K11A Search Results

UL486

Abstract: UL486 Tables 7-4 UL-486 UL486B K22A36U-2 K21A36U-2 K22A39U-2 UL486 Tables 7-5
Contextual Info: n SE2I0997 CATALOG F1G. NUMBER <5^ NO. K11A30U <7| 1 CONDUCTOR RANGE ALUMINUM OR COPPER TWO: 6 STR. - 300 kcmi I BOLT HOLE SIZE 5/16' K11A34U-2 2 TWO: 4/0 STR. - 500 kcmi I 1/4' K11A36U-2 3 TWO: 2 STR. - 600 kcmiI 3/8' K11A39U-2 3 TWO: 1/0 STR. - 750 kcm iI

K11A50D

Abstract: TK11A50D K11A50
Contextual Info: K11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)

R6522P

Abstract: 4320N24-U DBX 2180 k15a that4320 EC10N compressor inverter ac -dc oa1 transistor JESD22-A113-B K12A
Contextual Info: Pre-trimmed Low-voltage Low-power Analog Engine Dynamics Processor IC THAT 4320 FEATURES APPLICATIONS • Pre-trimmed VCA & RMS detector • Companding noise reduction • Wide supply voltage range: 4.5V~16V • Wireless microphones • Low supply current: 3.7mA typ. 5V

Contextual Info: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

K11A55D

Abstract: TK11A55D
Contextual Info: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

K11A45D

Abstract: TK11A45D
Contextual Info: K11A45D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K11A45D ○ スイッチングレギュレータ用 単位: mm z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 450V)

Contextual Info: T H AT Corporation Pre-trimmed Low-voltage Low-power Analog Engine IC THAT 4320S FEATURES APPLICATIONS • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs

M0C3022

Abstract: M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482
Contextual Info: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS TYPE NO. y & 54A S Ä j f # / 54 / JV V / jL & s /s s /^ s ^ 1 N 6 26 4 1N 6 26 S 1 N6266 CQ X 1 4 CQ X1 5 CQX16 CQ X1 7 FSD1 FSD 2 FSD3 F5E1 FSE2 F5E3 F5F1 F5G1 IE D 5 5 C L ED S5 B LED56 L ED SSC F

4320S

Abstract: one band compander circuit application DBX 2180 478 processor pinout datasheet antilog amplifier dbx noise reduction ota opamp audio compressor expander IC audio limiter analog JESD22-A113
Contextual Info: T H AT Corporation Pre-trimmed Low-voltage Low-power Analog Engine IC THAT 4320S FEATURES APPLICATIONS • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs

K11A60D

Abstract: TK11A60D K11A60
Contextual Info: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

K11A55D

Abstract: TK11A55D
Contextual Info: K11A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K11A55D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.52 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)

K68A

Contextual Info: 1.0SMB SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – 1.0SMB SERIES FEATURE For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability.

K11A45D

Contextual Info: K11A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A45D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A 15.0 ± 0.3 Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.2 S (typ.)

K11A55D

Contextual Info: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

Burndy PAT750-18V parts breakdown

Abstract: BURN GI CONDUIT lp 1610 for door bell Burndy Y35 hypress parts breakdown ci an 7591 NEC c317 KPC 45 94V SAE-AS7928 burndy Y35 Hypress owner manual burndy patriot pat750-18v replacement parts
Contextual Info: Master Catalog Solutions for the Electrical Industry Experience. Technology. Answers. TM Customer Service Department 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 1-603-647-5299 International Canada 1-800-361-6975 (Quebec) 1-800-387-6487 (All other provinces)

Contextual Info: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

Contextual Info: K11A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A45D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A 15.0 ± 0.3 Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.2 S (typ.)

K11A60D

Abstract: K11A60
Contextual Info: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

MSD 7818

Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Contextual Info: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1

k13a

Abstract: oa1 transistor one band compander circuit application THAT4320S JESD22-A113-B K12A THAT4320 QSOP-28
Contextual Info: T H AT Corporation Pre-trimmed Low-voltage Low-power Analog Engine IC THAT 4320S FEATURES APPLICATIONS • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wireless microphones · Wide supply voltage range: 4.5V~16V · Wireless instrument packs

K11A60D

Abstract: K11A60 TK11A60D 11APF
Contextual Info: K11A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K11A60D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)

Contextual Info: Pre-trimmed Low-voltage Low-power Analog Engine Dynamics Processor IC THAT 4320 FEATURES APPLICATIONS • Pre-trimmed VCA & RMS detector • Companding noise reduction • Wide supply voltage range: 4.5V~16V • Wireless microphones • Low supply current: 3.7mA typ. 5V

TTAE4320

Contextual Info: Pre-trimmed Low-voltage Low Power Dynamics Processor IC TTAE4320 Preliminary AP PLI CA TIONS FEA TURES • Companding noise reduction · Pre-trimmed VCA & RMS detector · Wide supply voltage range: 4.5V~16V · Wireless microphones · Low supply current: 3.7mA typ. 5V

K11A60D

Abstract: TK11A60D K11A60
Contextual Info: K11A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K11A60D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)