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ROHM Semiconductor MCH185A180JK CAP CER 18PF 50V C0G/NP0 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCH185A180JK	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.00983	Buy Now
	MCH185A180JK	Cut Tape			1	1 $0.1 10 $0.1 100 $0.1 1000 $0.1 10000 $0.1	Buy Now
Bristol Electronics	MCH185A180JK		2,813			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MCH185A180JK		7,465			1 $0.048 10 $0.048 100 $0.048 1000 $0.03 10000 $0.0216	Buy Now
	MCH185A180JK		2,250			1 $0.072 10 $0.072 100 $0.072 1000 $0.024 10000 $0.0144	Buy Now
	MCH185A180JK		1,931			1 $0.2 10 $0.2 100 $0.09 1000 $0.06 10000 $0.06	Buy Now
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Chip 1 Exchange	MCH185A180JK		72,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MCH185A180JK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MCH185A180JK		ROHM	Ceramic Capacitors, Capacitors, CAP CER 18PF 50V 5% NP0 0603		Original	PDF

MCH185A180JK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BJT with i-v characteristics Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK Text: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available	Original	PDF	ECG015 OT-89 ECG015 OT-89 SS-000145-000 BJT with i-v characteristics SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR LL1608-F15NK MCH185A180JK MCH185A560JK
4069 NOT GATE IC Abstract: NEC LDMOS Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz	Original	PDF	NE5520379A GSM900 4069 NOT GATE IC NEC LDMOS
MCH182F104ZK Abstract: gsm module datasheet DCS1800 ECM007 EGSM900 MCH185A180JK C5611 ecshi Power Amplifier Module for GSM MCH185A330JK Text: PRELIMINARY DATA SHEET ECM007 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally input and output matched High Efficiency EGSM=55%, DCS= 50% Small size On Board band select and output power control	Original	PDF	ECM007 EGSM900 DCS1800 ECM007 SS-000374-000 AP-000513-000 MCH182F104ZK gsm module datasheet MCH185A180JK C5611 ecshi Power Amplifier Module for GSM MCH185A330JK
MCR03EZH-J000 Abstract: mch185C102kk MCH185A020CK bipolar transistor die layout MCH185A180JK MCR03EZHJ ECP200 ECS-H1CC106R MCH185A101JK QFN-16 Text: ECP200 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 1800 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters	Original	PDF	ECP200 2300MHz PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP200 MCR03EZHJ000 2012-15N PZC04SGAN ECP200D 60-000523-000B MCR03EZH-J000 mch185C102kk MCH185A020CK bipolar transistor die layout MCH185A180JK MCR03EZHJ ECS-H1CC106R MCH185A101JK QFN-16
30 micro farad capacitor 6000 volt Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660 Text: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability	Original	PDF	ECG014 OT-89 ECG014 OT-89 SS-000122-000 30 micro farad capacitor 6000 volt HBT transistor j1 05075 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
cdi schematics pcb Abstract: datasheet ic 7822 eic 4191 1 micro farad capacitor 50 VOLT cdi schematic cdi schematics ECG014 LL1005-FH1N0S LL1608-F15NK LL1608-F33NK Text: DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications 50 to 2000 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 23.5 dBm Typical P1dB at 1900 MHz Excellent Stability	Original	PDF	ECG014 OT-89 ECG014 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 cdi schematics pcb datasheet ic 7822 eic 4191 1 micro farad capacitor 50 VOLT cdi schematic cdi schematics LL1005-FH1N0S LL1608-F15NK LL1608-F33NK
12c5a Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.	Original	PDF	NE5520379A 9Z001 GSM900/DCS 12c5a NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC
ECP050D-500 Abstract: No abstract text available Text: ECP050 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 1800 MHz - 2300MHz 28dBm P1dB High Linearity: 45dBm OIP3 High Efficiency: PAE > 45% 15 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters	Original	PDF	ECP050 2300MHz 28dBm 45dBm PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP050 ECP050G ECP050G-500 ECP050G-1000 ECP050D-500
16l soic8 Abstract: qfn16 thermal resistance Text: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters	Original	PDF	ECP053 28dBm 43dBm QFN-16 ECP053 ECP053G ECP053G-500 ECP053G-1000 ECP053D ECP053D-500 16l soic8 qfn16 thermal resistance
J50 mosfet Abstract: MCH185A180JK GSM900 MCH185A4R7CK NE5520379A NE5520379A-T1A PT 4962 FET 4016 ldmos nec Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz	Original	PDF	NE5520379A NE5520379A J50 mosfet MCH185A180JK GSM900 MCH185A4R7CK NE5520379A-T1A PT 4962 FET 4016 ldmos nec
300 watts amplifier schematics Abstract: MCH185C102KK power amplifier 500 watt transistor circuit Text: ECP103 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters Multi-carrier systems 2.1-2.7GHz 30.5 dBm P1dB High Linearity: 46 dBm OIP3 High Efficiency: PAE > 40% 11 dB Linear Gain Single 5V Supply High Reliabilty	Original	PDF	ECP103 QFN-16 ECP103 ECP103G ECP103G-500 ECP103G-1000 ECP103D ECP103D-500 ECP103D-1000 QFN-16 300 watts amplifier schematics MCH185C102KK power amplifier 500 watt transistor circuit
Untitled Abstract: No abstract text available Text: ECP200 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 100 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 11 dB Linear Gain at 1.96GHz Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE	Original	PDF	ECP200 2300MHz 96GHz PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP200 ECP200G ECP200G-500 ECP200G-1000 ECP200D
ECG015B Abstract: MCR10JW000 ROHM SOT89 MARKING ECG015 marking 0603 CAPACITOR HP RF amplifier SOT-89 Text: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems High Linearity Amplifiers Cellular, PCS, WLL Package Available -B SOT-89	Original	PDF	ECG015 OT-89 ECG015 OT-89 AP-000145-000 AP-000192-000 AP-000194-000 AP-000487-000 ECG015B MCR10JW000 ROHM SOT89 MARKING ECG015 marking 0603 CAPACITOR HP RF amplifier SOT-89
16 pin 4x4 amplifier gsm Abstract: mch185C102kk MCH185A100DK ECJ-1VF1A105Z Text: PRELIMINARY DATA SHEET ECP052 0.5 WATT POWER AMPLIFIER Features Applications 0.8GHz to 1GHz 28.0dBm P1dB High Linearity: 44dBm OIP3 High Efficiency: PAE > 50% 17dB Linear Gain High Reliability Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE	Original	PDF	ECP052 44dBm QFN-16 ECP052 ECP052G ECP052G-500 ECP052G-1000 ECP052D ECP052D-500 ECP052D-1000 16 pin 4x4 amplifier gsm mch185C102kk MCH185A100DK ECJ-1VF1A105Z

