MSM5110OOA Search Results

Contextual Info: OKI semiconductor MSC2355-xxYS12 1.048.576 Word x 36 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2355-xxYS12 is a 1,048,576 word by 36 bit dynamic Random Access Memory RAM Module which is comprised of eight pieces of the MSM514400 and four pieces of the MSM5110OOA

MSM511000A-8A

Abstract: tos 40101 MSM511000 msm511000a DIN 46231
Contextual Info: i4bE D • b?eHE4ü O K I OKI OOOTSOM I b ô «O K IJ SEMI CONDUCTOR 6R0UP semiconductor MSM511000A r - V i '2 3 1,048,576-W ORD x 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511000A is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The tech­

Contextual Info: O K I semiconductor MSM 511000A 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511000A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM 511000A is OKI's CMOS silicon gate process technology.

30-pin 9-bit ram module

Contextual Info: OKI semiconductor MSC2359-xxYS3 1.048.576 Word x 9 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2359-xxYS3 is a fully decoded, 1,048,576 word by 9 bit CMOS dynamic random access memory composed of two 4Mb DRAMs in SOJ MSM514400JS and one 1Mb DRAM in SOJ

511000A

Abstract: M511000A
Contextual Info: O K I semiconductor MSM511000A_ 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION T he M S M 5 1 1000A is a new generation dynam ic RAM organized as 1,048,576 w o rds x 1 bit. The tech nolog y used to fabricate the M S M 5 1 1000A is O K I's C M O S silicon gate process technology.