KM416S4030BT
Abstract: KM416S4030B
Text: KM416S4030B CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.
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KM416S4030B
PC100
A10/AP
KM416S4030BT
KM416S4030B
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KM416S4030BT
Abstract: KM416S4030B
Text: KM416S4030B CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.
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KM416S4030B
PC100
KM416S4030BT
KM416S4030B
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sekisui 5760
Abstract: sis950 SiS chipset 486 SEAGATE st51080n Bt848KPF KSV884T4A1A-07 lad1 5vdc SiS chipset SiS301 kingmax usb flash drive
Text: SiS540 Super 7 2D/3D Ultra-AGPTM Single Chipset Content Figure .vi Table. vii
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SiS540
sekisui 5760
sis950
SiS chipset 486
SEAGATE st51080n
Bt848KPF
KSV884T4A1A-07
lad1 5vdc
SiS chipset
SiS301
kingmax usb flash drive
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KM48S8030BT-GL
Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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PC100
KM48S8030BT-GL
nn5264805tt-b60
KM48S2020CT-GL
0364804CT3B-260
d4564163g5
nt56v1680a0t
D4564841g5
81F641642B-103FN
M5M4V16S30DTP
Siemens 9832
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KMM466S824CT2-F0
Abstract: KM416S4030BT
Text: Preliminary 144pin SDRAM SODIMM KMM466S824CT2 KMM466S824CT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S824CT2 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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144pin
KMM466S824CT2
KMM466S824CT2
8Mx64
4Mx16,
400mil
144-pin
KMM466S824CT2-F0
KM416S4030BT
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KM416S4030Bt
Abstract: KMM366S424CTL KMM366S424CTL-G0
Text: Preliminary PC66 SDRAM MODULE KMM366S424CTL KMM366S424CTL SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S424CTL
KMM366S424CTL
4Mx64
4Mx16,
400mil
168-pin
KM416S4030Bt
KMM366S424CTL-G0
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KM416S4030BT-F10
Abstract: KMM466S824BT2
Text: KMM466S824BT2 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.
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KMM466S824BT2
144pin
66MHz
KM416S4030BT-F10
KMM466S824BT2
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KMM366S424BT-GL
Abstract: CADD-30
Text: KMM366S424BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.
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KMM366S424BT
PC100
100MHz
100MHz
KMM366S424BT-GL
CADD-30
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Genesis Gmz1
Abstract: gmz2 LCD toshiba projector FSD21 gmz1 lcd 2x16 green MARKING toshiba 133 mitsubishi fsd5 TDA8752 IBM0316169
Text: Data Sheet gmFC1 DAT-0005-D November 1998 Genesis Microchip Inc. 200 Town Centre Blvd, Suite 400, Markham, ON Canada L3R 8G5 Tel: 905 470-2742 Fax: (905) 470-9022 2071 Landings Drive, Mountain View, CA, USA 94043 Tel: (650) 428-4277 Fax (650) 428-4288 www.genesis-video.com / info@genesis-microchip.on.ca
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DAT-0005-D
DAT-0005
MSD-0025-A
MSD0038
E04-0005,
E05-0005
Genesis Gmz1
gmz2
LCD toshiba projector
FSD21
gmz1
lcd 2x16 green
MARKING toshiba 133
mitsubishi fsd5
TDA8752
IBM0316169
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KM416S4030BT-G10
Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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PC100
KM416S4030BT-G10
KM48S2020CT-GL
81F641642B-103FN
d4564163g5
S9745-M06
M5M4V16S30DTP
gm72v661641ct7j
D4564163G5-A10-9JF
D4516821AG5
D4516821
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KMM366S824BT-G8
Abstract: KMM366S824BT-GH KMM366S824BT-GL
Text: KMM366S824BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.
