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    K 2750 TRANSISTOR Search Results

    K 2750 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 2750 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please


    Original     		PDF NCP03WF104J05RL NCP03WL104J05RL NCP03WL154J05RL NCP03WL224J05RL

    k 2750 transistor

    Abstract: 4557 ic NCP03XH103F05RL NCP03WF104F05RL thermistor 10k 3380 0603 3539 transistor IC 4543 NCP03XM102p05RL NCP03WL473p05RL NCP03XV103p05RL
    Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please


    Original     		PDF NCP03YS110J05RL NCP03YS220J05RL NCP03YS330J05RL NCP03YS470J05RL NCP03YS680J05RL NCP03YS101J05RL NCP03XM102p05RL NCP03XM152p05RL NCP03XM222p05RL NCP03XM332p05RL k 2750 transistor 4557 ic NCP03XH103F05RL NCP03WF104F05RL thermistor 10k 3380 0603 3539 transistor IC 4543 NCP03WL473p05RL NCP03XV103p05RL

    NCP03WF104F05RL

    Abstract: NCP03XH103F05RL NCP15WB473F03RC NCP18WF104F12RB NCP18XH103F03RB PRF18BB471QB5RB PRF18BA103QB1RB NCP15XH103F03RC NCP15 thermistor nickel 500 ohm
    Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.


    Original     		PDF NCP18 NCP21 R01E-1 NCP03WF104F05RL NCP03XH103F05RL NCP15WB473F03RC NCP18WF104F12RB NCP18XH103F03RB PRF18BB471QB5RB PRF18BA103QB1RB NCP15XH103F03RC NCP15 thermistor nickel 500 ohm

    thermistor ptc 15k ohm

    Abstract: NCP15XH103F03RC NCP03XH103F05RL of thermistor 4.7K ohms ntc NCP15WB473F03RC NCP18XH103F03RB NCP18WF104F12RB THERMISTOR NTC 1100 ohm PRF18BA471QB5RB PRF15BD102RB6RC
    Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.


    Original     		PDF 900ppm, 900ppm 1500ppm UL1434, E137188) 150mm R01E-2 thermistor ptc 15k ohm NCP15XH103F03RC NCP03XH103F05RL of thermistor 4.7K ohms ntc NCP15WB473F03RC NCP18XH103F03RB NCP18WF104F12RB THERMISTOR NTC 1100 ohm PRF18BA471QB5RB PRF15BD102RB6RC

    NCP18WF104F12RB

    Abstract: NCP15WF104F03RC NCP15XH103F03RC k 2750 transistor NCP18XH103F03RB BF transistor series catalog NCP15WB473F03RC traffic light using 68K R01E thermistor ptc 15k ohm
    Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station


    Original     		PDF MMA20312BV MMA20312BVT1 MMA20312BV

    smd transistor 6g

    Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
    Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component

    IEGT

    Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51
    Text: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.


    Original     		PDF BEE0030A IEGT TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51

    Untitled

    Abstract: No abstract text available
    Text: NTC Thermistors The NTC Thermistors This is a Negative Temperature Coefficient Resistor whose resistance changes as ambient temperature changes. Thermistor comprises 2 or 4 kinds of metal oxides of iron, nickel, cobalt, manganese and copper, being shaped and sintered


    Original     		PDF

    99029 transistor

    Abstract: transistor 99029 thermistor 10k ohm Senju M705-221BM5-42-11 NTC thermistor 10k ohm Data sheet of thermistor 47K ohms ntc T 1829-1 transistor NTC Thermistor 100 Ohm NCP18WF104F M705-221BM5-42-11
    Text: R44E9.pdf 05.4.13 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF


    Original     		PDF R44E9 NCP03 300mm/min. 99029 transistor transistor 99029 thermistor 10k ohm Senju M705-221BM5-42-11 NTC thermistor 10k ohm Data sheet of thermistor 47K ohms ntc T 1829-1 transistor NTC Thermistor 100 Ohm NCP18WF104F M705-221BM5-42-11

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


    OCR Scan     		PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a

    40n80

    Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
    Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750


    OCR Scan     		PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 10N100 17N100 25N100 40n80 IXGH40N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


