KM6466B Search Results

Contextual Info: S A M S UN G E L E C T R O N I C S INC b7E D • 7 =ib4 m H Q Q 1 7 SSQ 4 t.H I SMGK KM6466B/BL CMOS SRAM 16,384 WORD x 4 Bit CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 35mA (max.)

Contextual Info: KM6466B CMOS SRAM 16Kx4Bit With OE High Speed CM OS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15, 20,25 ns(Max.) The KM6466B is a 65,536-bit high-speed Static Random Access Memory organized as 16,384 words by • Low Power Dissipation

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

KM6466BP-15

Contextual Info: CMOS SRAM KM6466B/BL 16,384 WORD x 4 Bit CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • F a s t A c c e s s Tim e: 12, 15, 20, 25n s (m ax.) The KM6466B/BL is a 65,536-bit high-speed Static Random Access Memory organized as 16,384 words by 4 bits.

batery

Abstract: KM6466B-12 KM6466B-15 KM6466B-20 KM6466B-25
Contextual Info: CMOS SRAM KM6466B 16,384 WORD x 4 Bit CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6466B-12 : 140mA (max.) KM6466B-15 : 130mA (max.)

Contextual Info: CMOS SRAM KM6466B 16,384 WORD x 4 Bit CMOS Static RAM With OE GENERAL DESCRIPTION FEATURES • Fast Access Time: 12, 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6466B-12 :140m A (max.) KM6466B-15 :130m A (max.)

KM6466BP-15

Contextual Info: KM6466B/BL. CMOS SRAM 16,384 WORD x 4 Bit CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) 100/xA (max.) L-Version • Operating KM6466BP/J-12: 140mA (max.)

Contextual Info: CMOS SRAM KM6466B 16,384 WORD x 4 Bit CMOS Static RAM With OE GENERAL DESCRIPTION FEATURES • Fast Access Time: 12, 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6466B-12 :140mA (max.) KM6466B-15 :130mA (max.)

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

IDT71961L-15

Abstract: IDT71981L-55 IDT71981L-70 IDT71981S-45 IDT71981S-55 IDT71981S-70 IDT71982L-45 IDT71982L-55 IDT7198L35 MB81C75-25
Contextual Info: - 76 6 4 K -Í X m % CC y CMOS -f- y 7 TAAC max ns) TCAC max (ns) TOE max (ns) TOH min (ns) TOD max (ns) TWP min (ns) 20 S t a t i c RAM ( 1 6 3 8 4 x 4) m tî 1$ TDS rain (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 2 4 P I N 6 4 E 4 À

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC