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    M2009 Search Results

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    M2009 Price and Stock

    Aim Dynamics M2009B

    NYLON CABLE GLAND M20 X 1.5 5-9M
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    DigiKey M2009B Bulk 600 1
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    Samtec Inc SEAM-20-09.0-L-04-2-A-K-TR

    CONN HD ARRAY PLUG 80P SMD GOLD
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    SEAM-20-09.0-L-04-2-A-K-TR Digi-Reel 113 1
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    Mouser Electronics SEAM-20-09.0-L-04-2-A-K-TR 36
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    Newark SEAM-20-09.0-L-04-2-A-K-TR Cut Tape 1
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    Samtec Inc SEAM-20-09.0-S-04-2-A-K-TR

    CONN HD ARRAY PLUG 80P SMD GOLD
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    DigiKey SEAM-20-09.0-S-04-2-A-K-TR Digi-Reel 104 1
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    Samtec Inc SEAM-20-09.0-S-06-2-A-K-TR

    CONN HD ARRAY PLUG 120P SMD GOLD
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    DigiKey SEAM-20-09.0-S-06-2-A-K-TR Cut Tape 88 1
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    Samtec Inc SEAM-20-09.0-S-08-2-A-K-TR

    CONN HD ARRAY PLUG 160P SMD GOLD
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    DigiKey SEAM-20-09.0-S-08-2-A-K-TR Digi-Reel 78 1
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    M2009 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M20-095030W1045 Harwin Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - HEADER Original PDF
    M2009DIE Mindspeed Technologies Amplifier, Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622Mbps Original PDF
    M2009DIEW Mindspeed Technologies Amplifier, Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622Mbps Original PDF

    M2009 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ics633m

    Abstract: ICS9112BM-17 EME-G700 EME-G600 ICS9155C-02CW20 ICS9170-01CS08 ics5342-3 EMEG700 qmi519 ICS405M
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0607-06 DATE: 29-Sep-2006 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: PLCC, SOIC 150 mil/300 mil (Standard Package)


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    PDF 29-Sep-2006 mil/300 29-Dec-2006 CHANGK3727S MPC962305D-1H MK2059-01SI MK3732-10S MPC962308D-1 MK2302S-01 MK3732-17S ics633m ICS9112BM-17 EME-G700 EME-G600 ICS9155C-02CW20 ICS9170-01CS08 ics5342-3 EMEG700 qmi519 ICS405M

    Mil-Std-883 Wire Bond Pull Method 2011

    Abstract: marking codes fairchild M1014C C6550 A101 A102 ultrasonic m2010 SCD 2028 10-30X Fairchild Lot codes
    Text: Quality/Reliability Fairchild Semiconductor’s Commitment to Customers The company has embraced the Total Quality Management TQM concept for continuously improving its products and services. Infant Mortality Failure Rate Fairchild Semiconductor is dedicated to providing innovative


    Original
    PDF 65-QR01 14-lead, 16-lead, 10-lead, O-100 24-lead, Mil-Std-883 Wire Bond Pull Method 2011 marking codes fairchild M1014C C6550 A101 A102 ultrasonic m2010 SCD 2028 10-30X Fairchild Lot codes

    KC800

    Abstract: KC700 KC-320 KC-700 54fct162245ateb A0910-02 6116SA120DB 5962-8866201XA 54FCT162244ATEB M1014
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 PRODUCT/PROCESS CHANGE NOTICE PCN 15-Apr-2010 MEANS OF DISTINGUISHING CHANGED DEVICES: PCN #: A0910-02 DATE: Product Affected: Cerdip 300 mil, Cerdip 600 mil Product Mark


    Original
    PDF 15-Apr-2010 A0910-02 15-Jul-2010 0/100deg 1000cys. -65/150deg 85deg KC800 KC700 KC-320 KC-700 54fct162245ateb A0910-02 6116SA120DB 5962-8866201XA 54FCT162244ATEB M1014

    M02009

    Abstract: photodiode preamplifier AGC M2009DIE M2009DIEW MC2009 photodiode die WAFER
    Text: M02009 Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622 Mbps Data Sheet 02009-DSH-001-C 6/03 Information provided in this Data Sheet is subject to change without notice. Mindspeed Technologies , Inc, Proprietary and Confidential M02009


    Original
    PDF M02009 02009-DSH-001-C M02009 photodiode preamplifier AGC M2009DIE M2009DIEW MC2009 photodiode die WAFER

    100ka fuse

    Abstract: T216976 fuses K2194 Z211783 R222678 100KA E202864 E223196 A120X101
    Text: Semiconductor A (AC)fuses Semiconductor fuses American Round Fuses Form 101 Range A120X Semiconductor Protection Fuses A120X Amp-trap Form 101 Semiconductor Protection fuses, rated 1/2A through 30A, 1200VAC are popular for use in traction drive auxiliary circuits and similar applications.


