MSM514400 Search Results

Contextual Info: OKI semiconductor_ MSC2357-XXYS8 1,048,576 Word x 32 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE ^ GENERAL DESCRIPTION The Oki MSC2357-xxYS8 is a fully decoded, 1,048,576 word by 32 bit CMOS dynamic random access memory composed of eight 4Mb DRAMs in SOJ MSM514400JS . The mounting of eight

MSM514400C/CL-60

Contextual Info: O K I Semiconductor MSM514400C/CL_ 1,048,576-W ord x 4-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is

Contextual Info: FEDD514400D-01 Issue Date: Mar. 8, 2011 MSM514400D 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400D is a 1,048,576-word  4-bit dynamic RAM fabricated in OKI semiconductor’s silicon-gate CMOS technology. The MSM514400D achieves high integration, high-speed operation, and low-power

Contextual Info: FEDD514400D-01 Issue Date: Mar. 8, 2011 MSM514400D 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400D is a 1,048,576-word  4-bit dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The MSM514400D achieves high integration, high-speed operation, and

Contextual Info: O K I Semiconductor MSC23108B/BL-XXDS2 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC23108B/BL-xxDS2 is a fully decoded 1,048,576-word x 8-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs in SOJ MSM514400B/BL packages mounted

Contextual Info: O K I Semiconductor MSM5 14400A/AL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400A/AL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.

TT 104 N 14 KOF

Abstract: SC2313
Contextual Info: O K I Semiconductor MSC23136B/BL-xxBS12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23136B/BL-xxBS12/DS12 is a fully decoded 1,048,576-word x 36-bit CMOS Dynamic Ran­ dom Access Memory M odule composed of eight 4-Mb DRAMs in SOJ MSM514400B/BL packages and

m514400c

Abstract: 514400C
Contextual Info: O K I Semiconductor MSM514400C/CL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is

MSM514400D

Abstract: MSM514400 MSM514400DL
Contextual Info: E2G0023-17-41 ¡ Semiconductor MSM514400D/DL ¡ Semiconductor This version: Jan. 1998 MSM514400D/DL Previous version: May 1997 1,048,576-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400D/DL is a 1,048,576-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate

Contextual Info: MSM514400ASJ-70 IL22D C-MOS 4 M 1,048,576 x 4 -BIT DRAM —TOP VIEW— 5 DQ1 I/O 1 GND 26 18 17 DQ2 I/O 2 25 DQ4 I/O 16 15 WE IN 3 24 DQ3 I/O 14 12 RAS IN 4 23 CAS IN 11 10 22 OE IN A9 IN 5 9 3 22 A0 IN 9 4 18 A8 IN 23 A1 IN 10 17 A7 IN A2 IN 11 16 A6 IN

Contextual Info: FEDD514400E-03 Issue Date: Feb. 27, 2012 MSM514400E 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400E is a 1,048,576-word  4-bit dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The MSM514400E achieves high integration, high-speed operation, and low-power

Contextual Info: PJDD514400EL-01 作成 電子デバイス 1 ：2001 年 1 月 MSM514400E/EL 暫定 1,048,576-Word x 4-Bit DYNAMIC RAM : 高速ページモード • 概要 MSM514400E/EL はCMOS プロセス技術を用いた 1,048,576 ワードx4 ビット構成のダイナミック

Contextual Info: O K I Semiconductor MSC23109B/BL-XXDS3 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23109B/BL-xxDS3 is a fully decoded 1,048,576 word x 9-bit CMOS Dynamic Random Access Memory Module. It is composed of two 4-Mb DRAMs in SOJ MSM514400B/BL packages and one 1-Mb

Contextual Info: O K I Semiconductor MSC 23S 136B/BL-XXBS 12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23S136B/BL-xxBS12/DS12 is a fully decoded 1,048,576-word x 36-bit CMOS dynamic Ran­ dom Access Memory module composed of eight 4-Mb DRAMs in SOJ MSM514400B/BL packages and

ZIP20-P-400-1

Contextual Info: J2G0023-17-41 作成：1998年 1月 MSM514400D/DL ● 前回作成：1997年 5月 ¡ 電子デバイス MSM514400D/DL 1,048,576-Wordx4-Bit DYNAMIC RAM：高速ページモード • 概要 MSM514400D/DLはCMOSプロセス技術を用いた1,048,576ワード×4ビット構成のダイナミックラン

EJ350

Contextual Info: O K I semiconductor MSM514400A/AL_ 1,048,576-Word x 4-Bit DYNAM IC RAM: FA ST PAG E MODE T Y P E GENERAL DESCRIPTION The M SM 514400A/A L is a new g en e ra tio n dynam ic RAM o rg a n ize d as 1,048,576-word x 4-bit. Th e te c h n o lo g y used to fa b ric a te th e M SM 5 1 4 4 0 0 A /A L is O K I's CM O S s ilico n g a te process

MSM514400

Abstract: ZIP20
Contextual Info: J2G0023-17-41 作成：1998年 1月 MSM514400D/DL ● 前回作成：1997年 5月 ¡ 電子デバイス MSM514400D/DL 1,048,576-Wordx4-Bit DYNAMIC RAM：高速ページモード • 概要 MSM514400D/DLはCMOSプロセス技術を用いた1,048,576ワード×4ビット構成のダイナミックラン

MSM514400

Abstract: MSM514400E
Contextual Info: Semiconductor This version : Sep.2000 MSM514400E 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400E is a 1,048,576-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E achieves high integration, high-speed operation, and low-power consumption

Contextual Info: OKI semiconductor_ MSC2358-XXKS2 1.048.576 Word x 8 Bit PYNAMIC RAM MODULE: FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2358-xxKS2 is a fully decoded, 1,048,576 word by 8 bit CMOS dynamic random access memory composed of two 4Mb DRAMs in SOJ MSM514400JS . The mounting of two SOJs together

Contextual Info: OKI semiconductor MSC2355-xxYS12 1.048.576 Word x 36 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2355-xxYS12 is a 1,048,576 word by 36 bit dynamic Random Access Memory RAM Module which is comprised of eight pieces of the MSM514400 and four pieces of the MSM5110OOA

tdq-4d

Abstract: MSM514400 ZIP20-P-400
Contextual Info: O K I Semiconductor MSM514400 C/CL_ 1,048,576-W ord x 4-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is

MSC2358-10KS2

Abstract: MSC2358-80KS2 MOPE
Contextual Info: OKI sem iconductor_ MSC2358-XXKS2_ 1.048.576 W ord x 8 Bit PYNAMIC RAM MODULE: FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2358-xxKS2 is a fully decoded, 1,048.576 word by 8 bit CMOS dynamic random access memory composed of two 4Mb DRAMs in SOJ MSM514400JS . The mounting of two SOJs together

Contextual Info: O K I Semiconductor MSM514 4 1 OA/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE WRITE PER BIT MODE TYPE DESCRIPTION The MSM514410A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.

ZIP20-P-400

Contextual Info: O K I Sem iconductor M SM 514400C /C L_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is