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    K3473 Price and Stock

    Vishay Intertechnologies CRCW0402330RFKED

    Thick Film Resistors - SMD 1/16watt 330ohms 1%
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    TTI CRCW0402330RFKED Reel 4,070,000 10,000
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    Vishay Intertechnologies CRCW121075K0FKEA

    Thick Film Resistors - SMD 1/2watt 75Kohms 1%
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    TTI CRCW121075K0FKEA Reel 5,000
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    Dialight 5640100227F

    LED Circuit Board Indicators CBI 3MM TRE LEVEL
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    TTI 5640100227F Bulk 460
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    K3473 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3473

    Abstract: TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65

    TOSHIBA K3473

    Abstract: k3473 2SK3473 K347 SC-65
    Text: K3473 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3473 スイッチングレギュレータDC−DC コンバータ用 モータドライブ用 単位: mm : RDS (ON) = 1.3Ω (標準) オン抵抗が低い。 : |Yfs| = 6.5S (標準)


    Original     		PDF 2SK3473 SC-65 2-16C1B 20070701-JA TOSHIBA K3473 k3473 2SK3473 K347 SC-65

    Untitled

    Abstract: No abstract text available
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3473

    TOSHIBA K3473

    Abstract: toshiba transistor k3473 transistor k3473 K3473
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK3473 TOSHIBA K3473 toshiba transistor k3473 transistor k3473 K3473

    k3473

    Abstract: TOSHIBA K3473 transistor k3473 2SK3473 SC-65
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 k3473 TOSHIBA K3473 transistor k3473 2SK3473 SC-65

    K3473

    Abstract: TOSHIBA K3473 toshiba transistor k3473 2SK3473 SC-65 transistor k3473
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 toshiba transistor k3473 2SK3473 SC-65 transistor k3473

    k3473

    Abstract: K347 TOSHIBA K3473 2SK3473 SC-65 2SK347 transistor k3473
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK3473 150lled k3473 K347 TOSHIBA K3473 2SK3473 SC-65 2SK347 transistor k3473

    K3473

    Abstract: TOSHIBA K3473 2SK3473
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 2SK3473

    TOSHIBA K3473

    Abstract: No abstract text available
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK3473 TOSHIBA K3473