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onsemi FQD13N10LTM MOSFET N-CH 100V 10A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQD13N10LTM	Digi-Reel	6,950		1	1 $0.92 10 $0.599 100 $0.92 1000 $0.31064 10000 $0.31064	Buy Now
	FQD13N10LTM	Cut Tape	6,950		1	1 $0.92 10 $0.599 100 $0.92 1000 $0.31064 10000 $0.31064	Buy Now
	FQD13N10LTM	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.26418	Buy Now
Avnet Americas	FQD13N10LTM	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.22437	Buy Now
	FQD13N10LTM	Reel		6 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.22437	Buy Now
Mouser Electronics	FQD13N10LTM		251,342			1 $1.01 10 $0.646 100 $0.432 1000 $0.306 10000 $0.241	Buy Now
Newark	FQD13N10LTM	Cut Tape	9,326		1	1 $0.989 10 $0.7 100 $0.519 1000 $0.409 10000 $0.409	Buy Now
	FQD13N10LTM	Reel			2,500	1 $0.321 10 $0.321 100 $0.321 1000 $0.321 10000 $0.289	Buy Now
TME	FQD13N10LTM				1	1 $0.73 10 $0.488 100 $0.337 1000 $0.273 10000 $0.273	Get Quote

Richardson RFPD	FQD13N10LTM				5,000	1 - 10 - 100 - 1000 - 10000 $0.23	Buy Now
Avnet Asia	FQD13N10LTM			6 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.24182	Buy Now
Avnet Silica	FQD13N10LTM			7 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	FQD13N10LTM	Cut Tape	1,955			1 - 10 $0.351 100 $0.242 1000 $0.235 10000 $0.235	Buy Now
EBV Elektronik	FQD13N10LTM			7 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	FQD13N10LTM		5,000			1 - 10 - 100 - 1000 - 10000 $0.2263	Buy Now
New Advantage Corporation	FQD13N10LTM		27,500		1	1 - 10 - 100 - 1000 - 10000 $0.3286	Buy Now
onsemi FQD13N10TM MOSFET N-CH 100V 10A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQD13N10TM	Digi-Reel	5,307		1	1 $1.29 10 $0.814 100 $1.29 1000 $0.38163 10000 $0.38163	Buy Now
	FQD13N10TM	Cut Tape	5,307		1	1 $1.29 10 $0.814 100 $1.29 1000 $0.38163 10000 $0.38163	Buy Now
	FQD13N10TM	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.31314	Buy Now
Avnet Americas	FQD13N10TM	Reel		7 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.285	Buy Now
Mouser Electronics	FQD13N10TM		8,808			1 $0.68 10 $0.531 100 $0.444 1000 $0.348 10000 $0.299	Buy Now
Newark	FQD13N10TM	Reel			2,500	1 $0.412 10 $0.412 100 $0.412 1000 $0.412 10000 $0.371	Buy Now
Bristol Electronics	FQD13N10TM		3,561			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Richardson RFPD	FQD13N10TM				2,500	1 - 10 - 100 - 1000 - 10000 $0.3	Buy Now
Avnet Asia	FQD13N10TM			7 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.31091	Buy Now
Avnet Silica	FQD13N10TM			8 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FQD13N10TM			8 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FQD13N10TM		120,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG ISZ113N10NM5LF2ATMA1 ISZ113N10NM5LF2ATMA1 MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISZ113N10NM5LF2ATMA1	Digi-Reel	4,960		1	1 $2.62 10 $1.722 100 $2.62 1000 $0.85857 10000 $0.81789	Buy Now
	ISZ113N10NM5LF2ATMA1	Cut Tape	4,960		1	1 $2.62 10 $1.722 100 $2.62 1000 $0.85857 10000 $0.81789	Buy Now
Avnet Americas	ISZ113N10NM5LF2ATMA1	Reel	5,000	18 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.7865	Buy Now
Mouser Electronics	ISZ113N10NM5LF2ATMA1		3,845			1 $2.57 10 $1.71 100 $1.19 1000 $0.818 10000 $0.812	Buy Now
Newark	ISZ113N10NM5LF2ATMA1	Cut Tape	4,765		1	1 $2.59 10 $1.76 100 $1.27 1000 $0.873 10000 $0.873	Buy Now
EBV Elektronik	ISZ113N10NM5LF2ATMA1			19 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
UMW FQD13N10LTM MOSFET N-CH 100V 10A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQD13N10LTM	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.32686	Buy Now
	FQD13N10LTM	Cut Tape	2,500		1	1 $0.98 10 $0.659 100 $0.98 1000 $0.33362 10000 $0.33362	Buy Now
	FQD13N10LTM	Digi-Reel	2,500		1	1 $0.98 10 $0.659 100 $0.98 1000 $0.33362 10000 $0.33362	Buy Now
onsemi NTB13N10G MOSFET N-CH 100V 13A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTB13N10G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	NTB13N10G		100		1	1 $0.2275 10 $0.2275 100 $0.2139 1000 $0.1934 10000 $0.1934	Buy Now

