M2009 Search Results

Contextual Info: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power

Contextual Info: EL2009C EL2009C 90 MHz 1 Ai her F eatu res G eneral D escrip tion • H ig h slew rate— 3000 V / is • W ide bandw idth— 125 M H z @ R L = 50H 90 M H z @ R l = 1 0 ^ • O u tp u t current— 1A continuous • O u tp u t im pedance— l i t • S h o rt circuit protected

Contextual Info: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as

stm32f100c8

Abstract: LQFP46 STM32F103RC_64 STM32F103RB LOFP48 STM32F1032F STM32F103VF STM32F103re pin LOFP-144 stm32f100cb
Contextual Info: S T M 3 2 F £ ? ijC o rte x-M 3 S T M 3 2 F ^ 5 i j 3 2 f ô W ^ « f ê l « » X ^ ^ « 1 4 W A R M C o r t e x T“- M 3 A f t , Ä Ä -« ^ Ä « A Ä Ä & o S T M 3 2 F * ^ J * Â » Â T C o r te x -M 3 fc * ;ttJ fc :Â ÎT Ô < J * g ïa :æ , f c îS Â f l- t t t ë M f ô W

EL2009

Abstract: EL2009C ELLS 110 w s p 1620 transformer EL2009CT QCX0002 high speed op amp voltage booster E2130 MDP0028
Contextual Info: hiCH PfRf QHMAMCI? ANA_jîi i NTCG«MTlî , CIPC.,t " EL2009C 90 MHz 1 A m p B u ffer .1 m plifier F e a tu r e s G en era l D e sc r ip tio n • H igh slew rate—3000 V//xs • Wide bandwidth— 125 M Hz @ R l = SOil 90 M Hz @ Rl = 10il • Output current— 1A continuous

Contextual Info: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

Contextual Info: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power

pepi cr

Contextual Info: 55E D • MS51fl?2 OOGOflOa 277 ■ H0N3 Honeywell HONEYWELL/S S E C Military Products «"p q , -23 - o S 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION OTHER • Fabricated using DESC approved QML 1.2|xm RICMOS process • Access Time of 25 ns (typical

Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02

HC6264

Contextual Info: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical

chip diagram of ram chip 6116

Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD
Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 |xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz

ics633m

Abstract: ICS9112BM-17 EME-G700 EME-G600 ICS9155C-02CW20 ICS9170-01CS08 ics5342-3 EMEG700 qmi519 ICS405M
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0607-06 DATE: 29-Sep-2006 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: PLCC, SOIC 150 mil/300 mil (Standard Package)

Contextual Info: hiCHPrPiOHMASCEAhOliiNrEGWuiCIFCw'-S EL2009C 90 MHz 1 Amp Buffer Amplifier F e a tu r e s G en era l D e sc r ip tio n • H igh slew rate—3000 V//xs • Wide bandwidth— 125 M Hz @ R l = 50fl 90 M Hz @ R l = 10il • Output current— 1A continuous • Output impedance— i n

Contextual Info: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: marking codes fairchild M1014C C6550 A101 A102 ultrasonic m2010 SCD 2028 10-30X Fairchild Lot codes
Contextual Info: Quality/Reliability Fairchild Semiconductor’s Commitment to Customers The company has embraced the Total Quality Management TQM concept for continuously improving its products and services. Infant Mortality Failure Rate Fairchild Semiconductor is dedicated to providing innovative

KC800

Abstract: KC700 KC-320 KC-700 54fct162245ateb A0910-02 6116SA120DB 5962-8866201XA 54FCT162244ATEB M1014
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 PRODUCT/PROCESS CHANGE NOTICE PCN 15-Apr-2010 MEANS OF DISTINGUISHING CHANGED DEVICES: PCN #: A0910-02 DATE: Product Affected: Cerdip 300 mil, Cerdip 600 mil Product Mark

M02009

Abstract: photodiode preamplifier AGC M2009DIE M2009DIEW MC2009 photodiode die WAFER
Contextual Info: M02009 Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622 Mbps Data Sheet 02009-DSH-001-C 6/03 Information provided in this Data Sheet is subject to change without notice. Mindspeed Technologies , Inc, Proprietary and Confidential M02009

100ka fuse

Abstract: T216976 fuses K2194 Z211783 R222678 100KA E202864 E223196 A120X101
Contextual Info: Semiconductor A (AC)fuses Semiconductor fuses American Round Fuses Form 101 Range A120X Semiconductor Protection Fuses A120X Amp-trap Form 101 Semiconductor Protection fuses, rated 1/2A through 30A, 1200VAC are popular for use in traction drive auxiliary circuits and similar applications.

Contextual Info: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible

883ct

Contextual Info: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through

honeywell mram

Contextual Info: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out

x-ray cmos

Contextual Info: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator

LINDNER fuses

Abstract: e230073 LINDNER fuses neozed c2165 FR10GB69V30 FR14UC69V50 FR10GB69V12.5 M0816 Y300056 n300093c
Contextual Info: Fuses – Fusegear Semiconductor Protection Fuses • Protistor Mapping 70 - 71 • American Round Fuses - Form 101 range 72 - 81 • Other American Round Fuses 82 • Ferrule-style Protistor fuses 83 - 87 • Protistor DIN standard fuses sizes 000-00 88 - 89

Contextual Info: Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622 Mbps Data Sheet 02009-DSH-001-B 5/03 Information provided in this Data Sheet is Preliminary and is subject to change without notice. Mindspeed Technologies, Inc, Proprietary and Confidential