M532 Search Results

Contextual Info: DRAM MODULE M53210804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53210804CY0/CT0-C DRAM MODULE M53210804CY0/CT0-C

KMM5322000BV

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 M5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7

KMM5321000BV-6

Contextual Info: KM M5321000BV/BVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5321000BV is a 1M bits x 32 Dynam­ ic RAM high de nsity m em ory module. The Samsung M5321000BV co n s is t of eig h t CMOS 1 M x 4 bit

Contextual Info: PRELIMINARY M5321OOOW/WG DRAM MODULES 1M x32 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tRAC KM M5321000W-7 M5321000W-8 KM M5321000W-10 70ns 20ns 130ns 80ns 20ns 150ns 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability

a512K

Abstract: KMM532512CV
Contextual Info: SAMSUNG ELECTRONICS INC b7E 1> • 7 ^ 4 1 4 2 001S04b b42 I SMGK KM M532512CV/CVG DRAM MODULES 5 1 2K x 3 2 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflAC • • • • • • • tcAc tflC M532512CV-6 60ns 15ns 110ns

"24 pin" DRAM

Contextual Info: DRAM MODULE KM M53232000B K/B KG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE KM M53232000B K/B KG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.

K4E641611C

Contextual Info: DRAM MODULE M53230804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230804CY0/CT0-C DRAM MODULE M53230804CY0/CT0-C

Contextual Info: DRAM MODULE M53230404CY0/CT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230404CY0/CT0-C DRAM MODULE M53230404CY0/CT0-C

4Mx32bits

Contextual Info: M53230400CW0/CB0 M53230410CW0/CB0 DRAM MODULE M53230400CW0/CB0 & M53230410CW0/CB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0C

Contextual Info: DRAM MODULE M53213200BE0/BJ0-C 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.1 June 1998 DRAM MODULE M53213200BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: M53210124CE2/CJ2 DRAM MODULE M53210124CE2/CJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124C is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124C consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or

Contextual Info: DRAM MODULE M53210224CW2/CB2 M53210224CW2/CB2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224C is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224C consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ

km416c1200aj

Abstract: KM416C1200A
Contextual Info: DRAM MODULE KM M5322200A W/AW G M5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung M5322200AW is a 2M bit x 32 D ynamic RAM high density m em ory module. The Samsung KM M 5322200AW consists of four CMOS

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0014=12^ 604 « S M Ù K PRELIMINARY KM M5322000W/WG DRAM MODULES 2M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung M5322000W is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung

CACP

Contextual Info: DRAM MODULE KM M53232004B K/B KG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE KM M53232004B K/B KG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS cacp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.

Contextual Info: DRAM MODULES M5321000AV/AVG 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M5321000AV- 7 • • • • • • • tRAC tcAC tRC 70ns 2 0 ns 130ns M5321000AV- 8 80ns 2 0 ns 150ns KM M5321000AV-10 1 0 0 ns 25ns 180ns

sot-223 code marking

Abstract: scr SOT-23 SCR PNPN TLM532 marking codes transistors sot-223 SCR PIN CONFIGURATION CTLS5064R-M532 MARKING CFf CTLS5064-M532 marking code 8a
Contextual Info: PRODUCT announcement Surface Mount SCR in M532 package CTLS5064-M532 CTLS5064R-M532 alternate pinout M532 Top View Sample Devices available upon request. Bottom View 3.1mm x 2.1mm x 1.0mm(H) CTLS5064-M532 CTLS5064R-M532 features • VDRM = 400V • Ideal alternative to the SOT-23 package.

Contextual Info: M5328000CS/CSG KM M53281OOCS/CSG DRAM MODULE M5328000CS/CSG & M53281 OOCS/CSG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The S am su ng K M M 53 28 0 1 0 0C S is a 8M x3 2b its RAM high de nsity . Part Identification

Contextual Info: M53230224DE2/DJ2 DRAM MODULE M53230224DE2/DJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53230224D is a 2Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M53230224D

Contextual Info: DRAM MODULE M53233200CE0/CJ0-C 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53233200CE0/CJ0-C DRAM MODULE M53233200CE0/CJ0-C

Contextual Info: M53210400CW0/CB0 M53210410CW0/CB0 DRAM MODULE M53210400CW0/CB0 & M53210410CW0/CB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0C is a 4Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M5321040(1)0C

Contextual Info: M53210800CW0/CB0 M53210810CW0/CB0 DRAM MODULE M53210800CW0/CB0 & M53210810CW0/CB0 with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321080 1 0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5321080(1)0C

Contextual Info: M53210800DW0/DB0 M53210810DW0/DB0 DRAM MODULE M53210800DW0/DB0 & M53210810DW0/DB0 with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5321080(1)0D

16Mx4bits

Contextual Info: DRAM MODULE M53211600CE0/CJ0-C 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 JUNE 1998 DRAM MODULE Revision History Version 0.0 (JUNE 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53211600CE0/CJ0-C DRAM MODULE M53211600CE0/CJ0-C