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13N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
13N100 Abstract: 10N100 13n10 Text: HiPerFETTM Power MOSFETs VDSS IXFH / IXFM 10N100 IXFH / IXFM 12N100 IXFH 13N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM	Original	10N100 12N100 13N100 13N100 10N100 13n10	PDF
10N100 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT 10 N100 IXFT12 N100 IXFT 13 N100 ID25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns RDS on 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol Test Conditions	Original	IXFT12 10N100 12N100 13N100	PDF
10N100 Abstract: No abstract text available Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C	Original	10N100 12N100 728B1 123B1 728B1 065B1 10N100	PDF
Untitled Abstract: No abstract text available Text: 13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features http://onsemi.com • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature	Original	NTB13N10 NTB13N10/D	PDF
3000 watts subwoofer circuit diagram Abstract: 200w subwoofer circuit 12v 60W subwoofer CIRCUIT DIAGRAM IRF530N h bridge stereo amplifier 400W 400W low pass subwoofer circuit diagram 100 watt subwoofer circuit diagram subwoofer audio amplifier circuit diagram 500 watt audio subwoofer "subwoofer amplifiers" Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2150 STEREO 200W 6Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information - Preliminary Revision 1.0 – December 2002 GENERAL DESCRIPTION	Original	TK2150 TC2001/TP2150 3000 watts subwoofer circuit diagram 200w subwoofer circuit 12v 60W subwoofer CIRCUIT DIAGRAM IRF530N h bridge stereo amplifier 400W 400W low pass subwoofer circuit diagram 100 watt subwoofer circuit diagram subwoofer audio amplifier circuit diagram 500 watt audio subwoofer "subwoofer amplifiers"	PDF
13n10 Abstract: 13N10 mosfet NTP13N10 Text: 13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature	Original	NTP13N10 O-220 tpv10 13n10 13N10 mosfet NTP13N10	PDF
TP2350B Abstract: mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TP2150B DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER Technical Information Revision 1.7 – June 2004 GENERAL DESCRIPTION The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS	Original	TP2150B TP2150B TP2350B mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY	PDF
13n10 Abstract: NTP13N10 13N10 mosfet AN569 NTP13N10G Text: 13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature	Original	NTP13N10 O-220 NTP13N10/D 13n10 NTP13N10 13N10 mosfet AN569 NTP13N10G	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM	Original	O-247	PDF
RCS01 Abstract: 13n10l Text: IS31LT3948 PFM Mode Boost LED Driver With the External NMOS December 2012 General Description Features The IS31LT3948 is a PFM step-up DC-DC converter designed for driving the white LED arrays for large size LCD panel backlighting applications. It can deliver stable constant output current from a few	Original	IS31LT3948 IS31LT3948 RCS01 13n10l	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
12n100 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM	Original	10N100 12N100 13N100 13N100 O-247	PDF

13n10l Abstract: SN3948 13n10 RCS01 SS310 DIODE schottky IS31LT3948 IS31LT3948-GRLS2-TR Text: IS31LT3948 PFM MODE BOOST LED DRIVER WITH THE EXTERNAL NMOS OCTOBER 2011 GENERAL DESCRIPTION FEATURES The IS31LT3948 is a PFM step-up DC-DC converter designed for driving the white LED arrays for large size LCD panel backlighting applications. It can deliver stable constant output current from a few	Original	IS31LT3948 IS31LT3948 27BSC 13n10l SN3948 13n10 RCS01 SS310 DIODE schottky IS31LT3948-GRLS2-TR	PDF
13n10 Abstract: 10N100 N100 13N100 Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C	Original	10N100 12N100 O-247 O-204 728B1 123B1 13n10 10N100 N100 13N100	PDF
13N10L Abstract: No abstract text available Text: IS31LT3948 PFM MODE BOOST LED DRIVER WITH THE EXTERNAL NMOS May 2014 GENERAL DESCRIPTION FEATURES The IS31LT3948 is a PFM step-up DC-DC converter designed for driving the white LED arrays for large size LCD panel backlighting applications. It can deliver stable constant output current from a few	Original	IS31LT3948 IS31LT3948 13N10L	PDF
13N10 Abstract: NTP13N10 13N10 mosfet AN569 NTP13N10G Text: 13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature	Original	NTP13N10 O-220 NTP13N10/D 13N10 NTP13N10 13N10 mosfet AN569 NTP13N10G	PDF
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60	PDF
Untitled Abstract: No abstract text available Text: □ IXYS HIPerFET vv DSS Power MOSFETs N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 10 A 1.20 Q 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Sym bol T est Conditions	OCR Scan	IXFT10N100 IXFT12N100 13N100 10N100 12N100	PDF
IXYS DS 145 Abstract: 13N100 Text: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS	OCR Scan	IXFT10N100 IXFT12N100 13N100 10N100 12N100 13N100 IXYS DS 145	PDF
Untitled Abstract: No abstract text available Text: IXYS HiPerFET Power MOSFETs ^D25 IX F H / IX F M 10 N 1 0 0 1000 V 10 A 1 .2 0 Q IX F H / I X F M 12 N 1 0 0 1000 V 12 A 1 .0 5 Q IX F H 1 3 N 1 0 0 1000 V 1 2 .5 A 0 .9 0 Q N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions	OCR Scan	to150 10N100 12N100 13N100 13N100	PDF
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60	PDF
Untitled Abstract: No abstract text available Text: HiPerFET Power MOSFETs V DSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Voss V«, Tj = 25°C to 150°C Vos VGSM Continuous T ransient IXFH/IXFM10N100 IXFH/IXFM12 N100 13N100 00 Maximum Ratings Tj = 25°C to 150°C; RGS= 1 M ii	OCR Scan	IXFH/IXFM10N100 IXFH/IXFM12 IXFH13N100 10N100 12N100 13N100	PDF

13N10 Search Results

13N10 Price and Stock

onsemi FQD13N10LTM

onsemi FQD13N10TM

Infineon Technologies AG ISZ113N10NM5LF2ATMA1

UMW FQD13N10LTM

onsemi NTB13N10G

13N10 Datasheets Context Search

13N100

10N100

10N100

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3000 watts subwoofer circuit diagram

13n10

TP2350B

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C1162

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RCS01

sd 20n60

7n60b

12n100

13n10l

13n10

13N10L

13N10

C1146

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IXYS DS 145

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ixys ixfn 55n50

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