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    MUR120 MAKE LIST Search Results

    MUR120 MAKE LIST Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    LMH6619QMAKE/NOPB Texas Instruments Automotive Dual 130 MHz, 1.25 mA RRIO Operational Amplifiers 8-SOIC -40 to 105 Visit Texas Instruments Buy

    MUR120 MAKE LIST Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FE16B

    Abstract: MBR0540LT1 FE16D BYV19-45 MUR420 replacement BYV33-45 FE16A BYV43-45 1N5821 substitution replacement UF5402
    Text: Rectifier Cross Reference This Cross Reference lists Rectifiers by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional information, contact the nearest ON Semiconductor


    Original     		r14525 CRD801/D FE16B MBR0540LT1 FE16D BYV19-45 MUR420 replacement BYV33-45 FE16A BYV43-45 1N5821 substitution replacement UF5402 PDF

    MUR160G

    Abstract: MUR140G MUR120RL
    Text: MUR120 Series SWITCHMODE Power Rectifiers MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160 The MUR120 series of SWITCHMODE power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • •


    Original     		MUR120 MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160 MUR120/D MUR160G MUR140G MUR120RL PDF

    MOTOROLA SEMICONDUCTOR mur120

    Abstract: U120 6 pin mur120 U120 MUR140 MUR160 U160
    Text: MOTOROLA Order this document by MUR120/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MUR120 MUR140 MUR160 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:


    Original     		MUR120/D MUR120 MUR140 MUR160 MOTOROLA SEMICONDUCTOR mur120 U120 6 pin mur120 U120 MUR140 MUR160 U160 PDF

    tp2350

    Abstract: J200 mosfet DK 51* transistor IRF950 TRIPATH TC2001 250w audio amplifier circuit diagram capacitor 4.7uF 100v crossover passive TRIPATH pin connection of j200 transistor TK2350
    Text: Tr i path Technol ogy, I nc. - Technical Information RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 1.5 June 2002 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier


    Original     		RB-TK2350-1 RB-TK2350-2 RB-TK2350 TK2350 RB-TK2350, RB-TK2350-1 /-21V /-39V tp2350 J200 mosfet DK 51* transistor IRF950 TRIPATH TC2001 250w audio amplifier circuit diagram capacitor 4.7uF 100v crossover passive TRIPATH pin connection of j200 transistor PDF

    TA3020

    Abstract: TRIPATH TA3020 EB-TA3020 ST C212 J200 mosfet a3020 TRIPATH TECHNOLOGY TA3020 capacitor 4.7uF 100v crossover passive speaker Bridged RB-TA3020 dk qg
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TA3020-1 RB-TA3020-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 3.0- March 2002 GENERAL DESCRIPTION The RB-TA3020 reference board is based on the TA3020 digital audio power


    Original     		RB-TA3020-1 RB-TA3020-2 RB-TA3020 TA3020 RB-TA3020, /-21V /-39V ERG-2SJ330 TRIPATH TA3020 EB-TA3020 ST C212 J200 mosfet a3020 TRIPATH TECHNOLOGY TA3020 capacitor 4.7uF 100v crossover passive speaker Bridged RB-TA3020 dk qg PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    TP2350B

    Abstract: J200 mosfet tp2350 TRIPATH TC2001 TK2350 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 2.2 November 2004 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier chipset from


    Original     		RB-TK2350-1 RB-TK2350-2 RB-TK2350 TK2350 RB-TK2350-1 /-21V /-39V /-35V TP2350B J200 mosfet tp2350 TRIPATH TC2001 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    mr852

    Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
    Text: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120LT3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mr852 DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534 PDF

    diode A14A surface mount

    Abstract: SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode
    Text: MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling


    Original     		MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD640CT MBRD660CT VHE205 VHE210 diode A14A surface mount SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode PDF

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100 PDF

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    TP2350B

    Abstract: mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TP2150B DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER Technical Information Revision 1.7 – June 2004 GENERAL DESCRIPTION The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS


    Original     		TP2150B TP2150B TP2350B mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY PDF

    3000 watts subwoofer circuit diagram

    Abstract: 5 channels 1000w audio amplifier circuit diagram 1000w subwoofer amplifier 1000W power amplifier schematic diagrams SCHEMATIC 1000w power amplifier stereo 1000w class d circuit diagram schematics 300w power amplifier circuit diagram 100 watt subwoofer circuit diagram 1000w power amplifier circuit diagram 1000w audio amplifier circuit diagram
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TA3020 STEREO 300W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP T M ) TECHNOLOGY Technical Information Revision 3.0 – September 2003 GENERAL DESCRIPTION The TA3020 is a two-channel, 300W (4Ω) per channel Amplifier Driver IC that uses Tripath’s proprietary Digital


    Original     		TA3020 TA3020 3000 watts subwoofer circuit diagram 5 channels 1000w audio amplifier circuit diagram 1000w subwoofer amplifier 1000W power amplifier schematic diagrams SCHEMATIC 1000w power amplifier stereo 1000w class d circuit diagram schematics 300w power amplifier circuit diagram 100 watt subwoofer circuit diagram 1000w power amplifier circuit diagram 1000w audio amplifier circuit diagram PDF

    SCHEMATIC 1000w power amplifier stereo

    Abstract: simple subwoofer 2.1 high pass filter schematic 3000 watts subwoofer circuit diagram 500 watt audio subwoofer high subwoofer 100 watts amplifier 5 channels 1000w audio amplifier circuit diagram 1000w audio amplifier circuit diagram 1000w subwoofer amplifier 300w audio amplifier circuit diagram 300w rms audio amplifier circuit diagram
    Text: Tr i path Technol ogy, I nc. - Techni c a l I nf or m a t i on TK2350 STEREO 300W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information Revision 1.2 –December 2002 GENERAL DESCRIPTION The TK2350 (TC2001/TP2350 chipset) is a two-channel, 300W (4Ω) per channel Amplifier


    Original     		TK2350 TC2001/TP2350 TK2150 TK2350, SCHEMATIC 1000w power amplifier stereo simple subwoofer 2.1 high pass filter schematic 3000 watts subwoofer circuit diagram 500 watt audio subwoofer high subwoofer 100 watts amplifier 5 channels 1000w audio amplifier circuit diagram 1000w audio amplifier circuit diagram 1000w subwoofer amplifier 300w audio amplifier circuit diagram 300w rms audio amplifier circuit diagram PDF