    OCR Scan     		PDF 30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

    50R0500

    Abstract: 5SSB30X 5SSB30X0800 thyris
    Text: S I L I C O N S U R G E Diffused pnp structure. Symmetric blocking characteristics with avalanche breakdown capability. Effective protection against repetitive and non-repetitive overvoltages. Suitable for thyristors, transistors and IGBTs. Type and ordering


    OCR Scan     		PDF 5SSA20R15 50X0400 38X0600 30X0800 26X2200 23X2400 23X2600 20X2800 20X3000 50R0500 5SSB30X 5SSB30X0800 thyris

    2SK1653

    Abstract: K1653
    Text: TOSHIBA 2SK1653 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 653 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. 10 ±0.3 $53.2 ± 0.2


    OCR Scan     		PDF 2SK1653 2SK1653 K1653

    Untitled

    Abstract: No abstract text available
    Text: 3SE D m Ô23fc.320 0 0 1 7 2 3 Ì NPN Silicon Switching Transistor SIEM ENS/ • • • SPCL-, 3 BISIP SMBT 3904 SEM ICO N D S _ High D C current gain: 0.1 to 100 mA Low collector-emltter saturation voltage Complementary type: S M B T 3906 PNP


    OCR Scan     		PDF Q68000-A4340 Q68000-A4416 SmA10' SMBT3904 001753b T-35-11

    30X0900

    Abstract: 555B 55SA 50R0500 5SSB30X1600 5SSA30R1000 5SBB20T1 5sbb 5SBD
    Text: Silicon Surge Voltage Suppressors Diffundierte pnp-Struktur. Symmetrische Sperrkennlinie mit kontrollierter Avalanche-Charakteristik. Effektiver Schutz gegen repetitive und transiente Überspannungen. Geeignet für den Schutz von Thyristoren, Transistoren und IGBTs.


    OCR Scan     		PDF 001bfi3fi 5SBB20T11 VBO/100 VR/100inV 000007b 30X0900 555B 55SA 50R0500 5SSB30X1600 5SSA30R1000 5SBB20T1 5sbb 5SBD

    2SK1653

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1653 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType l?-7t-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK1653 100nA 20kii) 2SK1653

    2SK1542

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1542 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 5 42 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4-Volt Gate Drive


    OCR Scan     		PDF 2SK1542 2SK1542

    2SC2742

    Abstract: 2749 n2761
    Text: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 500MHz, 7-C-25X) V-25T! Tc-25 2SC2742 2749 n2761

    K1792

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1792 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 792 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. INDUSTRIAL APPLICATIONS TO-22QFL _ U nit in mm 10.3M AX.


    OCR Scan     		PDF 2SK1792 O-22QFL K1792

    Transistor BC 227

    Abstract: Electronic car ignition circuit IRF 940 TRANSISTOR Transistor S 637 T s637t TRANSISTOR G13 npn transistors 400V low power to92 A27 637 Marking Code A27 DIODE irf 940
    Text: 1 TELEFUNKEN ELECTRONIC 1?E I> a^SOD^b ODGSbll fi • AL6C S 637 T electronic CrwtiWfochnotogtes Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application for high voltages where as very low input power is required


    OCR Scan     		PDF DIN41 15A3DIN Transistor BC 227 Electronic car ignition circuit IRF 940 TRANSISTOR Transistor S 637 T s637t TRANSISTOR G13 npn transistors 400V low power to92 A27 637 Marking Code A27 DIODE irf 940

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U3900BM S e m i c o n d u c t o r s Programmable Telephone Audio Processor Description The programmable telephone audio processor U3900BM is a linear integrated circuit for use in feature phones, answering machines, fax machines and cordless phones.


    OCR Scan     		PDF U3900BM U3900BM D-74025 15-Apr-99

    LT 5232

    Abstract: epa 2130 DR640 sinus wave oscillator ROB3 kss delay line ms-19
    Text: Temic U3900BM S e m i c o n ü u c tors Programmable Telephone Audio Processor Description The programmable telephone audio processor U3900BM is a linear integrated circuit for use in feature phones, answering machines, fax machines and cordless phones. It contains the speech circuit, tone-ringer interface with


    OCR Scan     		PDF U3900BM U3900BM D-74025 25-Aug-98 LT 5232 epa 2130 DR640 sinus wave oscillator ROB3 kss delay line ms-19