NEC k 3654
Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
NEC k 3654
gl 7445
nec k 813
nec 8725
gm 8562
5942
A 7601 0549
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NE8500100
Abstract: NE850R599
Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB VDSX Drain to Source Voltage
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NE850R599
NE850R599
24-Hour
NE8500100
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nec microwave
Abstract: MESFET NE850R599A NEC Microwave Semiconductors NE8500100
Text: C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 0.5 W PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB 5.2±0.3 • HIGH EFFICIENCY (PAE): 38% 1.0±0.1 • SUPERIOR INTERMODULATION DISTORTION 4.0 MIN BOTH LEADS
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NE850R599A
NE850R599A
NE8500100
24-Hour
nec microwave
MESFET
NEC Microwave Semiconductors
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NE850R5
Abstract: NE850R599
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2396
Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数
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X13769XJ2V0CD00
PC8119T
PC8120T
PC8130TA
PC8131TA
PG175TA
PC2723T
PC3206GR
PC2748
PC2745
2SK2396
PC2763
pc1658
ne27283
2SC3545
2SC3357
2sc2757
ne93239
2SC2570A
PC2711
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uPD16305
Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.
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PD43256A>
PD43256A
X13769XJ2V0CD00
PD750004
PD750006
PD750008
PD75P0016
PD750104
PD750106
PD750108
uPD16305
uPD63724A
upc5024
UPC5023
2SC1940
uPC1237
uPD65656
UPC458
UPC2710
UPD65943
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nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920
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X13769XJ2V0CD00
950MHz
500MHz
PC2794
PC1687
PC2744
PC2775/µ
nf025
NE27283
upc27
x-band power transistor 100W
NE42484
P147D
2SK2396
uPG508
nf025db
2SC5408
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65004
Abstract: 850R5 NE8500199 NE6500496 NE850R599 marking 101 california 1503
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 96/99 5.2±0.3 MARKING 1.0±0.1 YEAR INDICATOR f 2.2±0.2 4.0 MIN BOTH LEADS 4.3±0.2 MONTH INDICATOR B +.06 0.1 -.02 4.0±0.1 MONTH
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NE6500496
NE850R599
NE8500199
850R5
24-Hour
800-390-3ngs
65004
850R5
NE8500199
NE6500496
NE850R599
marking 101
california 1503
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nec k 813
Abstract: NE850R599A nec 8725
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
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uPD72002-11
Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。
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PD43256A
X13769XJ2V0CD00
PD750004
PD750006
PD750008
PD75P0016
PD750104
PD750106
PD750108
uPD72002-11
uPD16305
uPC1237
upc1701
uPD65656
2SD1392
2sb1099
UPD65625
uPD78F0841
uPG508
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220v AC voltage stabilizer schematic diagram
Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.
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Batte48
220v AC voltage stabilizer schematic diagram
1000w inverter PURE SINE WAVE schematic diagram
philips ecg master replacement guide
ecg semiconductors master replacement guide
diac 3202
bta16 6008
csr1000
mini Audio transformer 200k to 1k ct input
jrc 2904 d
BTA12 6008
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UAA 1006
Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH
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D-40472
I-20124
I-00139
D-30177
GB-MK14
D-81925
S-18322
F-78142
E-28007
UAA 1006
manual* cygnus sl 5000
transistor marking T79 ghz
PC1658G
NEC Ga FET marking code T79
gaas fet T79
pc1658
MC-7712
2SC5431
NEC U71
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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NEC Microwave Semiconductors
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES_ OUTLINE DIMENSIONS • HIGH O U T P U T POW ER: 0.5 W Units in mm PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB • HIG H EFFICIENC Y (PAE): 38% • SU PER IO R IN TER M O D U LA TIO N DISTORTIO N
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NE850R599A
E850R599A
NE8500100
NE850R599A
NEC Microwave Semiconductors
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NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
NE850R599
CODE-99
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Untitled
Abstract: No abstract text available
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
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nec microwave
Abstract: NEC Microwave Semiconductors
Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS FEATURES HIGH OUTPUT POWER: 0 5 W Units in r PACKAGE OUTLINE 99 HIGH LINEAR GAIN: 9 5 dB -5.2i0.3-*j HIGH EFFICIENCY (PAE : 38% - 1 . 0 ± 0.1 N SUPERIOR INTERMODULATION DISTORTION
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NE850R599A
NE850R599A
NE8500100
950S4-1817
24-Hour
nec microwave
NEC Microwave Semiconductors
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850R599
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB V dsx Drain to Source Voltage
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NE850R599
NE850R599
IS12I
IS22I
IS12S21I
24-Hour
850R599
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ne900075
Abstract: NE9000
Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27
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NEZ1414-2E
NEZ1414-4E
NEZ1414-8E
NEZ1011-2E
NEZ1011-8E
ne900075
NE9000
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NEM0899F01-30
Abstract: No abstract text available
Text: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added
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NES1821B-30
NES1821P-50
NES2527B-30
NEZ3436-30E
NEL200101-24
NEL2004F02-24
NEL2012F03-24
NEM0899F01-30
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63000-000
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
E850R599
CODE-99
63000-000
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