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    K347 Search Results

    K347 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SK347 Coilcraft Inc Super Kit, 0603LS chip inductors, RoHS Visit Coilcraft Inc
    2SK3479-Z-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 83A 11Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation
    2SK3479-ZJ-AZ Renesas Electronics Corporation Switching N Channel MOSFET Visit Renesas Electronics Corporation
    2SK3479-S-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 83A 11Mohm Mp-25/To-220Ab Visit Renesas Electronics Corporation
    2SK3479-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 83A 11Mohm Mp-25/To-220Ab Visit Renesas Electronics Corporation
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    K347 Price and Stock

    Toshiba America Electronic Components SSM3K347R,LF

    MOSFET N-CH 38V 2A SOT23F
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    DigiKey SSM3K347R,LF Cut Tape 10,931 1
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    SSM3K347R,LF Digi-Reel 10,931 1
    • 1 $0.45
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    SSM3K347R,LF Reel 6,000 3,000
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    Mouser Electronics SSM3K347R,LF 2,880
    • 1 $0.34
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    • 100 $0.161
    • 1000 $0.11
    • 10000 $0.07
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    KEMET Corporation PHE450KK3470JR05

    CAP FILM 470PF 5% 400VDC RADIAL
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    DigiKey PHE450KK3470JR05 Box 3,639 1
    • 1 $0.79
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    Mouser Electronics PHE450KK3470JR05 682
    • 1 $0.63
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    • 100 $0.304
    • 1000 $0.213
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    KEMET Corporation PHE450PK3470JR05

    CAP FILM 470PF 5% 1KVDC RADIAL
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    DigiKey PHE450PK3470JR05 Bag 1,008 1
    • 1 $0.79
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    Mouser Electronics PHE450PK3470JR05 4,032
    • 1 $0.64
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    Avnet Abacus PHE450PK3470JR05 31 Weeks 3,000
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    KEMET Corporation PHE450MK3470JR05

    CAP FILM 470PF 5% 630VDC RADIAL
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    DigiKey PHE450MK3470JR05 Bulk 470 1
    • 1 $0.98
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    Mouser Electronics PHE450MK3470JR05 3,442
    • 1 $0.84
    • 10 $0.594
    • 100 $0.407
    • 1000 $0.286
    • 10000 $0.237
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    Amphenol Communications Solutions HM2DK3478PLF

    HM2DK3478PLF MPAC DISCR KEY PLUG
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    DigiKey HM2DK3478PLF Bulk 1,000
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    Newark HM2DK3478PLF Bulk 1,900 250
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    Find more K347 price and stock on Findchips.com

    K347 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3473

    Abstract: TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65

    k3472

    Abstract: 2SK3472
    Text: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 k3472 2SK3472

    k3472

    Abstract: 2SK3472 MJ103
    Text: K3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K3472 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 k3472 2SK3472 MJ103

    transistor m1104

    Abstract: transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182
    Text: Contents List of Ordering Codes 5 8 Multilayer Chip Capacitors 11 Multilayer Leaded Capacitors 57 General Technical Information Mounting Instructions for Chip Capacitors 75 88 Measuring and Test Conditions Quality Assurance 99 103 Taping and Packing 111 Symbols and Terms


    Original     		PDF filt05 transistor m1104 transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182

    transistor k2333

    Abstract: k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392
    Text: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression


    Original     		PDF KKE0272-V 30-K5273-K01 -K5333-K01 -K5393-K01 -K5473-K01 B37931-K0472-K01 C/C25 transistor k2333 k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392

    TOSHIBA K3473

    Abstract: k3473 2SK3473 K347 SC-65
    Text: K3473 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3473 スイッチングレギュレータDC−DC コンバータ用 モータドライブ用 単位: mm : RDS (ON) = 1.3Ω (標準) オン抵抗が低い。 : |Yfs| = 6.5S (標準)


    Original     		PDF 2SK3473 SC-65 2-16C1B 20070701-JA TOSHIBA K3473 k3473 2SK3473 K347 SC-65

    Untitled

    Abstract: No abstract text available
    Text: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 to150

    Untitled

    Abstract: No abstract text available
    Text: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 to150

    Untitled

    Abstract: No abstract text available
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3473

    K3472

    Abstract: 2SK3472
    Text: K3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K3472 Switching Regulator Applications Unit: mm High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF 2SK3472 K3472 2SK3472

    TOSHIBA K3473

    Abstract: toshiba transistor k3473 transistor k3473 K3473
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK3473 TOSHIBA K3473 toshiba transistor k3473 transistor k3473 K3473

    k3473

    Abstract: TOSHIBA K3473 transistor k3473 2SK3473 SC-65
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 k3473 TOSHIBA K3473 transistor k3473 2SK3473 SC-65

    K3472

    Abstract: 2SK3472
    Text: K3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) · High forward transfer admittance: |Yfs| = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 K3472 2SK3472

    K347

    Abstract: K3472 2SK3472
    Text: K3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K3472 Switching Regulator Applications Unit: mm 5.2 ± 0.2 High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF 2SK3472 -55lled K347 K3472 2SK3472

    PCS17 SHARP

    Abstract: PCS17 SHARP pcs17 PC817 VDE PC847 sharp PC317 EK24 PC-847 PC317 k347a
    Text: SPEC DATE: PREPAREDBY: sw ,qlta-id ll.wudr4, r’w DATE: APPROVED By: 7. pL EIAEmRoNIc COMPONENTS GROUP SHARP CORPORATION A+p~T DEVICE SPECXFICATION ED-92013A ISSUE August PAW l~paga. FtEPFUC3ENTATIVE DIVISION DEXICES DIV. FOR _.- gwfnwsdealing.e-‘-.:.


    Original     		PDF ED-92013A PCS17 PC317 PCS47Yl cY6173Ko2 PCS17 SHARP PCS17 SHARP pcs17 PC817 VDE PC847 sharp PC317 EK24 PC-847 k347a

    K3473

    Abstract: TOSHIBA K3473 toshiba transistor k3473 2SK3473 SC-65 transistor k3473
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 toshiba transistor k3473 2SK3473 SC-65 transistor k3473

    2SK3472

    Abstract: K3472
    Text: K3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K3472 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		PDF 2SK3472 2SK3472 K3472

    k3473

    Abstract: K347 TOSHIBA K3473 2SK3473 SC-65 2SK347 transistor k3473
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK3473 150lled k3473 K347 TOSHIBA K3473 2SK3473 SC-65 2SK347 transistor k3473

    k3332

    Abstract: k3562 k3102 k2333 k1271 k3272 K1124 K2182 k3561 K1153
    Text: Multilayer Chip Capacitors X7R Features • ■ ■ ■ High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength Applications ■ ■ ■ ■ Blocking Coupling Decoupling Interference suppression Terminations


    Original     		PDF

    K3472

    Abstract: 2SK3472
    Text: K3472 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV K3472 単位: mm ○ スイッチングレギュレータ用 1.7 ± 0. 2 6.8 MAX. 5.2 ± 0. 2 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.8 S (標準)


    Original     		PDF 2SK3472 K3472 2SK3472

    K3473

    Abstract: TOSHIBA K3473 2SK3473
    Text: K3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 2SK3473

    K3472

    Abstract: 2SK3472
    Text: K3472 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV K3472 単位: mm ○ スイッチングレギュレータ用 1.5 ± 0. 2 6.5 ± 0.2 5.2 ± 0.2 取り扱いが簡単なエンハンスメントタイプです。 : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF 2SK3472 K3472 2SK3472

    transistor k2333

    Abstract: k2333 k3562 k3332 transistor k2182 k2182 k3272 K3561 transistor k1102 K0392
    Text: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression


    Original     		PDF KKE0272-V B37872-K0224-K62 B37931; B37931-K5221-K60 B37931-K5331-K60 B37931-K5471-K60 B37931-K5681-K60 B37931-K5102-K60 B37931-K5152-K60 B37931-K5222-K60 transistor k2333 k2333 k3562 k3332 transistor k2182 k2182 k3272 K3561 transistor k1102 K0392

    SK3466

    Abstract: SK3559 SK3444 SK3441 SK3528 SK3710 SK3452 sk3444 transistors SK3467 SK3642
    Text: TH OM S O N / D I S T R I B U T O R I B IPO LAR TRANSISTORS 5ÖE D • = 1 0 ^ 0 7 3 Q004flPl 5T5 ■ TCSK com. Maximum Ratings K E Type Device Polarity & Material Breakdown Voltages Application 'complementary device type SK3441 Device Power Dissipata Collector


    OCR Scan     		PDF SK3441 SK3440 SK3444 SK10272 SK3449 SK3450 SK3450 SK3449 SK34S2 AmT-040 SK3466 SK3559 SK3528 SK3710 SK3452 sk3444 transistors SK3467 SK3642