M2011 BOND PULL Search Results

IDT82V1671AJ

Abstract: EME-G700 G700LX EME-G770 Ablebond 8361 JESD22-B116 IDT7025S35JI ablestik 8390 CRM1076 JESD22-B100-b
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0601-01 Product Affected: Date Effective: Contact: Title: Phone #: Fax #: E-mail: DATE: 21-Mar-2006 MEANS OF DISTINGUISHING CHANGED DEVICES:

ics633m

Abstract: ICS9112BM-17 EME-G700 EME-G600 ICS9155C-02CW20 ICS9170-01CS08 ics5342-3 EMEG700 qmi519 ICS405M
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0607-06 DATE: 29-Sep-2006 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: PLCC, SOIC 150 mil/300 mil (Standard Package)

Sumitomo EME-G600 material

Abstract: Ablestik 8290 Ablecube EME-G600 thermal conductivity ablebond 8290 ablestik 8390 Ablebond 84-1*SR4 EME-G600 Ablebond 8390 Ablebond 84-1LMISR4
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0401-01 DATE: 1/20/2004 Product Affected: SOIC package family (see attachment for affected part #s). Date Effective: 4/20/2004 Contact: Geoffrey Cortes

honeywell mram

Contextual Info: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out

DTL RTL

Abstract: schottky transistor spice
Contextual Info: HONEYÜIELL/S S E C 3ÔE D WS 4 5 5 1 0 7 2 ÜÜOOb53 h B H 0 N 3 DEVICE ARRAYS FOR OBSOLETE PART REPLACEMENT BDA/TGA FEATURES • Exact Electrical and Physical Form, Fit and Function Replacement Capability for RTL, DTL, and TTL Circuits • Tile Architecture Extends To Dual and Quad Circuits

Contextual Info: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

883ct

Contextual Info: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through

Contextual Info: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power

HX6856

Abstract: x-ray cmos HX6856/2
Contextual Info: • I K U Military Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SGI HX6856 FEATURES OTHER RADIATION Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |nm Process • Read/Write Cycle Times < 2 5 ns (-55 to125°C ) Total Dose Hardness through 1x106 rad(S i02)

KD 2.d smd transistor

Contextual Info: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V

x-ray cmos

Contextual Info: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator

pepi cr

Contextual Info: 55E D • MS51fl?2 OOGOflOa 277 ■ H0N3 Honeywell HONEYWELL/S S E C Military Products «"p q , -23 - o S 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION OTHER • Fabricated using DESC approved QML 1.2|xm RICMOS process • Access Time of 25 ns (typical

Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02

HC6264

Contextual Info: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical

UM7410

Abstract: T9527 ATT2C15 M-2014 ATT2C08 A88al 409at q953 899 CLEAN N ETCH ATT2C12
Contextual Info: Manual October 1997 Field-Programmable Gate Arrays FPGA Qualification Manual Lucent Technologies’ Quality Policy Lucent Technologies is committed to achieving sustained business excellence by integrating quality principles and methods into all we do at every level of

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog