MSM5110 Search Results

MSM511000

Abstract: ZIP20-P-400 dip26
Contextual Info: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

MSM511000

Abstract: ZIP20-P-400 msm511000h
Contextual Info: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 ECS semiconductor b I ' / - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

MSC2313A-80YS8

Contextual Info: O K I semiconductor MSC2313A-xxYS8/KS8_ 1,048,576 Word BY 8 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2313A-xxYS8/KS8 is a fully decoded, 1,048,576 word x 8 bit CMOS dynamic random access memory composed of eight 1Mb DRAMs in SOJ MSM511000AJS . The mounting of eight SOJs

18-PIN

Abstract: 26-PIN ZIP20-P-400 MSM OKI
Contextual Info: O K I Semiconductor MSM5 1 1 0 0 1 B 1,048,576-Word x 1-Bit DY N A M IC R A M : N IBBLE M O D E TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The

1ST24

Abstract: MSC2312B-70YS9
Contextual Info: O K I Semiconductor M SC2312B-xxYS9/KS9 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode D ESC R IP TIO N The OKI M SC 2312B -xxY S9/K S9 is a fully decoded 1,048,576-w ord x 9-bit CM O S D ynam ic Random Access Memory Module com posed of nine 1-Mb DRAM s in SOJ MSM511000B packages mounted with

Contextual Info: O K I Semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I Semiconductor MSM5110 OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-w ord x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

Contextual Info: O K I semiconductor MSM511002A 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION T h e M S M 5 1 10 0 2 A is a new generation dynam ic R A M organized as 1 ,0 4 8 ,5 7 6 w ords x 1 bit. T h e technology used to fabricate the M S M 5 1 10 0 2 A is O K I's C M O S silicon g ate process technology.

Contextual Info: O K I semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I Semiconductor MSM5110OOB/BL_ 1,048,576-Word x 1-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

Contextual Info: O K I Semiconductor MSM511000H_ 1,048,576-Word x 1-Bit DYN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power

mz 1532

Abstract: MSM511001A-70 FZJ 165 511001A
Contextual Info: 4bE D w • b?24S4ü O K I □ □□ 'IS n SEMICONDUCTOR O K I semiconductor MSM511001A 1,048,576-WORD b'H «O K IJ GROUP T - V é 'Z S W 1-BITS DYNAMIC RAM x GENERAL DESCRIPTION The MSM511001A is a new generation dynamic RAM organized as 1,048,576 woids by 1 bit. The

msm514260c

Abstract: MSM514256C edo 16m x 32
Contextual Info: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~

Contextual Info: Semiconductor OKI MSM511000H 1,048,576-Word x 1-Bit DYN A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power

Contextual Info: O K I semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The M SM 511001B is a new generation dynam ic RAM organized as 1,048,576 w ords x 1 bit. The technology used to fabricate the MSM511001B is OKI's CM OS silicon gate process technology. The

Contextual Info: OKI semiconductor MSC2355-xxYS12 1.048.576 Word x 36 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2355-xxYS12 is a 1,048,576 word by 36 bit dynamic Random Access Memory RAM Module which is comprised of eight pieces of the MSM514400 and four pieces of the MSM5110OOA

MSM511000

Abstract: MSM511000CL ZIP20-P-400 TWC-S5
Contextual Info: O K I Semiconductor MSM5 1 10 OOC/CL_ 1,048,576-Word x 1-Bit D Y N A M IC R A M : FAST P A G E M O D E TY PE DESCRIPTION The MSM511000C/CL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000C/CL is

diagram of hi 3520

Contextual Info: O K I Semiconductor MSC2313B-xxYS8/KS8 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The O KI M SC 2313B -xxY S8/K S8 is a fully decoded 1,048,576-w ord x 8-bit CM O S D ynam ic Random Access Memory Module composed of eight 1-Mb DRAMs in SOJ MSM511000B packages mounted with

m5m5110

Abstract: MSM511001-10 MSM511001-12 T-46 OGD41
Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 b I ' / ECS semiconductor - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

MSM511000A-8A

Abstract: tos 40101 MSM511000 msm511000a DIN 46231
Contextual Info: i4bE D • b?eHE4ü O K I OKI OOOTSOM I b ô «O K IJ SEMI CONDUCTOR 6R0UP semiconductor MSM511000A r - V i '2 3 1,048,576-W ORD x 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511000A is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The tech­

bl 9 a2

Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
Contextual Info: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.