KM48S8030C Search Results

Contextual Info: Preliminary SDRAM R evision H istory R evision 1 M ay 1998 - ICC2 N va lu e (10m A) is cha ng ed to 12m A. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 ELECTRONICS Preliminary

Contextual Info: Preliminary CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­

KM48S8030C

Contextual Info: KM48S8030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM

KM48S8030C

Abstract: KM48S803 PC133 1998
Contextual Info: KM48S8030C Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Oct., 1998 • PC133 first published. REV. 0 Oct. '98 Preliminary PC133 CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030C is 67,108,864 bits synchronous high data

Contextual Info: KMM374S823CTS PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 24, 1999 - Changed "Detail C" in PCB Dimension. - Changed decoupling capacitance from two 0.1uF to one 0.1uF and one 0.33 uF. Rev.0.1 Mar 1999 KMM374S823CTS PC100 Unbuffered DIMM KMM374S823CTS SDRAM DIMM

KMM466S823CT2-F0

Contextual Info: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7. REV. 2 August 1998 Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM

KMM377S823CT2-GH

Abstract: KMM377S823CT2-GL
Contextual Info: Preliminary KMM377S823CT2 SDRAM MODULE KMM377S823CT2 SDRAM DIMM Intel 1.1 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S823CT2 is a 8M bit x 72 Synchronous

KMM374S1623CT-GH

Contextual Info: KMM374S1623CT PC100 Unbuffered DIMM Revision History [ Rev. 1 ] March 23. 1999 Functional Block Diagram and Package dimension changed. Rev.1 Mar. 1999 KMM374S1623CT PC100 Unbuffered DIMM KMM374S1623CT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

KMM377S823CT3-GH

Abstract: KMM377S823CT3-GL
Contextual Info: SDRAM MODULE KMM377S823CT3 KMM377S823CT3 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S823CT3 is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: Preliminary KMM466S823CT3_144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S823CT3_144pin SDRAM SODIMM

Contextual Info: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM

Contextual Info: KMM377S823CT3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 PC100 Registered DIMM KMM377S823CT3 KMM377S823CT3 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD

KMM374S1623CT-GL

Contextual Info: KMM374S1623CT PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 23, 1999 - Changed "Detail C" in PCB Dimension. Rev.0.1 Mar. 1999 KMM374S1623CT PC100 Unbuffered DIMM KMM374S1623CT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

M374S823CT

Contextual Info: PC100 SDRAM MODULE KM M374S823CTS KMM374S823CTS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823CTS is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

KMM366S823CTS-GL

Contextual Info: KMM366S823CTS PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 24, 1999 - Changed "Detail C" in PCB Dimension. - Changed decoupling capacitance from two 0.1uF to one 0.1uF and one 0.33 uF. Rev.0.1 Mar 1999 KMM366S823CTS PC100 Unbuffered DIMM KMM366S823CTS SDRAM DIMM

Contextual Info: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTRCMCS Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM

Contextual Info: Preliminary KMM466S823CT3_144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTRCMCS Preliminary KMM466S823CT3_144pin SDRAM SODIMM

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

KMM374S823CTF-G0

Contextual Info: PC66 SDRAM MODULE KMM374S823CTF KMM374S823CTF SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823CTF is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

KMM466S823CT3-F0

Contextual Info: KMM466S823CT3 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7. REV. 2 August 1998 Preliminary 144pin SDRAM SODIMM KMM466S823CT3 KMM466S823CT3 SDRAM SODIMM

KMM366S823CTF-G0

Abstract: KMM366S823CTF
Contextual Info: PC66 SDRAM MODULE KMM366S823CTF KMM366S823CTF SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823CTF is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KMM366S823CTS

Abstract: KMM366S823CTS-GH KMM366S823CTS-G8 KMM366S823CTS-GL
Contextual Info: KMM366S823CTS PC100 SDRAM MODULE KMM366S823CTS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823CTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

nk401

Abstract: AM29V800 S3C3410 S3C3410X JEENI ARM7 pin discription and programming ka78r33 set date pSOS pROBE SMDK40100 SVC32
Contextual Info: 40-S3-C3410X-062001 APPLICATION NOTE S3C3410X 16-Bit CMOS Microcontrollers Revision 0 S3C3410X RISC MICROPROCESSOR 1 ABOUT SMDK40100 BOARD ABOUT SMDK40100 BOARD SYSTEM OVERVIEW SMDK40100 Samsung MCU Development Kit for S3C3410X is a platform that is suitable for code development

Contextual Info: PC100 SDRAM MODULE KM M374S823CTS KMM374S823CTS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823CTS is a 8M bit x 72 Synchronous • Performance range