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Toshiba America Electronic Components TK11A50D(STA4,Q,M) MOSFET N-CH 500V 11A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK11A50D(STA4,Q,M)	Tube	50		1	1 $2.31 10 $2.31 100 $1.033 1000 $0.87124 10000 $0.87124	Buy Now
Avnet Americas	TK11A50D(STA4,Q,M)	Tube		32 Weeks	50	1 - 10 - 100 $0.81549 1000 $0.77367 10000 $0.77367	Buy Now
Mouser Electronics	TK11A50D(STA4,Q,M)					1 $2.25 10 $2.25 100 $1.04 1000 $0.905 10000 $0.905	Get Quote

K11A50D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K11A50D Abstract: TK11A50D K11A50 Contextual Info: K11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK11A50D K11A50D TK11A50D K11A50	PDF
K11A50D Abstract: K11a50 TK11A50D 11APF K11A Contextual Info: K11A50D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K11A50D スイッチングレギュレータ用単位: mm A 3.9 3.0 : \|Yfs\| = 5.5 S (標準) 順方向伝達アドミタンスが高い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2	Original	TK11A50D K11A50D K11a50 TK11A50D 11APF K11A	PDF
K11A50D Abstract: K11A50 K*A50D TK11A50D 11APF Contextual Info: K11A50D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K11A50D スイッチングレギュレータ用単位: mm : RDS (ON) = 0.45 Ω (標準) : \|Yfs\| = 5.5 S (標準) 順方向伝達アドミタンスが高い。 2.7 ± 0.2	Original	TK11A50D K11A50D K11A50 K*A50D TK11A50D 11APF	PDF
Contextual Info: K11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K11A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK11A50D	PDF
K11A50D Abstract: K11a50 TK11A50D K*A50D Contextual Info: K11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK11A50D K11A50D K11a50 TK11A50D K*A50D	PDF
K*A50D Contextual Info: K11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK11A50D K*A50D	PDF