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    MZ0912B50Y Search Results

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    MZ0912B50Y Price and Stock

    Rochester Electronics LLC MZ0912B50Y

    RF POWER BIPOLAR TRANSISTOR, 1-E
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MZ0912B50Y Bulk 1
    • 1 $331.25
    • 10 $331.25
    • 100 $331.25
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    Ampleon MZ0912B50Y,114

    RF TRANS NPN 20V 1.215GHZ CDFM2
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    DigiKey MZ0912B50Y,114 Tray
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    Advanced Semiconductor Inc MZ0912B50Y

    RF Bipolar Transistors 960-1215MHz Gain 7dB NPN
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    Mouser Electronics MZ0912B50Y
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    Bristol Electronics MZ0912B50Y 7
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    Quest Components MZ0912B50Y 5
    • 1 $218.75
    • 10 $212.5
    • 100 $212.5
    • 1000 $212.5
    • 10000 $212.5
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    NXP Semiconductors MZ0912B50Y,114

    MZ0912B50Y - BiPolar Transistor
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    Rochester Electronics MZ0912B50Y,114 1 1
    • 1 $255.61
    • 10 $255.61
    • 100 $240.27
    • 1000 $217.27
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    Ampleon MZ0912B50Y

    MZ0912B50 - NPN Silicon RF Power Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MZ0912B50Y 156 1
    • 1 $318.51
    • 10 $318.51
    • 100 $299.4
    • 1000 $270.73
    • 10000 $270.73
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    MZ0912B50Y Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MZ0912B50Y Advanced Semiconductor Transistor Original PDF
    MZ0912B50Y Philips Semiconductors NPN Microwave Power Transistor Original PDF
    MZ0912B50Y Philips Semiconductors NPN Microwave Power Transistor Original PDF
    MZ0912B50Y Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MZ0912B50Y Philips Components Datasheet Library 1989 Scan PDF
    MZ0912B50Y Philips Semiconductors NPN microwave power transistor Scan PDF
    MZ0912B50Y,114 NXP Semiconductors NPN microwave power transistor - Application: Avionics - TACAN, JTIDS, DME ; Description: Avionics Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 45 %; Frequency: 960 - 1215 MHz; Load power: 60 W; Operating voltage: 50 VDC; Power gain: 8 dB; Pulse width: 10 us; Package: SOT443A (CDFM2); Container: Blister pack Original PDF
    MZ0912B50YTRAY Philips Semiconductors TRANS GP BJT NPN 20V 3A 3SOT443A BLISTER PACK TRAY Original PDF

    MZ0912B50Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MZ0912B50Y

    Abstract: No abstract text available
    Text: MZ0912B50Y NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MZ0912B50Y is Designed for General Purpose Class C Power Amplifier Applications up to 1215 MHz. PACKAGE STYLE .400 2L FLG L N FEATURES: J O A B • PG = 7.0 dB min.at 50 W / 1215 MHz • Common Base


    Original     		PDF MZ0912B50Y MZ0912B50Y

    MZ0912B50Y

    Abstract: MGL050
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides


    Original     		PDF MZ0912B50Y SCA53 127147/00/02/pp12 MZ0912B50Y MGL050

    transistor 359 AJ

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides


    Original     		PDF MZ0912B50Y SCA53 127147/00/02/pp12 transistor 359 AJ

    rf amplifier marking catalog

    Abstract: No abstract text available
    Text: Philips Semiconductors; MZ0912B50Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MZ0912B50Y; NPN microwave power transistor General Description Blockdiagram


    Original     		PDF MZ0912B50Y; MZ0912B50Y 01-Jul-98) rework/mz0912b50y rf amplifier marking catalog

    MZ0912B50Y

    Abstract: W1215
    Text: MZ0912B50Y NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MZ0912B50Y is Designed for General Purpose Class C Power Amplifier Applications up to 1215 MHz. PACKAGE STYLE .400 2L FLG FEATURES: • PG = 7.0 dB min.at 50 W / 1215 MHz • Common Base • Omnigold Metalization System


    Original     		PDF MZ0912B50Y MZ0912B50Y W1215

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


    Original     		PDF 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original     		PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470

    tda8510j 2.1 creative amplifiers

    Abstract: transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J
    Text: Semiconductors Choice. Performance. Flexibility. The Philips Portfolio 360º vision of multimedia Introduction to ��������������� � ������������� ������� ��������������


    Original     		PDF PNX1300 PNX1300, PNX1500 SAA6752 tda8510j 2.1 creative amplifiers transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J

    SD1446

    Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
    Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31


    Original     		PDF BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 SD1446 SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    2SC635

    Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
    Text: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original     		PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC635 MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051

    NPN Silicon Epitaxial Planar Transistor

    Abstract: MZ0912B50Y TACAN
    Text: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting


    OCR Scan     		PDF MZ0912B50Y NPN Silicon Epitaxial Planar Transistor MZ0912B50Y TACAN

    philips capacitor 470

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y FEATURES QUICK REFERENCE DATA • Interdigitated structure provides high emitter efficiency Microwave performance up to T mb = 25 °C in a common base class C broadband amplifier.


    OCR Scan     		PDF MZ0912B50Y 01KP50X philips capacitor 470

    Untitled

    Abstract: No abstract text available
    Text: Philips Components MZ0912B50Y u ia ^ n t i e s c m iw n u u u ioks D a ta s h e e t s ta tu s P re lim in a ry ep e d flca tfo n d a te o l le a v e J u ly 1 9 9 0 NPN silicon planar epitaxial m icrowave pow er transistor FEATURES APPLICATION d e s c r ip t io n


    OCR Scan     		PDF MZ0912B50Y

    MZ0912B50Y

    Abstract: SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y FEATURES QUICK REFERENCE DATA • Interdigitated structure provides high emitter efficiency broadband amplifier. • Diffused emitter ballasting resistors providing excellent current sharing


    OCR Scan     		PDF MZ0912B50Y OT443A OT443A. MZ0912B50Y SC15

    MX0912B250Y

    Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
    Text: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4


    OCR Scan     		PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W FO-91 RX1214B300Y MX0912B250Y RV2833B5X RV3135B5X RZ2731B16W MRB11175Y

    Philips Semiconductors Selection Guide

    Abstract: LTE42005S BLS2731-10
    Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR


    OCR Scan     		PDF RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    LFE15

    Abstract: LAE4001R BLS2731-50 BLS2731-10
    Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50


    OCR Scan     		PDF BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50


    OCR Scan     		PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W MRB11175Y MRB11350Y MSB11900Y

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc