K 2750 TRANSISTOR Search Results

ixgh 1500

Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•

40n80

Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
Contextual Info: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750

7N60B

Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28

Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

k 2750 transistor

Abstract: 4557 ic NCP03XH103F05RL NCP03WF104F05RL thermistor 10k 3380 0603 3539 transistor IC 4543 NCP03XM102p05RL NCP03WL473p05RL NCP03XV103p05RL
Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

NCP03WF104F05RL

Abstract: NCP03XH103F05RL NCP15WB473F03RC NCP18WF104F12RB NCP18XH103F03RB PRF18BB471QB5RB PRF18BA103QB1RB NCP15XH103F03RC NCP15 thermistor nickel 500 ohm
Contextual Info: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.

thermistor ptc 15k ohm

Abstract: NCP15XH103F03RC NCP03XH103F05RL of thermistor 4.7K ohms ntc NCP15WB473F03RC NCP18XH103F03RB NCP18WF104F12RB THERMISTOR NTC 1100 ohm PRF18BA471QB5RB PRF15BD102RB6RC
Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.

NCP18WF104F12RB

Abstract: NCP15WF104F03RC NCP15XH103F03RC k 2750 transistor NCP18XH103F03RB BF transistor series catalog NCP15WB473F03RC traffic light using 68K R01E thermistor ptc 15k ohm
Contextual Info: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.

50R0500

Abstract: 5SSB30X 5SSB30X0800 thyris
Contextual Info: S I L I C O N S U R G E Diffused pnp structure. Symmetric blocking characteristics with avalanche breakdown capability. Effective protection against repetitive and non-repetitive overvoltages. Suitable for thyristors, transistors and IGBTs. Type and ordering

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

smd transistor 6g

Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Contextual Info: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance

IEGT

Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51
Contextual Info: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.

2SK1792

Abstract: k 2750 transistor
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1792 Field Effect Transistor Industrial Applications TQ-220FL Unit in mm Silicon N Channel M OSType l?-7t-MOS IV 10.3 M AX High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features • 4-Volt Gate Drive

2SK1653

Abstract: K1653
Contextual Info: TOSHIBA 2SK1653 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 653 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. 10 ±0.3 $53.2 ± 0.2

30X0900

Abstract: 555B 55SA 50R0500 5SSB30X1600 5SSA30R1000 5SBB20T1 5sbb 5SBD
Contextual Info: Silicon Surge Voltage Suppressors Diffundierte pnp-Struktur. Symmetrische Sperrkennlinie mit kontrollierter Avalanche-Charakteristik. Effektiver Schutz gegen repetitive und transiente Überspannungen. Geeignet für den Schutz von Thyristoren, Transistoren und IGBTs.

2SK1653

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1653 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType l?-7t-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

2SK1542

Contextual Info: TOSHIBA 2SK1542 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 5 42 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4-Volt Gate Drive

2SC2742

Abstract: 2749 n2761
Contextual Info: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

K1792

Contextual Info: TOSHIBA 2SK1792 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 792 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. INDUSTRIAL APPLICATIONS TO-22QFL _ U nit in mm 10.3M AX.

Contextual Info: NTC Thermistors The NTC Thermistors This is a Negative Temperature Coefficient Resistor whose resistance changes as ambient temperature changes. Thermistor comprises 2 or 4 kinds of metal oxides of iron, nickel, cobalt, manganese and copper, being shaped and sintered

99029 transistor

Abstract: transistor 99029 thermistor 10k ohm Senju M705-221BM5-42-11 NTC thermistor 10k ohm Data sheet of thermistor 47K ohms ntc T 1829-1 transistor NTC Thermistor 100 Ohm NCP18WF104F M705-221BM5-42-11
Contextual Info: R44E9.pdf 05.4.13 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF

Transistor BC 227

Abstract: Electronic car ignition circuit IRF 940 TRANSISTOR Transistor S 637 T s637t TRANSISTOR G13 npn transistors 400V low power to92 A27 637 Marking Code A27 DIODE irf 940
Contextual Info: 1 TELEFUNKEN ELECTRONIC 1?E I> a^SOD^b ODGSbll fi • AL6C S 637 T electronic CrwtiWfochnotogtes Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application for high voltages where as very low input power is required

Contextual Info: Tem ic U3900BM S e m i c o n d u c t o r s Programmable Telephone Audio Processor Description The programmable telephone audio processor U3900BM is a linear integrated circuit for use in feature phones, answering machines, fax machines and cordless phones.

LT 5232

Abstract: epa 2130 DR640 sinus wave oscillator ROB3 kss delay line ms-19
Contextual Info: Temic U3900BM S e m i c o n ü u c tors Programmable Telephone Audio Processor Description The programmable telephone audio processor U3900BM is a linear integrated circuit for use in feature phones, answering machines, fax machines and cordless phones. It contains the speech circuit, tone-ringer interface with