Volt Supply • Separate Output Buffer power supply 3.3V or 5V • Organization Memory Cell array (4M+128K) bit x 8bit Data Register (512 +16) bit x 8 bit

Contextual Info: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

Contextual Info: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high

J200M

Contextual Info: ^EDI ED I784M SV ELECIRONCDE9GIS&NC 4Megx8NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

Contextual Info: M CIROM C OOCNS N G | INSIDE SECTION 4 . Density 1 Megabit 1 Megabit 4 Megabit« 4 Megabits 32 Megabits 64 Megabits Orgaalzation 82KX82 32KX32 128KX32 128KX32 4MX8 8Mx8 Part Ne. EDI5M8232C-GB EDI5C8232C-JM EDI5M82128C-GB EDI5C32128C-JM EDI784MSV-BM EDI788MSV-BM

Contextual Info: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high

Contextual Info: ^EDI EDI788MS V 8Megx8 NAND Flash ELECTRONIC DESIGNS, INC ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic {Features The EDI788MSV is a 8M 8,388,608 x8 bit NAND Flash • Single 3.3 - Volt Supply cell provides the most cost-effective solution for high density

Contextual Info: ^EDL EDI788MS V 8Megx8 NAND Flash ELECTRONIC DESIGNS, INC ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI788MSV is a 8M 8,388,608 x8 bit NAND Flash • Single 3.3 - Volt Supply cell provides the most cost-effective solution for high density

Contextual Info: ^EDI E D I788M S V 8Megx8 NAND Flash ElÉCTUONC DESICN& HC. ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic ¡Features • Single 3.3 - Volt Supply • Separate Output Buffer power supply 3.3V or 5V • Organization Memory Cell array (8M+256K) bit x 8bit Data Register

EDI784MSV50BB

Abstract: EDI784MSV50BC EDI784MSV50BI
Contextual Info: EDI788MSV 8Megx8 NAND Flash ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic Features • Single 3.3 - Volt Supply • Separate Output Buffer power supply 3.3V or 5V • Organization Memory Cell array (8M+256K) bit x 8bit Data Register (512 +16) bit x 8 bit