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onsemi MBR340 DIODE SCHOTTKY 40V 3A AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR340	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	MBR340		236			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MBR340		56			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SMC Diode Solutions MBR340S DIODE SCHOTTKY 40V 3A TO277B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR340S	Reel			80,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi MBR340G DIODE SCHOTTKY 40V 3A AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR340G	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	MBR340G	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi MBR340RL DIODE SCHOTTKY 40V 3A AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR340RL	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
ComSIT USA	MBR340RL		1,350			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC MBR340PRL RECTIFIER DIODE, SCHOTTKY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR340PRL	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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MBR340 Datasheets (26)

Part	Manufacturer	Description	Datasheet Type	PDF
MBR340	EIC Semiconductor	Schottky Barrier Rectifiers	Original	PDF
MBR340	International Rectifier	Schottky Rectifier	Original	PDF
MBR340	International Rectifier	Schottky Rectifier	Original	PDF
MBR340	Micro-Electro-Magnetical Tech	40 V, Schottky die	Original	PDF
MBR340	On Semiconductor	Axial Lead Rectifier	Original	PDF
MBR340	Microsemi	Schottky Rectifier	Scan	PDF
MBR340	Motorola	Switchmode Datasheet	Scan	PDF
MBR340	Motorola	European Master Selection Guide 1986	Scan	PDF
MBR340	Motorola	Axial Lead Rectifiers	Scan	PDF
MBR340	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
MBR340	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Schottky Rectifier, 40V, 3A, Pkg Style Case 267-03	Scan	PDF
MBR340_AY_00001	Panjit International	DIODE SCHOTTKY 40V 3A DO201AD	Original	PDF
MBR340-D	On Semiconductor	Axial Lead Rectifier	Original	PDF
MBR340G	On Semiconductor	3A 40V Schottky Rectifier	Original	PDF

MBR340M	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF
MBR340M	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF
MBR340P	On Semiconductor	MBR340 - DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 267-03, 2 PIN, Rectifier Diode	Original	PDF
MBR340P	Motorola	Schottky Barrier Rectifier	Scan	PDF
MBR340P	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
MBR340PRL	On Semiconductor	MBR340 - DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 267-03, 2 PIN, Rectifier Diode	Original	PDF

MBR340 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MBR340 Abstract: 200Reverse Text: Bulletin PD-20593 rev. B 03/03 MBR340 SCHOTTKY RECTIFIER 3.0 Amp Description/ Features Major Ratings and Characteristics Characteristics MBR340 Units IF AV Rectangular 3.0 A 30/40 V IFSM @ tp = 5 µs sine 430 A VF 0.6 V - 40 to 150 °C waveform VRRM @ 3 Apk, TJ = 25°C	Original	PDF	PD-20593 MBR340 MBR340 200Reverse
MBR320 Abstract: mbr340 MBR330 Text: MBR320 ~ MBR340 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free	Original	PDF	MBR320 MBR340 DO-201AD DO-201AD UL94V-O MIL-STD-202, MBR320 mbr340 MBR330
Untitled Abstract: No abstract text available Text: MBR340P Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)95Ô V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80¥ V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)9.4	Original	PDF	MBR340P Voltage40 Voltage950m Current20m
Untitled Abstract: No abstract text available Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,	Original	PDF	MBR340
MOTOROLA B360 Abstract: MBR340 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350 Text: MOTOROLA Order this document by MBR320/D SEMICONDUCTOR TECHNICAL DATA MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with	Original	PDF	MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 MBR360 MOTOROLA B360 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350
MBR340 Abstract: B340 MBR340RL Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,	Original	PDF	MBR340 MBR340/D MBR340 B340 MBR340RL
MBR340 Abstract: MBR340G MBR340RL MBR340RLG Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	PDF	MBR340 MBR340/D MBR340 MBR340G MBR340RL MBR340RLG
Untitled Abstract: No abstract text available Text: MBR340 SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts 3.0 Amperes CURRENT FEATURES 0.052 1.3 0.048(1.2) 1.0(25.4)MIN. • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop	Original	PDF	MBR340 2002/95/EC DO-201AD MIL-STD-750 2010-REV
MBR340 Abstract: MBR340G MBR340RL MBR340RLG Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	PDF	MBR340 MBR340 MBR340G MBR340RL MBR340RLG
MBR340 Abstract: No abstract text available Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR340 Single Anode General Description: 40 V 3 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current	Original	PDF	MBR340 14mil) MBR340
Untitled Abstract: No abstract text available Text: VS-MBR340, VS-MBR340-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical	Original	PDF	VS-MBR340, VS-MBR340-M3 2002/95/EC DO-201AD VS-MBR340. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	PDF	MBR340
Untitled Abstract: No abstract text available Text: MBR 340 SCHOTTKY DIE SPECIFICATION TYPE: MBR340 RSingle □Dual Anode General Description: 40 V 3 A (Low Ir) SYM ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) IFAV Average Rectified Forward Current Maximum Instantaneous Forward Voltage	Original	PDF	MBR340 25mil)
MBR340 Abstract: No abstract text available Text: MBR340 SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts 3.0 Amperes CURRENT FEATURES 0.052 1.3 0.048(1.2) 1.0(25.4)MIN. • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop	Original	PDF	MBR340 2002/95/EC DO-201AD MIL-STD-750 50mVp-p 2010-REV

