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Toshiba America Electronic Components TK11A55D(STA4,Q,M) MOSFET N-CH 550V 11A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK11A55D(STA4,Q,M)	Tube			1	1 $2.64 10 $2.64 100 $1.1963 1000 $1.045 10000 $1.045	Buy Now
Avnet Americas	TK11A55D(STA4,Q,M)	Tube		32 Weeks	50	1 - 10 - 100 $0.97812 1000 $0.92796 10000 $0.92796	Buy Now
Mouser Electronics	TK11A55D(STA4,Q,M)					1 $2.68 10 $2.64 100 $1.37 1000 $1.11 10000 $1.11	Get Quote

K11A55D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK11A55D	PDF
K11A55D Abstract: TK11A55D Contextual Info: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK11A55D K11A55D TK11A55D	PDF
K11A55D Abstract: TK11A55D Contextual Info: K11A55D 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K11A55D ○ スイッチングレギュレータ用単位: mm z : RDS (ON) = 0.52 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	TK11A55D SC-67 2-10U1B 20070701-JA K11A55D TK11A55D	PDF
K11A55D Contextual Info: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK11A55D K11A55D	PDF
Contextual Info: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK11A55D	PDF
K11A55D Abstract: TK11A55D k11a55d datasheet Contextual Info: K11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK11A55D K11A55D TK11A55D k11a55d datasheet	PDF