    Original
    PDF A120X A120X 1200VAC 1000VDC 1/2-30A 1200VAC, 100kA 1000VDC, 100ka fuse T216976 fuses K2194 Z211783 R222678 E202864 E223196 A120X101

    LINDNER fuses

    Abstract: e230073 LINDNER fuses neozed c2165 FR10GB69V30 FR14UC69V50 FR10GB69V12.5 M0816 Y300056 n300093c
    Text: Fuses – Fusegear Semiconductor Protection Fuses • Protistor Mapping 70 - 71 • American Round Fuses - Form 101 range 72 - 81 • Other American Round Fuses 82 • Ferrule-style Protistor fuses 83 - 87 • Protistor DIN standard fuses sizes 000-00 88 - 89


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    PDF A218707K Y211023K F215124K P219226K Z211024K MSD823I MSD10251I MSD831I MSD1031I MSD1038I LINDNER fuses e230073 LINDNER fuses neozed c2165 FR10GB69V30 FR14UC69V50 FR10GB69V12.5 M0816 Y300056 n300093c

    Untitled

    Abstract: No abstract text available
    Text: Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622 Mbps Data Sheet 02009-DSH-001-B 5/03 Information provided in this Data Sheet is Preliminary and is subject to change without notice. Mindspeed Technologies, Inc, Proprietary and Confidential


    Original
    PDF M02009 02009-DSH-001-B

    Untitled

    Abstract: No abstract text available
    Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power


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    PDF 1x10u 1x109 1x101 1x108

    Untitled

    Abstract: No abstract text available
    Text: EL2009C EL2009C 90 MHz 1 Ai her F eatu res G eneral D escrip tion • H ig h slew rate— 3000 V / is • W ide bandw idth— 125 M H z @ R L = 50H 90 M H z @ R l = 1 0 ^ • O u tp u t current— 1A continuous • O u tp u t im pedance— l i t • S h o rt circuit protected


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    PDF EL2009C EL2009 EL2009â uniqu71 M2009 159pF

    Untitled

    Abstract: No abstract text available
    Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as


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    PDF 1x106 1x1014cm HC685 IL-l-38535 1x109 1x101 36-Lead

    stm32f100c8

    Abstract: LQFP46 STM32F103RC_64 STM32F103RB LOFP48 STM32F1032F STM32F103VF STM32F103re pin LOFP-144 stm32f100cb
    Text: S T M 3 2 F £ ? ijC o rte x-M 3 S T M 3 2 F ^ 5 i j 3 2 f ô W ^ « f ê l « » X ^ ^ « 1 4 W A R M C o r t e x T“- M 3 A f t , Ä Ä -« ^ Ä « A Ä Ä & o S T M 3 2 F * ^ J * Â » Â T C o r te x -M 3 fc * ;ttJ fc :Â ÎT Ô < J * g ïa :æ , f c îS Â f l- t t t ë M f ô W


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    PDF STM32F3R STMS2F100C4 LCSP64 stm32f100c8 LQFP46 STM32F103RC_64 STM32F103RB LOFP48 STM32F1032F STM32F103VF STM32F103re pin LOFP-144 stm32f100cb

    EL2009

    Abstract: EL2009C ELLS 110 w s p 1620 transformer EL2009CT QCX0002 high speed op amp voltage booster E2130 MDP0028
    Text: hiCH PfRf QHMAMCI? ANA_jîi i NTCG«MTlî , CIPC.,t " EL2009C 90 MHz 1 A m p B u ffer .1 m plifier F e a tu r e s G en era l D e sc r ip tio n • H igh slew rate—3000 V//xs • Wide bandwidth— 125 M Hz @ R l = SOil 90 M Hz @ Rl = 10il • Output current— 1A continuous


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    PDF EL2009C EL2009CT T0-220 MDP0028 O-220 EL2009 amplifi16 3121S57 EL2009C ELLS 110 w s p 1620 transformer QCX0002 high speed op amp voltage booster E2130 MDP0028

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


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    PDF HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power


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    PDF HC6216 1x1014cnr2 1x109 1x101

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02


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    PDF HC6116--TTL 1x10u 1x109 1x101 86A-6/88

    HC6264

    Abstract: No abstract text available
    Text: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical


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    PDF HC6264 1x101 1x109 36-pin HC6264

    chip diagram of ram chip 6116

    Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD
    Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 |xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz


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    PDF HC6116â 1x10ucrrr2 1x109 1x1012 chip diagram of ram chip 6116 m2011 bond pull M2019 M2010 M2011 S102 marking RAD

    Untitled

    Abstract: No abstract text available
    Text: hiCHPrPiOHMASCEAhOliiNrEGWuiCIFCw'-S EL2009C 90 MHz 1 Amp Buffer Amplifier F e a tu r e s G en era l D e sc r ip tio n • H igh slew rate—3000 V//xs • Wide bandwidth— 125 M Hz @ R l = 50fl 90 M Hz @ R l = 10il • Output current— 1A continuous • Output impedance— i n


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    PDF EL2009C EL2009 EL2009â

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)


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    PDF HC6364 1x106 1x1014cm

    KD 2.d smd transistor

    Abstract: No abstract text available
    Text: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V


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    PDF 1x106 1x1014cm 1x109 1x101 HC6856 MIL-l-38535 36-Lead KD 2.d smd transistor

    Untitled

    Abstract: No abstract text available
    Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible


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    PDF HM3500R, HVM10000R to172 148-Pin 244-Pin M2010, M2023 M1008,

    883ct

    Abstract: No abstract text available
    Text: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through


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    PDF HC6167 1x1014cnvz 1x109 1x101 1x10-® 20-pin 883ct

    honeywell mram

    Abstract: No abstract text available
    Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out


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    PDF 0D00fl4D 1x106 1x1014N/cm2 1x101 1x106rad honeywell mram

    x-ray cmos

    Abstract: No abstract text available
    Text: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator


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    PDF 1x10s 1x101 PIN23 HX6464/1 HX6464/2 HX6464/3 x-ray cmos