rectifier diode 3A Abstract: No abstract text available Text: MBR340 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline Cathode Anode • Very low forward voltage drop RoHS • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance	Original	PDF	MBR340 MBR340 12-Mar-07 rectifier diode 3A
Untitled Abstract: No abstract text available Text: Bulletin PD-20593 rev. C 12/04 MBR340 SCHOTTKY RECTIFIER 3.0 Amp Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular 3.0 A 30/40 V IFSM @ tp = 5 µs sine 430 A VF 0.6 V - 40 to 150 °C waveform VRRM @ 3 Apk, TJ = 25°C	Original	PDF	PD-20593 MBR340 MBR340 12-Mar-07
MBR340 Abstract: B340 MBR340RL Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,	Original	PDF	MBR340 r14525 MBR340/D MBR340 B340 MBR340RL
MBR340 Abstract: C-16 Text: MBR340 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance	Original	PDF	MBR340 MBR340 18-Jul-08 C-16
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with	OCR Scan	PDF	MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 MBR360 b3b72Â MBR320
MBR340M Abstract: MBR320M MBR330M 0450B Text: MBR320M MBR330M MBR340M SCHOTTKY BARRIER R EC TIFIERS HOT CARR IE R POWER R EC TIFIERS 3 AMPERE 20, 30, 4 0 V O LTS . . . e m p lo y in g the S c h o ttk y B arrier p rin c ip le in a large area m etal-to -s ilic o n p o w er d io d e. S ta te o f th e a rt g eo m etry features e p ita x ia l c o n stru ctio n w ith o x id e passiva	OCR Scan	PDF	MBR320M MBR330M MBR340M MBR340M 0450B
1N5B22 Abstract: lm 5821 IN5822 Text: 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P M M O T O R O L A I) ij s iy ; n ( * r ^ D a t a S h e p i S C H O T T K Y B A R R IE R A X I A L LE A D R E C T IF IE R S . . e m p lo yin g power diode. oxid e in The S c h o t t k y B arrier S tate-of-the-art	OCR Scan	PDF	1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P 1N5B22 lm 5821 IN5822
MBR360 Abstract: MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340 Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices A xial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal	OCR Scan	PDF	MBR320, MBR330, MBR340, MBR350, MBR360 MBR360 MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MBR340/D SEMICONDUCTOR TECHNICAL DATA A xial Lead R ectifier MBR340 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with	OCR Scan	PDF	MBR340/D MBR340
MBR360 Abstract: motorola b330 Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M BR340 and MBR360 are M otorola Preferred Devices A xial Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal	OCR Scan	PDF	MBR320 MBR340 MBR330 MBR350 MBR360 BR340 MBR360 motorola b330

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MBR340 Datasheets (26)

MBR340 Datasheets Context Search

MBR340

MBR320

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MOTOROLA B360

MBR340

MBR340

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MBR340

MBR340

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MBR340

rectifier diode 3A

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MBR340

MBR340

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MBR340M

1N5B22

MBR360

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MBR360