KM68V1000BL Search Results

Contextual Info: KM68V1000BLI / Ll-L CMOS SRAM 128Kx8 Bit Low Voltage & Industrial Temperature Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100ns max. • Low Power Dissipation S tandby(C M O S ): 360nW (max.)L-Version

Contextual Info: ADVANCE INFORMATION KM68V1000BL/KM68V1000BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 1 0 0 ,120ns (max.) • Low Power Dissipation Standby (CMOS): 3*<W(typ.) L-Version

zd103

Abstract: 1A13 F-05 KM68V1000BLI
Contextual Info: KM68V1000BLI / Ll-L CMOS SRAM 128Kx8 Bit Low Voltage & Industrial Temperature Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C • Fast Access Time : 7 0 ,100ns max. • Low Power Dissipation Standby(CMOS) : 360fjW (max.)L-Version

Contextual Info: KM68V1000BLE / LE-L CMOS SRAM 128Kx8 Bit Low Voltage & Extended Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100ns max. • Low Power Dissipation S tand by(C M O S ): 360jiW (m ax.)L-Version

q0213

Abstract: KM68V1000BLE a14cz
Contextual Info: CMOS SRAM KM68V1000BLE / LE-L 128Kx8 Bit Low Voltage & Extended Temperature Operating SHAM FEATURES GENERAL DESCRIPTION 1Extended Temperature Range : -25 to 85°C ’ Fast Access Time : 70,100ns max. •Low Power Dissipation Standby(CMOS): 360p.W(max.)L-Version

Contextual Info: KM68V1000BL/L-L CMOS SRAM 128Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,100ns max. • Low Power Dissipation Standby(CMOS): 180|iW (m ax.) L-Version 54^W (max.)LL-Version Operating : 144mW (max.) • Single 3.0V ~ 3.6V Power Supply

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 DG17S13 STS «SMfiK ADVANCE INFORMATION KM68V1000BL/KM68V1000BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns (max.) • Low Power Dissipation

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V

Contextual Info: PRELIMINARY CMOS SRAM KM68V1 OOOBL/BL-L 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 7 0 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 3//W(Typ.) L-Version 1.5^W(Typ.) LL-Version Operating

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

KM68U1000B

Abstract: KM68V1000B KM68V1000BLG-7L
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize April 12, 1996 Final 2.0 Revise

KM68U1000BLG8L

Abstract: 32SOP
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6» «CMOS • Organization : 128K x8 • Power Supply Voltage KM68V1000B family: 3.3V« *0.3V KM68U1000B family: 3.0V- -0.3V

6 pin headphone PCB Mounted 3.5mm Stereo jack

Abstract: 5 pin PCB Mounted 3.5mm Stereo jack PCB Mounted 3.5mm Stereo plug 8 pin headphone PCB Mounted 3.5mm Stereo jack jack p2 3.5mm 11 pin PCF8574T SBF1001HL jack p4 3.5mm UM9709 3.5mm jack circuit diagram
Contextual Info: USER MANUAL HSM/UM9808 SPHERIC Demo Board Version 1.0 Philips Semiconductors SPHERIC Demo Board Version 1.0 User Manual HSM/UM9808 REVISION HISTORY Version Remarks 1.0 First release Purchase of Philips I2C components conveys a license under the Philips I 2C patent to use the

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

KM616U1000BL-L

Abstract: KM68U512ALE-L
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. Low Power SRAM Low Vcc Operation Density 256K Org. & Op Vcc 32K X 8 KM62V256CL-L (Vcc=3.0~3.6V) 32Kx8 (Vcc=2.7~3.3V) 512K 6 4K X 8 (Vcc=3.0~3.6V) 64KX8 (Vcc=2.7~3.3V) 1M Product No’ 128KX8 (Vcc=3.0~3.6V) Speed 70/100 30/10

Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

100NSL

Abstract: 32SOP
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM 128K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6 im CMOS • Organization : 128K x8 • Power Supply Voltage : KM68V1000B family : 3.3V±0.3V KM68U1000B family : 3.0V±0.3V

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

A12CZ

Abstract: KM68V1000BL
Contextual Info: K M 68V 1000B L /L -L CMOS SRAM 128Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • F a st A cce ss T im e : 7 0 ,1 0 0 n s m a x. • L ow P o w e r D issip atio n S ta n d b y(C M O S ): 1 8 0 |iW (m a x.)L -V e rsio n 5 4 ^ W (m a x .)L L -V e rs io n

Contextual Info: PRELIMINARY KM68V1OOOBL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 7 0 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 3,uW(Typ.) L-Versron 1.5^iWfTyp.) LL-Version Operating

Contextual Info: PRELIMINARY KM68V1OOOBL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 7 0 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 3//WfTyp.) L-Version 1.5^WfTyp.) LL-Version Operating