NEC 718 Abstract: LDMOS NEC Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE5520379A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 15 dB TYP @ 900 MHz	Original	PDF	NE5520379A 24-Hour NEC 718 LDMOS NEC
mch185C102kk Abstract: MCR10JW000 cdi schematics pcb cdi schematics capacitor 0603 0603 CAPACITOR cdi schematic MCH185A180JK resistor 2512 ROHM capacitor Text: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Application Note: Reduction of Out of Band Gain By changing C4 the input coupling/blocking capacitor to 2.2pF from the 56pF, the out of band gain can be reduced to less than 12dB at 300MHz. The following BOM and schematics for 1.9	Original	PDF	ECG015 300MHz. 14GHz 14GHz 45GHz 1000pF CH185A010CK N0R7C500NT MD-000290-000 mch185C102kk MCR10JW000 cdi schematics pcb cdi schematics capacitor 0603 0603 CAPACITOR cdi schematic MCH185A180JK resistor 2512 ROHM capacitor
Untitled Abstract: No abstract text available Text: ECP203 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 2.1 - 2.7GHz 32.5 dBm P1dB High Linearity: 48 dBm OIP3 10 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters Multi-carrier systems	Original	PDF	ECP203 QFN-16 ECP203 ECP203G ECP203G-500 ECP203G-1000 ECP203D ECP203D-500 ECP203D-1000 QFN-16
LL1608-F15N Abstract: Amplifier 1W SOT-89 J2/TriQuint SOT-89 TAPE AND REEL Text: PRODUCTION DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications 50 to 2000 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 23.5 dBm Typical P1dB at 1900 MHz Excellent Stability	Original	PDF	ECG014 OT-89 ECG014 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 ECG014B LL1608-F15N Amplifier 1W SOT-89 J2/TriQuint SOT-89 TAPE AND REEL
LDMOS NEC Abstract: No abstract text available Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP ��	Original	PDF	NE5520379A GSM900 HS350-P3 WS260 VP215 IR260 LDMOS NEC
J50 mosfet Abstract: LDMOS NEC Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz	Original	PDF	NE5520379A GSM900 24-Hour J50 mosfet LDMOS NEC
SSG TRANSISTOR Abstract: cdi schematics pcb ap 6928 ACPR2 SSG 23 TRANSISTOR 2450 MHz low noise amplifier schematic Amplifier SOT-89 c4 ECG015 HP RF amplifier SOT-89 863300 Text: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems High Linearity Amplifiers Cellular, PCS, WLL Package Available -B SOT-89	Original	PDF	ECG015 OT-89 ECG015 OT-89 AP-000145-000 ECG015: AP-000192-000 AP-000194-000 AP-000487-000 SSG TRANSISTOR cdi schematics pcb ap 6928 ACPR2 SSG 23 TRANSISTOR 2450 MHz low noise amplifier schematic Amplifier SOT-89 c4 HP RF amplifier SOT-89 863300
CW20C104K Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K Text: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,	Original	PDF	AGA100M050 SKA100M050 AGA100M063 SKA100M063 AFK477M10F24T AFK686M16D16T AFK107M16D16T AFK157M16X16T AFK158M16H32T AFK226M16C12T CW20C104K CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
2052-5636-02 100pf Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION	Original	PDF	NE5520379A 9Z001 NE5520379A HS350-P3 2052-5636-02 100pf GSM900 MCH185A180JK NE5520379A-T1A NEC LDMOS
class h power amplifier schematic Abstract: MCH185A100DK ECJ1VF1A105Z ECP100 ECS-H1CC106R MCH185A101JK MCH185A180JK QFN-16 06035J0R5BBT L1123 Text: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%	Original	PDF	ECP100 PCS/CDMA2000/IMT2000/UMTS 2300MHz 96GHz QFN-16 ECP100 SS-000535-000 class h power amplifier schematic MCH185A100DK ECJ1VF1A105Z ECS-H1CC106R MCH185A101JK MCH185A180JK QFN-16 06035J0R5BBT L1123

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MCH185A180JK Price and Stock

ROHM Semiconductor MCH185A180JK

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MCH185A180JK Datasheets (1)

MCH185A180JK Datasheets Context Search

BJT with i-v characteristics

4069 NOT GATE IC

MCH182F104ZK

MCR03EZH-J000

30 micro farad capacitor 6000 volt

cdi schematics pcb

12c5a

ECP050D-500

16l soic8

J50 mosfet

300 watts amplifier schematics

Untitled

ECG015B

16 pin 4x4 amplifier gsm

NEC 718

mch185C102kk

Untitled

LL1608-F15N

LDMOS NEC

J50 mosfet

SSG TRANSISTOR

CW20C104K

2052-5636-02 100pf

class h power amplifier schematic