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    MG1200FXF1US51 Search Results

    MG1200FXF1US51 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG1200FXF1US51 Toshiba TRANS IGBT MODULE N-CH 3300V 1200A 9(2-193A1A) Original PDF
    MG1200FXF1US51 Toshiba TOSHIBA GTR Module Silicon N-Channel IGBT Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C


    Original
    PDF MG1200FXF1US51 MG1200FXF1US51

    MG1200FXF1US51

    Abstract: No abstract text available
    Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C


    Original
    PDF MG1200FXF1US51 MG1200FXF1US51

    MG1200FXF1US51

    Abstract: IGBT Guide YG6260
    Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance · Enhancement mode · Electrodes are isolated from case. Equivalent Circuit C C C C E


    Original
    PDF MG1200FXF1US51 MG1200FXF1US51 IGBT Guide YG6260

    MG1200FXF1US51

    Abstract: YG6260
    Text: MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C


    Original
    PDF MG1200FXF1US51 12transportation MG1200FXF1US51 YG6260

    Untitled

    Abstract: No abstract text available
    Text: MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance · Enhancement mode · Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C


    Original
    PDF MG1200FXF1US51

    IEGT

    Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51
    Text: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.


    Original
    PDF BEE0030A IEGT TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51