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    Fuji Electric Co Ltd MB81C75-35P

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    MB81C75 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB81C75-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MB81C75-27 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MB81C75-30 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MB81C75-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    MB81C75 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips diode PH 33J

    Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without


    Original     		PDF 10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY

    MB81C75-35

    Abstract: MB81C75-25 MB81C75
    Text: March 1990 Edition 3.0 ~ ~ — DATA S H E E T = cP FUJITSU - - MB81C75-25/-30/-35 CMOS 64K-BIT HIGH-SPEED SRAM 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory The Fujitsu MB81C75 is a 16,384 words x 4 bits static random access memory


    OCR Scan     		PDF MB81C75-25/-30/-35 64K-BIT MB81C75 Organizatio1C75-25 MB81C75-30 MB81C75-35 LCC-28C-A03 28-PAD LCC-28C-A03I MB81C75-35 MB81C75-25

    Untitled

    Abstract: No abstract text available
    Text: MB85402-30 MB85W2-40 FUJI 'S TS255-B88Y Nov. 1988 CMOS 16,384 Words x 16-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85402 is a fully decoded, CMOS Static random access memory module comprised of four MB81C75 devices mounted on a 36—pin ceramic board.


    OCR Scan     		PDF MB85402-30 MB85W2-40 TS255-B88Y 16-Bit MB85402 MB81C75 MB81C75, MB85402-30)

    Untitled

    Abstract: No abstract text available
    Text: FUJI CMOS 16,384 Words x 16-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85402 is a fully decoded, CMOS Static random access memory module comprised of four MB81C75 devices mounted on a 36-pin ceramic board. Organized as four 16K x 4 devices, the MB85402 is op­


    OCR Scan     		PDF 16-Bit MB85402 MB81C75 36-pin MB81C75, MB85402-30) MB85402-40) MB85402-30

    Untitled

    Abstract: No abstract text available
    Text: FU 31 CMOS 16,384 Words x 32-Bit HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85414 is a fully decoded, CHOS static random access memory module consists of nine MB81C75A devices mounted on a 64-pin plastic board. Organized as eight 16K x 4 devices, the MB85414 is


    OCR Scan     		PDF 32-Bit MB85414 MB81C75A 64-pin 16-bit MB81C75A, MB85414-30) MB85414-40)

    Untitled

    Abstract: No abstract text available
    Text: May 1990 FUJITSU PRODUCT PROFILE MB85414-30/-40 CMOS STATIC RAM MODULE 16384 Words x 32-Bit The Fujitsu MB85414 is a fully decoded, CMOS static random access memory module SRAM with eight MB81C75 devices mounted on a 64-pin Epoxy module. These modules incorporate a presence detect feature that


    OCR Scan     		PDF MB85414-30/-40 32-Bit MB85414 MB81C75 64-pin MZP-64P-P01 32-Bit DQ16-DQ19

    mzp e 002 42 05

    Abstract: mzp a 002 44 05 MZP a 002 47 05 MZP A 002 57 06
    Text: FUJITSU MICROELECTRONICS 31E D 374^7^2 001333=5 T H F H I May 1990 Fujitsu PRO D U CT P R O FILE • M B 85415-30/40 CMOS STATIC RAM MODULE 16384 Words x 36-Bit The Fujitsu MB85415 is a fully decoded, CMOS static random access memory module SRAM with nine MB81C75 devices mounted on a 70-pln


    OCR Scan     		PDF 36-Bit MB85415 MB81C75 70-pln 16384x 36-Bit B85415-30 B85415-40 0D13342 mzp e 002 42 05 mzp a 002 44 05 MZP a 002 47 05 MZP A 002 57 06

    Untitled

    Abstract: No abstract text available
    Text: March 1990 Édition 3.0 FUJITSU DATA SHEET MB81C 7 5 -25/-30/-3S CMOS 64K-BIT HIGH-SPEED SRAM 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory Tha Fujitsu MB81C75 is a 16,384 words x 4 bits static random aocess memory fabricated with a CMOS silicon gats process. Tha memory uses asynchronous


    OCR Scan     		PDF MB81C -25/-30/-3S 64K-BIT MB81C75 MB81C75-25 MB81C75-90 MB81C75-35 24-LEAO EMP-24P-MQ3)

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 374^2 31E D 0013335 S M ay 1990 T - I FMI C, - X } - f FUJITSU P R O D U C T PRO FILE MB85414-30/-40 CMOS STATIC RAM MODULE 16384 Words x 32-Bit The Fujitsu MB85414 is a fully decoded, CMOS static random access memory module SRAM with eight MB81C75 devices mountedon a 64-pin


    OCR Scan     		PDF MB85414-30/-40 32-Bit MB85414 MB81C75 64-pin 24--D D028-D 64-Lead MZP-64P-P01)

    Untitled

    Abstract: No abstract text available
    Text: May 1990 FUJITSU P R O D U C T P R O F IL E • MB85415-30/40 CMOS STATIC RAM MODULE 16384 Words x 36-Bit The Fujitsu MB85415 is a fully decoded, C M O S static random access memory module SRAM with nine MB81C75 devices mounted on a 70-pin Epoxy module. Additionally, these modules incorporate a presence detect


    OCR Scan     		PDF MB85415-30/40 36-Bit MB85415 MB81C75 70-pin 36-Bit MB85415-40 MB85415-30/-40

