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    KM48S Price and Stock

    Samsung Semiconductor KM48S16030AFTH

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    Bristol Electronics KM48S16030AFTH 36
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    Quest Components KM48S16030AFTH 28
    • 1 $22.1445
    • 10 $19.684
    • 100 $18.2077
    • 1000 $18.2077
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    Samsung Electro-Mechanics KM48S2020CT-G10

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    Bristol Electronics KM48S2020CT-G10 21 1
    • 1 $8.96
    • 10 $4.48
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    Samsung Semiconductor KM48S8030CT-G10

    IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components KM48S8030CT-G10 128
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    Samsung Semiconductor KM48S8030BT-GH

    IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components KM48S8030BT-GH 40
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    SAMSUNG SEMICONDUCTOR KM48S2020CT-G10

    2MX8 SYNCHRONOUS DRAM, 7NS, PDSO44
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    Quest Components KM48S2020CT-G10 18
    • 1 $7.95
    • 10 $3.975
    • 100 $3.975
    • 1000 $3.975
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    KM48S Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM48S16030 Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030A Samsung Electronics 128Mbit SDRAM 4M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM48S16030AT-G/F10 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM. Max freq. 66 MHz(CL=2&3). Interface LVTTL Original PDF
    KM48S16030AT-G/F8 Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030AT-G/FA Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030AT-G/FH Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030AT-G/FL Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030B Samsung Electronics 128Mbit SDRAM 4M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM48S16030BT-G/F10 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz(CL=2&3). Original PDF
    KM48S16030BT-GF10 Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030BT-G/F8 Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030BT-G/FA Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030BT-G/FH Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030BT-G/FL Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030BT-GL Samsung Electronics KM48S16030BT 4MB x 8-Bit x 4Banks Synchronous DRAM Organization = 16Mx8 Bank/ Interface = 4B/LVTTL Refresh = 4K/64ms Speed = 75,80,1H,1L,10 Package = 54TSOP2 Power = C,l Production Status = Eol Comments = - Original PDF
    KM48S16030T-G/F10 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. Original PDF
    KM48S16030T-G/F8 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz. Original PDF
    KM48S16030T-G/FH Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. Original PDF
    KM48S16030T-G/FL Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. Original PDF
    KM48S32230AT-F10 Samsung Electronics 8M x 8 Bit x 4 Banks Synchronous DRAM Scan PDF

    KM48S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: shrink-TSOP KM48S16030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 shrink-TSOP


    Original     		PDF KM48S16030BN 128Mb A10/AP

    Untitled

    Abstract: No abstract text available
    Text: KM48S8020B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM48S8020B PC100

    54PIN

    Abstract: KM48S16030
    Text: Preliminary CMOS SDRAM KM48S16030 4M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S16030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF KM48S16030 KM48S16030 A10/AP 54PIN

    KM48S8030BT

    Abstract: No abstract text available
    Text: KM48S8030B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM48S8030B PC100 KM48S8030BT

    KM48S8030D

    Abstract: No abstract text available
    Text: KM48S8030D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May 1999 KM48S8030D CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM48S8030D 64Mbit A10/AP KM48S8030D

    KM48S16030A

    Abstract: No abstract text available
    Text: KM48S16030A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM48S16030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM48S16030A 128Mbit A10/AP KM48S16030A

    KMM390S3320BT1-GA

    Abstract: 16MX8 32MX72 KMM390S1723BT1-GA samsung memory
    Text: SERIAL PRESENCE DETECT PC133 Registered DIMM PC133 Registered SDRAM DIMM 168pin Type SPD Specification REV. 0 Aug. 1999 REV. 0 Aug. 1999 SERIAL PRESENCE DETECT PC133 Registered DIMM KMM390S1723BT1-GA •Organization : 16MX72 •Composition : 16MX8 * 9ea •Used component part # : KM48S16030BT-GA


    Original     		PDF PC133 168pin) KMM390S1723BT1-GA 16MX72 16MX8 KM48S16030BT-GA 4K/64ms 128bytes KMM390S3320BT1-GA 16MX8 32MX72 KMM390S1723BT1-GA samsung memory

    Untitled

    Abstract: No abstract text available
    Text: KM48S32230A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 JUN 1999 KM48S32230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999


    Original     		PDF KM48S32230A 256Mbit A10/AP

    16MX4

    Abstract: KMM390S823DT1-GA samsung note
    Text: SERIAL PRESENCE DETECT PC133 Registered DIMM Registered SDRAM PC133 DIMM 168pin SPD Specification REV. 1 July. 1999 REV. 1 July. '99 SERIAL PRESENCE DETECT PC133 Registered DIMM KMM390S823DT1-GA •Organization : 8MX72 •Composition : 8MX8 *9 •Used component part # : KM48S8030DT-GA


    Original     		PDF PC133 168pin) KMM390S823DT1-GA 8MX72 KM48S8030DT-GA 4K/64ms 128bytes 256bytes 16MX4 KMM390S823DT1-GA samsung note

    km48s2020ct

    Abstract: KM48S2020CT-G
    Text: KM48S2020C CMOS SDRAM Revision History Revision .4 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM48S2020C PC100 km48s2020ct KM48S2020CT-G

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SDRAM R evision H istory R evision 1 M ay 1998 - ICC2 N va lu e (10m A) is cha ng ed to 12m A. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 ELECTRONICS Preliminary


    OCR Scan     		PDF KM48S8030C_ KM48S8030C KM48S8030C 10/AP

    KM48S8030BT

    Abstract: No abstract text available
    Text: KM48S8030B CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		PDF KM48S8030B KM48S8030B KM48S8030BT

    5.6V

    Abstract: km-48 S8020
    Text: KM48S8020B CMOS SDRAM 4M x 8Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs CAS latency 2 & 3


    OCR Scan     		PDF KM48S8020B KM48S8020B 10/AP 5.6V km-48 S8020

    48S160

    Abstract: 48S1603
    Text: Preliminary KM48S16030 CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address The KM48S16030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,


    OCR Scan     		PDF KM48S16030 KM48S16030 48S160 48S1603

    Untitled

    Abstract: No abstract text available
    Text: KM48S32230A CMOS SDRAM 256Mbit SDRAM 8M X 8bit X 4 Banks Synchronous DRAM LVTTL Revision 0.2 January 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.2 Jan. '99 KM48S32230A CMOS SDRAM R evision H isto ry


    OCR Scan     		PDF KM48S32230A 256Mbit 10/AP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM48S32230A 8M X 8Bit X 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S32230A is 268,435,456 bits synchronous high data • LVTTL compatible with multiplexed address rate Dynamic RAM organized as 8 x 8,392,608 words by 8 bits,


    OCR Scan     		PDF KM48S32230A KM48S32230A

    A9281

    Abstract: 1993 SDRAM ra2t 1993 SDRAM samsung KM48SV2000
    Text: PRELIMINARY CMOS SDRAM KM48SV2000 2M X 8 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEATURES The KM48SV2000 is a 16,777,216 bit synch­ ronous high data rate Dynamic RAM organized as 2,097,152 words by 8bits, fabricated with SAMSUNG'S high performance CMOS technology.


    OCR Scan     		PDF KM48SV2000 KM48SV2000 17SMAX -16ELECTRONICS A9281 1993 SDRAM ra2t 1993 SDRAM samsung

    KM48S8030AT

    Abstract: M14e
    Text: KM48S8030A CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION . • •• rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­ . . - JEDEC standard 3.3V power supply


    OCR Scan     		PDF KM48S8030A KM48S8030A KM48S8030AT M14e

    Untitled

    Abstract: No abstract text available
    Text: KM48S8020B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC param eter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    OCR Scan     		PDF KM48S8020B PC100

    KM48S8020

    Abstract: a9333
    Text: KM48S8020A CMOS SDRAM 4M x 8Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION JEDEC standard 3.3V power supply •■ LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs - CAS Latency 2 & 3 Burst Length (1, 2, 4, 8 & full page)


    OCR Scan     		PDF KM48S8020A KM48S8020A 7TL4142 KM48S8020 a9333

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM48S32230A 8M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S32230A is 268,435,456 bits synchronous high data • LVTTL compatible with multiplexed address rate Dynamic RAM organized as 8 x 8,392,608 words by 8 bits,


    OCR Scan     		PDF KM48S32230A KM48S32230A 10/AP

    RA12

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM48S32230A 8M X 8 Bit X 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • J E D E C s ta n d a rd 3 .3 V p o w e r s u p p ly T h e K M 4 8 S 3 2 2 3 0 A is 2 6 8 ,4 3 5 ,4 5 6 b its s y n c h ro n o u s high d a ta • L V T T L c o m p a tib le w ith m u ltip le x e d a d d re s s


    OCR Scan     		PDF KM48S32230A A10/AP RA12

    54PIN

    Abstract: RA12
    Text: Preliminary CMOS SDRAM KM48S8020B Revision History Revision ,3 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. 1 ELECTRONICS This Material Copyrighted By Its Respective Manufacturer


    OCR Scan     		PDF KM48S8020B A10/AP 54PIN RA12

    Untitled

    Abstract: No abstract text available
    Text: KM48S16030B CMOS SDRAM 128Mbit SDRAM 4M X 8Bit X 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 ELECTRONICS KM48S16030B CMOS SDRAM R evision H istory


    OCR Scan     		PDF KM48S16030B 128Mbit 10/AP