IBM0316169 Search Results

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mb S ynchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 : -12 : CL=3 ; CL=3 Units ; MHz : fcK Clock Frequency : io o I 83 tcK Clock Cycle ; 10 Uc Clock Access Tim e Ì • Automatic and Controlled Precharge Command

Contextual Info: IBM0316409C IBM0316809C IBM0316169C IBM03164B9C Prelim inary 16M b S y n c h r o n o u s D R A M -D ie Revision E Features • M ultiple Burst Read w ith Single W rite O ption • High Perform ance: CL=3 : CL=2 / 3 ; CL=3 i: c. 3 • Units ; • A utom atic and C ontrolled Precharge C om m and

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Features • High Performance: fcK Clock Frequency • Multiple Burst Read with Single W rite Option -10 CL-3 -12 CL-3 Units ! • Automatic and Controlled Precharge Command 100 83 MHz ! • Data Mask for Read/Write control x4,x8

e24526

Abstract: IBM0316169C IBM0316809C
Contextual Info: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM13Q4739CC 4M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8- Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM

E24526

Abstract: IBM0316169C IBM0316809C
Contextual Info: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM13Q8739CC 8M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8-Byte Dual In-Line Memory Module • 8M x 72 Synchronous DRAM DIMM

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16M b S yn c h ro n o u s D RAM Features • High Performance: I • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command I cl% j C L ^ S i Units j 100 83 ! MHz ; • Data Mask for Read/W rite control x4,x8

IBM0316169C

Abstract: IBM0316809C ibm t20
Contextual Info: . IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Preliminary Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8

UC07H

Abstract: fccd 111a
Contextual Info: IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option I I -10 CL=3 fc K ! Clock Frequency 1 1 0 0 tcK ! Clock Cycle I 10 tftc ! Clock Access Time I 8 i -12 CL=3 Units • Automatic and Controlled Precharge Command

5285-04

Contextual Info: I =¥= =•= IBM0316409C IBM0316809C IBM0316169C IBM03164B9C P relim inary -80,-322 16M b S yn ch ro n o u s D R A M -D ie R evision D Features • Multiple Burst Read with Single Write Option • High Performance: i I fcK ! Clock Frequency -80 CL=3

IBM0316809CT3D80

Abstract: IBM0316169C IBM0316809C
Contextual Info: Discontinued 12/98 - last order; 9/99 last ship . IBM0316409C IBM0316809C IBM0316169C IBM03164B9C 16Mb Synchronous DRAM-Die Revision D Features • Multiple Burst Read with Single Write Option • High Performance: -80 CL=3 -360 CL=3 -10 CL=3 Units 125 100

IT2205

Abstract: IBM0316809CT3-10 g618ac
Contextual Info: IBM0316409CIBM0316809C IBM0316169C 16Mbit S yn ch ro n o u s DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91

Contextual Info: IBM0316169C Advance 1M x 16 Synchronous DRAM Features Programmable Burst Lengths: 1,2,4,8,full-page • High Performance: CAS latency = 3 -10 Clock Frequency' -11 -12 -13 < 100MHz <91 MHz <83MHz <77 MHz Clock Cycle 10ns 11ns 12ns 13ns Access Time from the Clock

IBM0316809C

Abstract: ibm T22 IBM0316169C cmos dram T20 96 diode
Contextual Info: . IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91 83 77

2TNC

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command 100 91 83 77 MHz • Data Mask for Read/Write control x4,x8

031-6169

Contextual Info: I = = = ¥ = IB M 0 3 1 6 4 y 9 z IB M 0 3 1 6 8 y 9 z IB M 0 3 1 6 1 6 9 z - y=0,B z=C,P,D,Q Preliminary

Contextual Info: Table of Contents Alphanumeric In d ex . DRAM Numbering . Quality and Reliability. Part Number Oranization . 5 . 7 . 9 Features

Contextual Info: IB M 0 3 1 6 4 y 9 z IB M 0 3 1 6 8 y 9 z IB M 0 3 1 6 1 6 9 z y=0,B z=C,P,D,Q 16Mb Synchronous DRAM P relim inary Features • M ultiple Burst Read w ith Single W rite O ption • A utom atic and C ontrolled P recharge C om m and • High Perform ance: -70

Contextual Info: SIEMENS ICs for Communications ATM Buffer Manager ABM PXB 4330 E Version 1.1 Preliminary Data Sheet 08.98 DS 2 PXB 4330 E Revision History: Current Version: 08.98 P revious Version: P relim inary Data S heet 05.98 DS1 Page in previous V ersion Page (in current

Contextual Info: IB M 0 3 1 6 4 y 9 z IB M 0 3 1 6 8 y 9 z IB M 0 3 1 6 1 6 9 z y=0,B z=C,P,D,Q 16Mb Synchronous DRAM P relim inary Features • M ultiple Burst Read w ith Single W rite O ption • A utom atic and C ontrolled P recharge C om m and • High Perform ance: -70

PXB 4325

Abstract: ram 6164 IC Ensemble AA23 Hyb 4116 motorola analog ICs vol.2 P-BGA-352-1 epd driver ic ABM atm buffer manager PXB4325E
Contextual Info: ICs for Communications ATM Buffer Manager ABM PXB 4330 Version 1.1 Data Sheet 09.99 DS 1 PXB 4330 Data Sheet Revision History: Current Version: 09.99 Previous Version: Preliminary Data Sheet 08.98 V 1.1 Page Page (in previous (in current Version) Version)

64mb edo dram simm

Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
Contextual Info: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s

marking w25 SMD

Abstract: w6856 siemens k24 siemens k25 marking g23 SMD MARKING CODE SMD JW smd marking K23 SMD MARKING CODE abr SMD MARKING CODE g23 smd marking g24
Contextual Info: S IE M E N S ICs for Communications ATM Buffer Manager ABM PXB 4330 E Version 1.1 Preliminary Data Sheet 08.98 DS 2 This Material Copyrighted By Its Respective Manufacturer PXB 4330 E Revision History: Current Version: 08.98 P revious V ersion: P relim inary Data S heet 05.98 DS1

Genesis Gmz1

Abstract: gmz2 LCD toshiba projector FSD21 gmz1 lcd 2x16 green MARKING toshiba 133 mitsubishi fsd5 TDA8752 IBM0316169
Contextual Info: Data Sheet gmFC1 DAT-0005-D November 1998 Genesis Microchip Inc. 200 Town Centre Blvd, Suite 400, Markham, ON Canada L3R 8G5 Tel: 905 470-2742 Fax: (905) 470-9022 2071 Landings Drive, Mountain View, CA, USA 94043 Tel: (650) 428-4277 Fax (650) 428-4288 www.genesis-video.com / info@genesis-microchip.on.ca