    Untitled

    Abstract: No abstract text available
    Text: im su 16K X MB85414-30 MB85414-40 32 CMOS SRAM MODULE TS260- A 8 8 Y Nov. 1988 CMOS 16,384 Words x 32-Bit HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fuji t s u MB85414 is a fully decoded, CMOS static r a ndom access memory m o dule consists of nine MB81C75A


    OCR Scan     		PDF MB85414-30 MB85414-40 TS260- 32-Bit MB85414 MB81C75A 64-pin 16-bit

    MB81C75

    Abstract: No abstract text available
    Text: May 1990 FUJITSU PRODUCT PROFILE- M B 85402-30/40 CMOS STATIC RAM MODULE 16384 Words x 16-Bit The Fujitsu MB85402 is a fully decoded, CMOS static random access \ memory modu le SRAM with four MB81C75 devices mounted on a 36-pin ceramic module. Organized as four 16K x 4 devices, the MB85402 is


    OCR Scan     		PDF 16-Bit MB85402 MB81C75 36-pin 16-Bit Supply13 B85402-40 MB85402-30 MB85402-40

    81c75

    Abstract: MB81C75 MB81C75-25
    Text: CMOS 65,536-BIT STATIC RANDOM ACCESS MEMORY FU JITSU MB81C75-25 MB81C75-35 February 191 E d itio n 2.0 1 6 K x 4 B I T 6 5 , 5 3 6 - B IT H IG H S P E E D S T A T IC R A N D O M A C C E S S M E M O R Y W IT H A U T O M A T IC P O W E R D O W N The Fujitsu M B 8 1 C 7 5 is a 16,384-words by 4-bits static random access


    OCR Scan     		PDF 536-BIT MB81C75-25 MB81C75-35 384-words 81C75 28PLC C28009S-1C MB81C75

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 374*^2 31E D 0013331 S May 1990 I FMI T"~44-'23-/V- FUJITSU PRODUCT p r o f i l e : MB85402-30/40 CMOS STATIC RAM MODULE 16384 W ords X 16-Bit The Fujitsu MB85402 is a fully decoded, CMOS static random access O memory module SRAM with four MB81C75 devices mountedon a 36-pin 1


    OCR Scan     		PDF 23-/V- MB85402-30/40 16-Bit MB85402 MB81C75 36-pin 16-Bit B85402-30 B85402-40

    ci 555

    Abstract: MCM6290-20 MCM6290-15 SR64E4 MB81C75-35 MCM6290-45 MCM6290A-25 MCM6290A-30 MCM6290C-10 MCM6290
    Text: - 6 4 K X m £ ít £ CC A TAAC max ns) TCAC max (ns) TOE max (ns) 7 CMOS f ^ / S t a t i c RAM ïf tt (1 6 3 8 4 X 4 ) « TOH min (ns) TOD max (ns) TiP min (ns) TDS miri (ni:) TDH mm (ns) TWD min (ns) TWR max (ns) V D D or V C C (V> 2 4 P I N 6 4E4 A M


    OCR Scan     		PDF 16384X4) 24PIN6 MB81C75-35 MCM6290-15 MCM6290-20 TR9C1642-35 TR9C1642-45 VT65KS4-35 VTS5KS4-45 VT65KS4-55 ci 555 SR64E4 MCM6290-45 MCM6290A-25 MCM6290A-30 MCM6290C-10 MCM6290

    IMS1630

    Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
    Text: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68


    OCR Scan     		PDF AM2147 AM2148/9 AM2167 AM2168 AM9126 AM99C68 AM99C88 AM99C89 AM67C4501 AM67C4502 IMS1630 HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


    OCR Scan     		PDF L7C167 L7C168 L7C170 L7C171 L7C172 L6116/ L6116L L7C183 CY7C183 L7C184 STATIC RAM 8464 IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram

    IDT71961L-15

    Abstract: IDT71981L-55 IDT71981L-70 IDT71981S-45 IDT71981S-55 IDT71981S-70 IDT71982L-45 IDT71982L-55 IDT7198L35 MB81C75-25
    Text: - 76 6 4 K -Í X m % CC y CMOS -f- y 7 TAAC max ns) TCAC max (ns) TOE max (ns) TOH min (ns) TOD max (ns) TWP min (ns) 20 S t a t i c RAM ( 1 6 3 8 4 x 4) m tî 1$ TDS rain (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 2 4 P I N 6 4 E 4 À


    OCR Scan     		PDF 16384X4) 4PIN64E4 IDT7198L35 IDT71961L-15 IDT71981L-55 IDT71981L-70 M5M5189AP-25 M5M5189AP-35 M5M5189BP/J-15 M5M5189BP/J-20 IDT71981S-45 IDT71981S-55 IDT71981S-70 IDT71982L-45 IDT71982L-55 MB81C75-25

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU CMOS 65536-BIT BI-CMOS MB82B75-1B STATIC RANDOM ACCESS MEMORY MB82B75-20 TS270-A893 March 1989 6 4 K - B I T 1 6 ,384 x 4 B i - C M O S H I G H SPE E D S T A T I C RANDOM ACCESS M E MO R Y WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static


    OCR Scan     		PDF 65536-BIT MB82B75-1B MB82B75-20 TS270-A893 MB82B75 384-words 30Qmil C24G62S-1C