K MESFET S PARAMETER Search Results

NE70083

Abstract: 2SK353 DS 3107 NE700 2sk mesfet 1S121 2sk 353
Contextual Info: N E C / CALIFORNIA 1SE NEC D fa427414 O G O l b S l 1 T - 3 1-2 5 " LOW NOISE Ku-K BAND GaAs MESFET NE700 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW C O S T The NE700 is a low cost GaAs FET featuring low noise figures and high associated gains thru 18 GHz.

ES1821

Abstract: M 0737
Contextual Info: PRELIMINARY DATA SHEET 30 W L-BAND NES1821 B-30 POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS Units in mm • C L A S S A OR AB OPERATION P A C K A G E OUTLIN E T-79 • HIGH OUTPUT POW ER • HIGH GAIN • HIGH POW ER ADDED EFFICIENCY • PARTIALLY M ATCHED

RF MESFET S parameters

Abstract: CF015-11
Contextual Info: C E L S R IT S K CF015-11 Product S p e c ific a tio n s D ecem ber 1995 1 o f 1 Broadband Power GaAs MESFET Chip Features □ PldB Power: +26 dBm — □ High Gain (@12 GHz): 8 dB □ Broadband: Usable to 18 GHz — 4X 5 0 I ipj T □ Wafer Qualification Procedure

DPDT SWITCHES

Abstract: dpdt rf switch
Contextual Info: Ap/K M/A-COM ADV SEMICONDUCTOR 27E D SbM21Ö3 G QD D 30 S Ô MA4GM400C-500 GaAs DPDT RF Switch Features • CASCADABLE ■ LOW INSERTION LOSS ■ MULTIMODE OPERATION THD OF -6 0 dBc @ 10 KHz OBTAINABLE IN ViC, V2C MODE Description The MA4GM400C is a GaAs MMIC MESFET chip configured as a

NE76084

Abstract: NE760 NE76000 NE76083A S221 y427
Contextual Info: N E C / CALIFORNIA 1SE D NEC □4S7414 G D O l t m LOW NOISE Ku-K BAND G aAs MESFET 7 - r - 3 h 4 S NE760 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz The NE76000 provides a low noise figure and high associated

Contextual Info: PRELIMINARY M w T - 1 4 GP/SP/HP U s kß MicroWave Technology 10 GHz HIGH POWER GaAs MESFET CHIP 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • • • • • 2 WATT POWER OUTPUT AT 6 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL / GOLD GATE

LTA 703 S

Abstract: EM 408 gps beta e 555
Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:

NE800495-4

Abstract: NE8004 NE800495-5 NE800495-7
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES N E 800495-X S 2i>vs FR E Q U E N C Y CLASS A OPERATION HIGH EFFICIENCY: t ia d d £ 35% TYP BROADBAND CAPABILITY AVAILABILITY: C hip H e rm e tic P a c k a g e CD T3 PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES

Contextual Info: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & A S SO C IA T E D GAIN v s. FR EQ U EN C Y Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 G Hz HIGH ASSOCIATED GAIN m G a = 9.5 dB T Y P at f = 12 G Hz Lg = 0.3 |_im, Wg = 280 |_im

T-801

Abstract: CLY29 CLY29-00 CLY29-05 CLY29-10
Contextual Info: S IE M E N S CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For p rofessiona l p o w e r am plifiers • For fre q u e n c ie s from 100 M H z to 8 G H z • H erm e tic a lly s e a le d m ic ro w a v e p o w e r p a c k a g e

881-1 nec

Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
Contextual Info: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S

NE67383

Contextual Info: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 N O IS E F IG U R E A N D A S S O C IA T E D G A IN vs. FR E Q U E N C Y FEATURES VERY HIGH fMAX: 100 GHz LOW NOISE FIGURE 0.4 0.8 1.4 1.9 3.3 dB dB dB dB dB at at at at at

JE 1692

Contextual Info: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & A S SO C IA T E D GAIN v s. FR EQ U EN C Y Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 G Hz HIGH ASSOCIATED GAIN GA = 9 . 5 d B T Y P a t f = 12 G H z m Lg = 0.3 |_im, W g = 280 |_im

exor

Abstract: KGL4203
Contextual Info: DATA SHEET O K I G a A s P R O D U C T S KGL4203 10-Gbps EXOR/NOR IC 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

k MESFET S parameter

Abstract: TRF 630 KGL4215 MESFET S parameter MESFET gaas D flip flop
Contextual Info: DATA SHEET O K I G a A s P R O D U C T S KGL4215 10-Gbps Decision Circuit 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

KGL4205

Abstract: D flip flop IC
Contextual Info: DATA SHEET O K I G a A s P R O D U C T S KGL4205 10-Gbps D-Flip Flop IC 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

NEC Microwave Semiconductors

Contextual Info: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES_ Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB V d sx Drain to Source Voltage

NE650

Contextual Info: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES_ ; Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 10.5 dB V dsx Drain to Source Voltage

152900

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 11.5 dB V dsx Drain to Source Voltage V

850R599

Contextual Info: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB V dsx Drain to Source Voltage

NE6501077

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage

NEC Microwave Semiconductors

Contextual Info: L/S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%

NE6500496

Abstract: 173300 NEC Microwave Semiconductors
Contextual Info: L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%

NE6500496

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage