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Renesas Electronics Corporation 2SK3479-Z-E1-AZ MOSFET N-CH 100V 83A TO-263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3479-Z-E1-AZ	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fuji Electric Co Ltd 2SK3474-01-TE24L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK3474-01-TE24L		41,864			1 $3.957 10 $3.957 100 $3.957 1000 $1.9785 10000 $1.9785	Buy Now
Renesas Electronics Corporation 2SK3479-AZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK3479-AZ		107			1 $3.492 10 $3.492 100 $1.746 1000 $1.746 10000 $1.746	Buy Now
Toshiba America Electronic Components 2SK3475(TE12L,F) Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	2SK3475(TE12L,F)		43		1	1 $2 10 $1.8 100 $1.62 1000 $1.62 10000 $1.62	Buy Now
EBV Elektronik	2SK3475(TE12L,F)			27 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SK3475TE12LF FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK3475TE12LF		1,995			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2SK347 Datasheets (27)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK347	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK3471	Toshiba		Original	PDF
2SK3471	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK3471(TE12L,F)	Toshiba	2SK3471 - Trans MOSFET N-CH 500V 0.5A 4-Pin(3+Tab) PW-Mini T/R	Original	PDF
2SK3472	Toshiba	Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)	Original	PDF
2SK3472	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK3473	Toshiba	FETs - Nch 700V	Original	PDF
2SK3473	Toshiba	High-frequency Junction FET	Original	PDF
2SK3473	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK3474-01	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3475	Toshiba		Original	PDF
2SK3475	Toshiba	VHF/UHF Amplifier, 520MHz 0.63W, MOS-FET N-Channel enhanced	Original	PDF
2SK3475(TE12L,F)	Toshiba	2SK3475 - Trans MOSFET N-CH 20V 1A 4-Pin(3+Tab) PW-Mini T/R	Original	PDF
2SK3475TE12LF	Toshiba	2SK3475TE12LF - Trans MOSFET N-CH 20V 1A 4-Pin(3+Tab) PW-Mini T/R	Original	PDF

2SK3476	Toshiba	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type	Original	PDF
2SK3476	Toshiba		Original	PDF
2SK3476(TE12L,Q)	Toshiba	2SK3476 - Trans MOSFET N-CH 20V 3A 3-Pin PW-X T/R	Original	PDF
2SK3476TE12LQ	Toshiba	2SK3476TE12LQ - Trans MOSFET N-CH 20V 3A 3-Pin PW-X T/R	Original	PDF
2SK3479	Kexin	N-Channel MOSFET	Original	PDF
2SK3479	NEC	Nch MOS FET for large current switching	Original	PDF

2SK347 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These	Original	2SK3476	PDF
K3473 Abstract: TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65 Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3473 K3473 TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65	PDF
k3472 Abstract: 2SK3472 Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	2SK3472 k3472 2SK3472	PDF
MOSFET TOSHIBA 2015 Abstract: No abstract text available Text: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step	Original	2SK3476 100mA, 300mA, 500mA, 700mA, 900mA MOSFET TOSHIBA 2015	PDF
0480F Abstract: transistor marking zg c2 2SK3475 Text: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications • Output power: PO = 630 mW min • Gain: GP = 14.9dB (min) Drain efficiency: ηD = 45% (min) • Maximum Ratings (Ta = 25°C) Characteristics	Original	2SK3475 0480F transistor marking zg c2 2SK3475	PDF
k3472 Abstract: 2SK3472 MJ103 Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	2SK3472 k3472 2SK3472 MJ103	PDF
2SK3476 Abstract: No abstract text available Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These	Original	2SK3476 2SK3476	PDF
2SK3476 Abstract: No abstract text available Text: 2SK3476 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK3476 ○ HAM業務高周波電力増幅用単位: mm ご注意本資料に掲載されている製品は、通信機器向高周波電力増幅用に使用されることを意図しています。他の用途に使用することは意図もされてい	Original	2SK3476 2SK3476	PDF
0480F Abstract: 2SK3475 Text: 2SK3475 東芝電界効果トランジスタシリコン N チャネル MOS 形 2SK3475 ○ HAM業務無線高周波電力増幅用単位: mm ご注意本資料に掲載されている製品は、通信機器向高周波電力増幅用に使用されることを意図しています。他の用途に使用することは意図もされてい	Original	2SK3475 SC-62 030519TAA 0480F 2SK3475	PDF
2SK3471 Abstract: No abstract text available Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) · High forward transfer admittance: \|Yfs\| = 0.4 S (typ.)	Original	2SK3471 2SK3471	PDF
Untitled Abstract: No abstract text available Text: 2SK3474-01 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=23A High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 20 IAV [A] EAV [mJ] Features 25 200 150 100 N-CHANNEL SILICON POWER MOSFET	Original	2SK3474-01	PDF
d1507 Abstract: 2SK3479 2SK3479-S 2SK3479-Z 2SK3479-ZJ MP-25 MP-25Z Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3479 TO-220AB 2SK3479-S TO-262 2SK3479-ZJ TO-263 2SK3479-Z TO-220SMDNote	Original	2SK3479 2SK3479 O-220AB 2SK3479-S O-262 2SK3479-ZJ O-263 2SK3479-Z O-220SMDNote d1507 2SK3479-S 2SK3479-Z 2SK3479-ZJ MP-25 MP-25Z	PDF
gat 20 Abstract: smd transistor 26 2SK3479 1013M Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3479 TO-263 +0.1 1.27-0.1 RDS on 2 = 13 m MAX. (VGS = 4.5 V, ID = 42 A) Low Ciss: Ciss = 11000 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 MAX. (VGS = 10 V, ID = 42 A) +0.2 4.57-0.2	Original	2SK3479 O-263 gat 20 smd transistor 26 2SK3479 1013M	PDF
TOSHIBA K3473 Abstract: k3473 2SK3473 K347 SC-65 Text: 2SK3473 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV 2SK3473 スイッチングレギュレータDC−DC コンバータ用モータドライブ用単位: mm : RDS (ON) = 1.3Ω (標準) オン抵抗が低い。 : \|Yfs\| = 6.5S (標準)	Original	2SK3473 SC-65 2-16C1B 20070701-JA TOSHIBA K3473 k3473 2SK3473 K347 SC-65	PDF

Untitled Abstract: No abstract text available Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	2SK3472 to150	PDF
Untitled Abstract: No abstract text available Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	2SK3472 to150	PDF
Untitled Abstract: No abstract text available Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These	Original	2SK3476	PDF
Untitled Abstract: No abstract text available Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: \|Yfs\| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3473	PDF
2SK3471 Abstract: No abstract text available Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 10 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 0.4 S (typ.)	Original	2SK3471 2SK3471	PDF
2SK3471 Abstract: No abstract text available Text: 2SK3471 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSV 2SK3471 ○ スイッチングレギュレータDC-DC コンバータ用 • 単位: mm : RDS (ON) = 10 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 0.4 S (標準)	Original	2SK3471 SC-62 2SK3471	PDF
K3472 Abstract: 2SK3472 Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3472 Switching Regulator Applications Unit: mm High forward transfer admittance: \|Yfs\| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	Original	2SK3472 K3472 2SK3472	PDF
TOSHIBA K3473 Abstract: toshiba transistor k3473 transistor k3473 K3473 Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5 S (typ.)	Original	2SK3473 TOSHIBA K3473 toshiba transistor k3473 transistor k3473 K3473	PDF
k3473 Abstract: TOSHIBA K3473 transistor k3473 2SK3473 SC-65 Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3473 k3473 TOSHIBA K3473 transistor k3473 2SK3473 SC-65	PDF
Untitled Abstract: No abstract text available Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These	Original	2SK3476	PDF

2SK347 Search Results

2SK347 Price and Stock

Renesas Electronics Corporation 2SK3479-Z-E1-AZ

Fuji Electric Co Ltd 2SK3474-01-TE24L

Renesas Electronics Corporation 2SK3479-AZ

Toshiba America Electronic Components 2SK3475(TE12L,F)

Toshiba America Electronic Components 2SK3475TE12LF

2SK347 Datasheets (27)

2SK347 Datasheets Context Search

Untitled

K3473

k3472

MOSFET TOSHIBA 2015

0480F

k3472

2SK3476

2SK3476

0480F

2SK3471

Untitled

d1507

gat 20

TOSHIBA K3473

Untitled

Untitled

Untitled

Untitled

2SK3471

2SK3471

K3472

TOSHIBA K3473

k3473

Untitled