MMBT5087 Search Results

Contextual Info: ON Semiconductort Low Noise Transistor MMBT5087LT1 PNP Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −50 Vdc Collector−Base Voltage VCBO −50 Vdc Emitter−Base Voltage VEBO −3.0 Vdc IC −50 mAdc Collector Current — Continuous

MMBT5087

Abstract: BF254
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

Contextual Info: Low Noise Transistor PNP Silicon MMBT5087LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous

2N5086

Abstract: 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5087 . 14E ° | fl J | 0007575 PNP EPITAXIAL SILICON TRANSÌSTOR T LOW NOISE TRANSISTOR - 3 9 - ñ SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

F 1.0K 250

Abstract: mmbt5087lt1
Contextual Info: ON Semiconductort Low Noise Transistor MMBT5087LT1 PNP Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –50 Vdc Collector–Base Voltage VCBO –50 Vdc Emitter–Base Voltage VEBO –3.0 Vdc IC –50 mAdc Collector Current — Continuous

2N5087 equivalent

Abstract: 2N5087 fairchild 741 2N5086 MMBT5086 MMBT5087 2n5087 fairchild
Contextual Info: 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 B SOT-23 E Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA. Sourced from Process 62.

Contextual Info: Low Noise Transistor PNP Silicon MMBT5087LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous

MMBT5087

Contextual Info: MMBT5087 PNP Silicon Epitaxial Planar Transistor for general purpose application SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage

SOT-23 MARK 2Q

Abstract: BEL 167 transistor transistor k 2541 2N5086 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

MMBT5087LT1

Contextual Info: ON Semiconductort Low Noise Transistor MMBT5087LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –50 Vdc Collector–Base Voltage VCBO –50 Vdc Emitter–Base Voltage VEBO –3.0 Vdc IC –50 mAdc Symbol Max Unit

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low N oise Transistor MMBT5087LT1 PNP Silicon M otorola Preferred D evice COLLECTOR 3 2 EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating v C EO -50 Vdc Collector-Base Voltage

MMBT5087LT1

Abstract: MMBT5087LT1G MMBT5087LT3 MMBT5087LT3G
Contextual Info: MMBT5087LT1 Low Noise Transistor PNP Silicon Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −50 Vdc Collector −Base Voltage VCBO −50 Vdc Emitter −Base Voltage VEBO

OMA250

Abstract: MMBT5086 MMBT5087
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5087 . 14È 0 0 0 07 57 5 fl J| | 7^142 PNP EPITAXIAL SILICON TRANSISTOR T - 3 9 - fí LOW N O ISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage

MMBT5087LT1

Contextual Info: MOTOROLA Order this document by MMBT5087LT1/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor MMBT5087LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector–Emitter Voltage VCEO –50

2NS087

Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581
Contextual Info: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.

2n5087

Abstract: 2N5086 BT5086 2N5087 equivalent
Contextual Info: S E M IC O N D U C T O R tm 2N5086 2N5087 MMBT5086 MMBT5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier T his device is designed for low level, high gain, low noise general purpose am p lifier a p p lica tio ns at co lle cto r currents to 50 mA. Sourced from Process 62.

D 304 x

Abstract: MMBT5087LT1G MMBT5087LT3G 50K MARKING SOT23
Contextual Info: MMBT5087LT1G Low Noise Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −50 Vdc Collector −Base Voltage

an569/d

Abstract: MMBT5087LT1 MMBT5087LT1G MMBT5087LT3 MMBT5087LT3G
Contextual Info: MMBT5087LT1 Low Noise Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −50 Vdc Collector −Base Voltage VCBO −50 Vdc Emitter −Base Voltage

MMBT5087LT1

Contextual Info: ON Semiconductort Low Noise Transistor MMBT5087LT1 PNP Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –50 Vdc Collector–Base Voltage VCBO –50 Vdc Emitter–Base Voltage VEBO –3.0 Vdc IC –50 mAdc Collector Current — Continuous

Contextual Info: MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MMBT5087LT1

Abstract: m176 2M172 m171 ic
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Noise Transistor PNP Silicon MMBT5087LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous

SOT-23 MARK 2Q

Abstract: BF254 sot-23 transistor p2 marking
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

motorola transistor dpak marking

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor MMBT5087LT1 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage