KM48S16030A Search Results

KM48S16030A

Contextual Info: KM48S16030A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM48S16030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999

Contextual Info: KM48S16030A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May. 1999 KM48S16030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999

Contextual Info: PC100 Unbuffered DIMM KMM366S3323AT Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

KMM466S1723AT3-F0

Abstract: kmm466s1723
Contextual Info: PC66 SODIMM KMM466S1723AT3 Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

KMM466S1723AT2

Contextual Info: KMM466S1723AT2 PC66 SODIMM Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: PC100 Unbuffered DIMM KMM366S1723ATS Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

KMM366S924BTS

Abstract: 64Mb samsung SDRAM pc133 sdram pc133 SDRAM DIMM KMM366S1723ATS-GA KMM374S823DTS-GA KM416S8030BT
Contextual Info: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT Unbuffered SDRAM DIMM 168pin PC133 4Layer SPD Specification REV. 0.2 Nov. 1999 REV. 0.2 Nov. 1999 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT KMM366S823DTS-GA ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü Organization : 8Mx64

Contextual Info: KMM374S1723ATS PC100 Unbuffered DIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

"simm 72 pin"

Abstract: simm-72 timing simm 72 pin simm 72pin HSD8M32M4V HSD32M32M4V
Contextual Info: HANBit HSD8M32M4V Synchronous DRAM Module 32Mbyte 8M x 32-Bit 72pin-SIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V Part No. HSD8M32M4V GENERAL DESCRIPTION The HSD8M32M4V is a 8M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of

CDC2509

Contextual Info: PC100 Registered DIMM KMM377S1723AT3 Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: PC100 Unbuffered DIMM KMM374S3323AT Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

KM416S8030BT

Abstract: sAMSUNG PC100-322-620
Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered SDRAM DIMM 168pin 6 Layer SPD Specification Rev. 0.0 November 1999 Rev. 0.0 Nov. 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM • Revision History [Revision 0.0] November 18, 1999 Merged PC100 SDRAM 6 Layer Unbuffered DIMMs based 64SD D-die, 128SD M/A/B-die, 256SD A-die.

KMM374S1723ATS-GA

Contextual Info: KMM374S1723ATS PC133 Unbuffered DIMM Revision History Revision 0.0 May, 1999 • PC133 first published. REV. 0 May 1999 KMM374S1723ATS PC133 Unbuffered DIMM KMM374S1723ATS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

KMM374S3323AT-GA

Contextual Info: KMM374S3323AT PC133 Unbuffered DIMM Revision History Revision 0.0 May, 1999 • PC133 first published. Revision 0.1 (June, 1999) - Changed PCB Dimensions in PACKAGE DIMENSIONS REV. 0.1 June 1999 KMM374S3323AT PC133 Unbuffered DIMM KMM374S3323AT SDRAM DIMM

HSD16M32M4V

Abstract: HSD32M32M4V HSD8M32M4V simm72
Contextual Info: HANBit HSD16M32M4V Synchronous DRAM Module 64Mbyte 16M x 32-Bit 72-Pin SIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V Part No. HSD16M32M4V GENERAL DESCRIPTION The HSD16M32M4V is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists

CDC2509

Contextual Info: PC100 Registered DIMM KMM377S3323AT Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.