MGF0920A Search Results

MGF0920A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGF0920A		Mitsubishi	TRANS JFET N-CH 10V 1500MA 3HERMETIC		Original	PDF
MGF0920A		Mitsubishi	L & S BAND GaAs FET		Original	PDF

MGF0920A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGF0920A Abstract: IM335 pt 11400 Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm	Original	MGF0920A MGF0920A 32dBm 15dBm 400mA 50pcs) t-155 IM335 pt 11400	PDF
MGF0920A Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm	Original	MGF0920A MGF0920A 32dBm 15dBm 400mA 50pcs) June/2004	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0920A L & S BAND G a As FET [ S M D non - matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=32dBm TYP. @ f=1,9GHz,Pin=15dBm	OCR Scan	MGF0920A MGF0920A 32dBm 15dBm 400mA volta164	PDF
MGF0920A Abstract: n channel fet k 1118 Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm	Original	MGF0920A MGF0920A 32dBm 15dBm 400mA n channel fet k 1118	PDF
MITSUBISHI CAPACITOR Abstract: MGF0920A capacitor c12 chip capacitor Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 20 th Feb. 2007 SUBJECT: RF Characteristics of MGF0920A in 3.4 to 3.6 GHz-band SUMMARY: This application note shows RF characteristics of MGF0920A －－ Measurement conditions are as follows :	Original	MGF0920A MGF0920A FREQUENCY13 CCL-870HL MITSUBISHI CAPACITOR capacitor c12 chip capacitor	PDF
GP 525 smd Abstract: MGF0920A F1190 tbd 0723 Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm	Original	MGF0920A MGF0920A 32dBm 15dBm 400mA breakdow18 GP 525 smd F1190 tbd 0723	PDF
MGF0920A Abstract: 13-18V Mark GG Contextual Info: 三菱半導体〈高周波デバイス〉 MGF0920A L & S帯高出力GaAs FET 概要 M G F 09 2 0 A は U H F 帯での増幅器用に設計されたN チャネル外形図単位:mm 0.80 Gate Mark Round corner GaAs FETです。	Original	MGF0920A PO32dBmf1 Pin15dBm GP18dBf1 add45f1 IDS400mA Rg200 VDS10V 400mA MGF0920A 13-18V Mark GG	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0920A L & S BAND / 1.6W SMD non - matched DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm	Original	MGF0920A MGF0920A 32dBm 15dBm 400mA 50pcs)	PDF
MGF0920A Contextual Info: < High-power GaAs FET small signal gain stage > MGF0920A L & S BAND / 1.6W SMD non - matched DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm	Original	MGF0920A MGF0920A 32dBm 15dBm 400mA 50pcs) -65ctric	PDF
MGF4919G Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60 Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии	Original	SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1	PDF
MGFS45H2201G Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety	Original	H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf	PDF