Untitled
Abstract: No abstract text available
Text: FDP22N50N N-Channel UniFETTM II MOSFET 500 V, 22 A, 220 m Features Description • RDS on = 185 m (Typ.) @ VGS = 10 V, ID = 11 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDP22N50N
FDP22N50N
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Untitled
Abstract: No abstract text available
Text: FDP22N50N N-Channel UniFETTM II MOSFET 500 V, 22 A, 220 mΩ Features Description • RDS on = 185 mΩ (Typ.) @ VGS = 10 V, ID = 11 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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FDP22N50N
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HG62G
Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2
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PF0025
PF0026
NMT900,
PF0027
PF0030
PF0031
NMT900
PF0032
PF0040
PF0042
HG62G
HG71G154
hg62g051
HG62G019
HG71G063
HG71G
HG71G030
HG62g014
HG51B
HG62G035
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527 39a
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD226408 TECHNICAL DATA DATA SHEET 472, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE
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SHD226408
O-257
250mA
SHD226408
527 39a
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SHD226408
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD226408 TECHNICAL DATA DATA SHEET 472, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE
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SHD226408
O-257
SHD226408
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25N80C
Abstract: No abstract text available
Text: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions
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25N80C
ISOPLUS220
E72873
25N80C
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APV2121S
Abstract: photovoltaic MOSFET driver APV1121S
Text: 6 Control circuit 2 4 1 4 Control circuit 3 3 2 C-UL Pending PHOTOVOLTAIC MOSFET DRIVER APV1,2 PHOTOVOLTAIC MOSFET DRIVER 1 UL Pending FEATURES TYPICAL APPLICATIONS 1. High-speed switching Since release time is 0.1 ms, the MOSFET can be turned off quickly in
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AQY21SOP
Abstract: AQV251 photomos aqy210 AQV257 AQV214E Application transistor 1002 ac to dc transformer AQV10 2803 relay driver ic
Text: PhotoMOS Relay Technical Information How PhotoMOS Relays Operate: Optoelectronic device directly drives a power MOSFET. Semiconductor relay incorporating the advantages of both electromagnetic OUT relays and semiconductors. LED OUT Power MOSFET Optoelectronic
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AQZ105
AQZ205
AQZ107
AQZ207
AQZ104
AQZ204
AQZ202V
AQZ102D
AQZ202D
AQZ205V
AQY21SOP
AQV251
photomos
aqy210
AQV257
AQV214E Application
transistor 1002
ac to dc transformer
AQV10
2803 relay driver ic
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20n60s1
Abstract: 60v 10a p type mosfet 20n60s
Text: / FMP20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] 2.7 ±0.1 ±0 .2 6.4 ±0.2 φ3 .6 3.6 ±0.2 Applications UPS Server Telecom Power conditioner system
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FMP20N60S1
O-220
O-220AB
20n60s1
60v 10a p type mosfet
20n60s
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20N60S1
Abstract: Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S
Text: / FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]
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FMV20N60S1
O-220F
20N60S1
Fmv20n60
FMV20N60S1
fuji electric lot code
20N60S
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Untitled
Abstract: No abstract text available
Text: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features n n n n n HEXFET Power MOSFET Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated
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IRF3305
45C/W
IRF3305
O-220AB
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G60N
Abstract: Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 TC1410N 100n00
Text: AN1256 Microchip’s Power MOSFET Driver Simulation Models Author: Cliff Ellison Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The simulation models for Microchip’s power MOSFET drivers aid in the design and analysis of various circuits
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AN1256
TC1410N
DS01256A-page
G60N
Thermistor pspice
mosfet mark code G4
ic 8870
ORCAD PSPICE BOOK
AN1256
IRFZ34
MBR340
100n00
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FMW20N60S1
Abstract: 20n60s1 20n60s mosfet 600V 20A FMW20N60S1HF
Text: / FMW20N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]
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FMW20N60S1HF
O-247-P2
FMW20N60S1
20n60s1
20n60s
mosfet 600V 20A
FMW20N60S1HF
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Untitled
Abstract: No abstract text available
Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
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15N60C5
ISOPLUS220TM
E72873
20090209b
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Untitled
Abstract: No abstract text available
Text: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM
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23N60C5
ISOPLUS220TM
E72873
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Untitled
Abstract: No abstract text available
Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
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15N60C5
ISOPLUS220TM
E72873
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Untitled
Abstract: No abstract text available
Text: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
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19N60C5
ISOPLUS220TM
E72873
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19n60
Abstract: No abstract text available
Text: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
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19N60C5
ISOPLUS220TM
E72873
20090209b
19n60
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19n60
Abstract: No abstract text available
Text: IXKC 19N60C5 Advanced Technical Information ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM
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19N60C5
ISOPLUS220TM
E72873
19n60
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19n60
Abstract: No abstract text available
Text: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
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19N60C5
ISOPLUS220TM
E72873
19n60
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GS54
Abstract: No abstract text available
Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
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ISOPLUS220TM
E72873
GS54
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1N4148
Abstract: J-STD-020B SC1403 SC420 SC420A SC420AIMLTRT
Text: SC420A TM High Speed, Combi-Sense , Synchronous Power MOSFET Driver for Mobile Applications POWER MANAGEMENT Description Features The SC420A is a cost effective Dual MOSFET Driver, incorporating Semtech’s patented Combi-SenseTM technology, designed for switching High and Low side Power
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SC420A
SC420A
3000pF
MLP-12
1N4148
J-STD-020B
SC1403
SC420
SC420AIMLTRT
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IRF 930
Abstract: IRF3305
Text: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Description HEXFET Power MOSFET
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IRF3305
45C/W
IRF3305
O-220AB
O-220AB
IRF 930
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Untitled
Abstract: No abstract text available
Text: IXKC 15N60C5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM
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15N60C5
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E72873
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