Untitled
Abstract: No abstract text available
Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as
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SXB-2089Z
2500MHz
2500MHz
OT-89
SXB-2089Z
PSF-S01-1mm
EEF-101407
ECB-102925-B
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MCH185A221JK
Abstract: MCH185A390JK ML200C SGA-8543Z PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21
Text: Design Application Note - AN-079 SGA-8543Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-8543Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.5 GHz. This application note illustrates application circuits
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AN-079
SGA-8543Z
dev2450
2440MHz
EAN-104851
MCH185A221JK
MCH185A390JK
ML200C
PSF-S01
AN079
SOT343 C5
Getek
Sirenza AN-21
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4069 NOT GATE IC
Abstract: NEC LDMOS
Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
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NE5520379A
GSM900
4069 NOT GATE IC
NEC LDMOS
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rm73z1j000
Abstract: MCH182F104ZK TRANSISTOR R57 phillips ERJ-2RKF-20R0 MCH312F105ZP MCH215A101JK smd transistor RA5 smd transistor RA4 KXN1332A LL2012-F12NK
Text: Using The HFA3524EVAL Board TM March 2000 AN9809.3 Author: Milutin Culibrk Introduction The HFA3524 is a highly integrated Dual Frequency Synthesizer ideally suited for use in communications applications. The Synthesizer features include a dual modulus prescaler for
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HFA3524EVAL
AN9809
HFA3524
rm73z1j000
MCH182F104ZK
TRANSISTOR R57 phillips
ERJ-2RKF-20R0
MCH312F105ZP
MCH215A101JK
smd transistor RA5
smd transistor RA4
KXN1332A
LL2012-F12NK
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2052-1215-00
Abstract: NE622M04 rf ic 3358 2052-1215 AN1037 NE662M04 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093
Text: California Eastern Laboratories APPLICATION NOTE AN1037 Optimizing a Silicon Bipolar LNA Performance for Blue Tooth Applications Abstract The NE662M04 is NEC's latest generation of Silicon Bipolar junction RF-transistor, using a state-of-the-art UHSO 25 GHz fT wafer process. It provides excellent low voltage/low
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AN1037
NE662M04
2052-1215-00
NE622M04
rf ic 3358
2052-1215
AN1037
MCH185A121JK
MCH185A4R7CK
NE662M04-EVAL
transistor c 6093
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KXN1332A
Abstract: ecuv1h102kbv KXN1332 rm73z1j000 MCH312F105ZP 2.4GHZ synthesizer
Text: Using The HFA3524AEVAL Board Sem iconductor A p p lic a tio n N o te S e p te m b e r 1998 A N 9 8 0 9 .1 Author: Milutin Culibrk Introduction The HFA3524A is a highly integrated Dual Frequency Synthesizer ideally P - R I S M ) j ì j ì suited for use in communications
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HFA3524AEVAL
HFA3524A
HFA3524,
ConnectionsECU-V1H102KBV
MCH185A5R6CK
ERJ-2RKF10R0
ERJ-2RKF1210
ERJ-2RKF-20R0
KXN1332A
ecuv1h102kbv
KXN1332
rm73z1j000
MCH312F105ZP
2.4GHZ synthesizer
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12c5a
Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC
Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.
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NE5520379A
9Z001
GSM900/DCS
12c5a
NE55xx
GSM900
MCH185A180JK
NE5520379A
NE5520379A-T1A-A
16651
IC 7109
LDMOS NEC
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J50 mosfet
Abstract: MCH185A180JK GSM900 MCH185A4R7CK NE5520379A NE5520379A-T1A PT 4962 FET 4016 ldmos nec
Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
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NE5520379A
NE5520379A
J50 mosfet
MCH185A180JK
GSM900
MCH185A4R7CK
NE5520379A-T1A
PT 4962
FET 4016
ldmos nec
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TAJB105KLRH
Abstract: No abstract text available
Text: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier
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SXB-2089Z
SXB-2089Z
43dBm
24dBm
AN075
EDS-104625
TAJB105KLRH
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MCH185C122KK
Abstract: SGA-9089Z AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK
Text: Design Application Note - AN-080 SGA-9089Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-9089Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.0 GHz. This application note illustrates application circuits
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AN-080
SGA-9089Z
2440MHz
EAN-105081
MCH185C122KK
AN080
SGA-9089
MCH185A390JK
MCH185A4R7CK
ML200C
101216
LL1608-FS4N7S
MCH185A5R6CK
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CL10B104KONC
Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200
Text: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the
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AN022
SGA-9289
EAN-101535
CL10B104KONC
AN022
MCH185A220JK
la 4440 amplifier circuit diagram 300 watt
MCH185A390JK
MCH185A100DK
MCH185A4R7CK
Sirenza amplifier SOT-89
MCR03J200
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55117 inductor
Abstract: eic 4191 cdi schematics pcb ACPR2 169901 1 micro farad capacitor cdi schematic cdi schematics 78364 104914
Text: PRELIMINARY DATA SHEET ECG013 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications 500 to 2500 MHz 45 dBm Typical OIP3 at 1960 MHz Highly Reliable InGaP HBT 15.0 dB Typical Gain at 1900 MHz 25.5 dBm Typical P1dB at 1960 MHz Excellent Stability
