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    Toshiba America Electronic Components TK11A60D(STA4,Q,M)

    MOSFET N-CH 600V 11A TO220SIS
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    K11A60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K11A60D

    Abstract: TK11A60D K11A60
    Contextual Info: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK11A60D K11A60D TK11A60D K11A60 PDF

    K11A60D

    Abstract: K11A60
    Contextual Info: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK11A60D K11A60D K11A60 PDF

    K11A60D

    Abstract: K11A60 TK11A60D 11APF
    Contextual Info: K11A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K11A60D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK11A60D SC-67 2-10U1B K11A60D K11A60 TK11A60D 11APF PDF

    K11A60D

    Abstract: TK11A60D K11A60
    Contextual Info: K11A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K11A60D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK11A60D SC-67 2-10U1B 20070701-JA K11A60D TK11A60D K11A60 PDF

    K11A60D

    Contextual Info: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK11A60D K11A60D PDF

    K11A60D

    Abstract: K11A60 TK11A60D TC200
    Contextual Info: K11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K11A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK11A60D K11A60D K11A60 TK11A60D TC200 PDF