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KMM366S824BT
PC100
100MHz
100MHz
KMM366S824BT-G8
KMM366S824BT-GH
KMM366S824BT-GL
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KM416S4030BT-G10
Abstract: KMM366S424BTL-G0 KMM366S424BTL
Text: KMM366S424BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.
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KMM366S424BTL
200mV.
66MHz
KM416S4030BT-G10
KMM366S424BTL-G0
KMM366S424BTL
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Untitled
Abstract: No abstract text available
Text: KM416S4030B Preliminary CMOS SDRAM Revision History Revision ,l November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. REV. 1 Nov. '97 ELECTRONICS
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KM416S4030B
16Bit
416S4030B
10/AP
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KM416S4030BT
Abstract: KM416S4030B KM416S4030
Text: Preliminary CMOS SDRAM KM416S4030B Revision History Revision .1 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. - 1 - ELECTRONICS This Material Copyrighted By Its Respective Manufacturer
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KM416S4030B
16Bit
A10/AP
KM416S4030BT
KM416S4030B
KM416S4030
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Untitled
Abstract: No abstract text available
Text: KM416S4030B CMOS SDRAM 1M x 16Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’S high performance CMOS
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KM416S4030B
16Bitx
KM416S4030B
10/AP
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Untitled
Abstract: No abstract text available
Text: KMM466S424BT 14 4pm S D R A M S O D I M M Revi si on Hi story Revision .3 March 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : -In p u t leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.
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KMM466S424BT
44pin
4Mx16
KM416S4030BT
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Untitled
Abstract: No abstract text available
Text: 144pin SDRAM SODIMM KMM466S824BT2 R e v is io n H is to ry Revision .2 March 1998 Som e Param eter values & C hracteristics of com p, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1uA. Input leakage C urrents (I/O) : ± 5uA to ± 1,5uA.
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KMM466S824BT2
144pin
4Mx16
KM416S4030BT
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Untitled
Abstract: No abstract text available
Text: KMM366S424BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1,4V ± 200 mV.
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KMM366S424BT
PC100
54Max)
4Mx16
KM416S4030BT
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Untitled
Abstract: No abstract text available
Text: KMM466S424BT 144pin SDRAM SODIMM Revision History Revision .3 March 1998 Some Parameter values & Chracteristies of comp, level are changed as below : - Input leakage Currents (Inputs) : + 5uA to + 1uA. Input leakage Currents (I/O) : + 5 u A to + 1.5uA. - Cin to be measured at V DD = 3.3V, TA = 23 °C, f = 1 MHz, V REF = 1 .4V + 200 mV.
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KMM466S424BT
144pin
4Mx16
KM416S4030BT
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KMM366S424BT-GL
Abstract: No abstract text available
Text: KMM366S424BT PC100 SDRAM MODULE KMM366S424BT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424BT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S424BT
KMM366S424BT
PC100
4Mx64
4Mx16,
400mil
168-pin
KMM366S424BT-GL
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Untitled
Abstract: No abstract text available
Text: KMM366S824BT PC100 SDRAM MODULE KMM366S824BT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824BT is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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PDF
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KMM366S824BT
KMM366S824BT
PC100
8Mx64
4Mx16,
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM366S824BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. I n(lnputs) : ± 5uA to ± 1 uA, I il (DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V dd = 3.3V, T a = 23°C , f = 1 MHz, V
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KMM366S824BT
PC100
4Mx16
KM416S4030BT
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Untitled
Abstract: No abstract text available
Text: 144pin SDRAM SODIMM KMM466S424BT Revision History Revision .3 March 1998 Som e Param eter values & C hracteristics of com p, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1uA. Input leakage C urrents (I/O) : ± 5uA to ± 1,5uA.
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KMM466S424BT
144pin
4Mx16
KM416S4030BT
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km48s2020ct
Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
KM44S16020BT
KM48S8020BT
KM416S4020BT
KM416S4021BT
KM44S160308T
KM48S8030BT
S823B
4MX16
54-PIN
u108h
KM48S2020
44s16030
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