MT8C Search Results

Contextual Info: M IC R O N MT8C8024 DRAM MODULE 1MEG x 8 DRAM FAST PAGE MODE PIN ASSIGNMENT (Top View OPTIONS Vcc CÄ5 DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 A9 NC DQ6 W Vss DQ7 NC DQ8 NC raS NC NC Vcc MARKING • Tim ing 80ns access 100ns access 120ns access

Contextual Info: M IC R O N MT8C8025 DRAM MODULE 1MEG x 8 DRAM NIBBLE MODE FEATURES MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30-pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8025 is a randomly accessed solid-state

Contextual Info: M IC R O N MT8C9025 1MEG x 9 DRAM DRAM MODULE NIBBLE MODE FEATURES PIN ASSIGNMENT Top View • In d u stry sta n d ard p in-out in a 30-pin single-in-line package • H igh perform ance CM OS silicon gate process • Single 5V±10% p o w er su p p ly • All inputs, o u tp u ts a n d clocks are fully TTL a n d

6H6 tube

Abstract: 6h6gt tube 6h6 6H6 diode 6h6gt tube electronic tube Tung Sol Lamp Works newark 13-2L 6h6g
Contextual Info: 6H6, 6H6GT/G TUNG-SOL m m di o d e J4 „ r MAX. MT8C Ü UN IPOTENTIAL CATHODE 6.3 VOLTS i 5 0.3 AMPERE '*1 AC OR DC 1I 8 _ 2 f M AX iiJÜF n1 HEATER MAX. _ 1 _ T-9 3 « MAX. C L A S S B U LB I R T E R H C O I ATE 7 F I R OC T AL M S E M T A l SHELL 7 P I N O C 1 H B AS E

Contextual Info: M IC R O N MT8C36256 DRAM MODULE 256K X 36 DRAM FEATURES OPTIONS DRAM MODULE PIN ASSIGNMENT (Top View • Industry standard pin-out in a 72-pin single-in-line package • High performance CMOS silicon gate process. • Single 5V±10% power supply • All inputs, outputs and clocks are fully TTL and

MT8C

Contextual Info: M I CR ON T E C H N O L O G Y INC L muii.c i biiiSMT 0002335 3 ñE D ni»B¡wywn^B^ . w t IMRN r r ~ y ¿ -2 3 -/7 1»I ' n i i - fi ; K ' -i «ü iS n U - ififi i J i a i • tr iù tfr m u lti.M ' REPLACES: MT8C9256 and MT8C9257 256K X 9 DRAM DRAM MODULE

30-pin SIMM

Abstract: 256k 30-pin SIMM
Contextual Info: I^ IIC R O N MT8C9256 256K X 9 DRAM DRAM MODULE REFRESH: 512 CYCLE/8MS FEATURES PIN ASSIGNMENT Top View • Industry standard pin-out in a 30-pin single-in-line memory module • Single 5V±10% power supply • All inputs, outputs and clocks are fully TTL

30-pin simm memory

Contextual Info: [M IC R O N MT8C8026 1MEG x 8 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8026 is a randomly accessed solid-state

Contextual Info: MICRON MT8C9024 DRAM MODULE 1MEG x 9 DRAM LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 30-pin single-in-line package • High performance CMOS silicon gate process • Single 5V±10% power supply • All inputs, outputs and clocks are fully T I L and

MT8C36512

Contextual Info: MICRON MT8C36512 DRAM MODULE 512K x 36 DRAM PIN ASSIGNMENT Top View OPTIONS 72 PIN SIMM (MO) o MARKING • Timing 80ns access 100ns access 120ns access • - 8 -10 -12 • Lead dress Tin/L ead Gold (SIMM only) None G • Packages: Leadless 72 -pin SIMM Leaded 72-pin ZIP

Contextual Info: M IC R O N MT8C8256 256K X DRAM MODULE DRAM REFRESH: 512 CYCLE/8MS PIN ASSIGNMENT Top View 30 PIN SIMM (MM) Vcc CSS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 W Vss DQ7 PRB DQ8 NC RAS NC NC Vcc MARKING • Tim ing 80ns access 100ns access

MT8C

Contextual Info: M IC R O N MT8C9026 1MEG x 9 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT (Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C9026 is a randomly accessed solid-state