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ECG013
ECG013
SS-000044-000
55117 inductor
eic 4191
cdi schematics pcb
ACPR2
169901
1 micro farad capacitor
cdi schematic
cdi schematics
78364
104914
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16 pin 4x4 amplifier gsm
Abstract: mch185C102kk MCH185A100DK ECJ-1VF1A105Z
Text: PRELIMINARY DATA SHEET ECP052 0.5 WATT POWER AMPLIFIER Features Applications 0.8GHz to 1GHz 28.0dBm P1dB High Linearity: 44dBm OIP3 High Efficiency: PAE > 50% 17dB Linear Gain High Reliability Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE
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ECP052
44dBm
QFN-16
ECP052
ECP052G
ECP052G-500
ECP052G-1000
ECP052D
ECP052D-500
ECP052D-1000
16 pin 4x4 amplifier gsm
mch185C102kk
MCH185A100DK
ECJ-1VF1A105Z
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TAJB105KLRH
Abstract: tic 2160 SXB-2089Z SXB-2089 LL1608-FSR27J MCH185A121JK ML200C an078 MCH185C122KK Sirenza AN-21
Text: DESIGN APPLICATION NOTE - AN-078 SXB-2089Z Amplifier Application Circuits Abstract Circuit Details Sirenza Microdevices’ SXB-2089 is a high high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC designed for operation from 5 to 2500 MHz. This application note illustrates application circuits for 450MHz (Mobile Wireless Band) &
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AN-078
SXB-2089Z
SXB-2089
450MHz
2140MHz
TAJB105KLRH
MCH185C122KK
1200pF
MCH185A120JK
MCH185A010CK
tic 2160
LL1608-FSR27J
MCH185A121JK
ML200C
an078
Sirenza AN-21
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CL10B104KONC
Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021
Text: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the
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AN021
SGA-9189
EAN-101534
CL10B104KONC
MCR03J100
MCH185A4R7CK
AN021
MCR03*J100
MCH185A390JK
Sirenza amplifier SOT-89
ECB-102216-B
AN-021
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4069 NOT GATE IC
Abstract: GSM900 MCH185A180JK MCH185A4R7CK NE5520379A NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec
Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
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NE5520379A
NE5520379A
NE5520379A-EVAL
4069 NOT GATE IC
GSM900
MCH185A180JK
MCH185A4R7CK
NE5520379A-T1A
tc 9122
17339
NEC LDMOS
ldmos nec
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NEC 718
Abstract: LDMOS NEC
Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE5520379A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 15 dB TYP @ 900 MHz
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NE5520379A
24-Hour
NEC 718
LDMOS NEC
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TRANSISTOR R57 phillips
Abstract: KXN1332A MCH312F105ZP HFA3524A MCH215A101JK smd transistor RA4 ERJ-2RKF-20R0 MCH182F104ZK MCH215 LL2012-F12NK
Text: Using The HFA3524EVAL, HFA3524AEVAL Board Application Note September 1999 AN9809.2 Author: Milutin Culibrk Introduction The HFA3524, HFA3524A is a highly integrated Dual Frequency Synthesizer ideally suited for use in communications applications. The Synthesizer features include a dual
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HFA3524EVAL,
HFA3524AEVAL
AN9809
HFA3524,
HFA3524A
ERJ-2RKF8251
TRANSISTOR R57 phillips
KXN1332A
MCH312F105ZP
MCH215A101JK
smd transistor RA4
ERJ-2RKF-20R0
MCH182F104ZK
MCH215
LL2012-F12NK
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TAJB105KLRH
Abstract: SXB-2089Z MCH185A220J PSF-S01 marking c7 sot-89
Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as
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SXB-2089Z
2500MHz
2500MHz
OT-89
SXB-2089Z
PSF-S01-1mm
EEF-101407
ECB-102925-B
TAJB105KLRH
MCH185A220J
PSF-S01
marking c7 sot-89
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sot 23 S01
Abstract: SXB-2089 TAJB105KLRH SXB-2089Z MCH185A1R8CK AN-078 43ACP
Text: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier
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SXB-2089Z
SXB-2089Z
AN075
EDS-104625
sot 23 S01
SXB-2089
TAJB105KLRH
MCH185A1R8CK
AN-078
43ACP
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MARKING RM* dbm sot89
Abstract: No abstract text available
Text: SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier
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SXB-2089Z
SXB-2089Z
43dBm
24dBm
AN075
EDS-104625
MARKING RM* dbm sot89
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LDMOS NEC
Abstract: No abstract text available
Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP ������������� ����
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NE5520379A
GSM900
HS350-P3
WS260
VP215
IR260
LDMOS NEC
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J50 mosfet
Abstract: LDMOS NEC
Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
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NE5520379A
GSM900
24-Hour
J50 mosfet
LDMOS NEC
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2052-5636-02 100pf
Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS
Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION
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NE5520379A
9Z001
NE5520379A
HS350-P3
2052-5636-02 100pf
GSM900
MCH185A180JK
NE5520379A-T1A
NEC LDMOS
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