30 pin SIP dram memory

Contextual Info: MICRON MT8C8024 DRAM MODULE 1MEG x 8 DRAM LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 30-pin single-in-line package • High performance CMOS silicon gate process • Single 5V±10% power supply • All inputs, outputs and clocks are fully TTL and

30 pin SIP dram memory

Contextual Info: I^IIC R O N MT8C9024 1MEG x 9 DRAM DRAM MODULE FAST PAGE MODE PIN ASSIGNMENT Top View • Industry standard pin-out in a 30-pin single-in-line package • High performance CMOS silicon gate process • Single 5V±10% power supply • All inputs, outputs and clocks are fully TJ'L and

Contextual Info: ADVANCE M IC R O N I 4 MEG DRAM MODULE X 32, 8 MEG X MT8D432 16 DRAM M OD ULE 4 MEG X 32, 8 MEG X 16 FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process • Single 5V ±10% power supply

MAB-T15-D-240-10

Abstract: MAB-T15-D-120-10 MAB-T09-S-240-05 Aluminum Base LED PCB 12v bulb 220 supply diagram power supply LED 5w MAB-T09-S-012-05 MAB-T15-D-024-10 MAB-T09-S-024-05 100-220VAC
Contextual Info: MT4B/5B/8B Ø45mm / Ø56mm / Ø86mm Steady TOWER LIGHTS Incandescent or LED • • • • • • Order Information MT 4 Optional Orders B 5 A L – RYGBC      4 5 8  Lens Diameter  B Light Style 1 2 3 4 5  Number of Stacks  Power Supply

a12t

Abstract: A13T
Contextual Info: j MICRO N T E C H N O L O G Y INC SSE » • b l l l S M T G G 0 S b l 3 2b0 ■ URN MT5C6405 883C 16K X 4 SRAM I^ IIC R O N MILITARY SRAM 16K x 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859 • MHrSTD-883, Class B

T2D 53

Abstract: T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31
Contextual Info: 7 ADVANCE M T2D T 132 B, M T4D232 B, M T8D432 B 2, 4 MEG X 32 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 1, 2, 4 MEG X 32 4 , 8 16 MEpABYT£, 5V, BURST EDO V FEATURES • 72-pin, single-in-line m emory module (SIMM) • Burst EDO order, interleave or linear, programmed by

Contextual Info: M I CR ON T E C H N O L O G Y INC 3 flE D G 0 0 2 3 QS 1 B M R N .-ftt'ir REPLACES: WT9C$G24 1 MEG X 8 DRAM FAST PAGE M O D E FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon gate process

nec 424256

Abstract: nec 424100 511000 424256 424256 nec KM41C1000 NEC 421000 m5m44c256 S4C1024 514256
Contextual Info: SIEM EN S Cross reference Memory Components 1 Mx1 256 K SIE M E N S HYB 511000 HYB 514256 HYB 514100 TO SHIBA TC 511000 TC 514256 TC 514100 HITACHI HM 511000 HM 514256 HM 514100 NEC jiP D 421000 XPD 424256 (XPD 424100 M ITSUBISHI M5M4C1000 M5M44C256 M5M514000

U18 524

Contextual Info: MICRON TECHNOLOGY INC 14E D • tlllSMT DOOIOMI T ■ T -V ¿ -¿ 3 - / 7 512K X 36 DRAM DRAM MODULE FEATURES 72 PIN SIMM MO MODULE OPTIONS DRAM PIN ASSIGNMENT (Top View) • Industry standard pin-out in a 72-pin single-in-line package • High performance CMOS silicon gate process.

Contextual Info: ADVANCE MT8LD132 X S , MT16LD232X(S) 1 MEG, Z MEG X 32 DRAM MODULE 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • New proposed JED EC-standard pinout in a 72-pin single-in-line package • High-performance CM O S silicon-gate process

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

MT8C1008

Contextual Info: MICRON TECHNOLOGY INC SSE D • L. 1 1 1 5 H I 000341=4 dfib « U R N V-'llCROfNJ 128K MT5C1008 X 8 SRAM 'T'-M w-'L's-m- SRAM 128K X 8 SRAM FEATURES • High speed: 12*, 15*, 17,20,25,35 and 45ns