Untitled
Abstract: No abstract text available
Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C
|
Original
|
PDF
|
MG1200FXF1US51
MG1200FXF1US51
|
MG1200FXF1US51
Abstract: No abstract text available
Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C
|
Original
|
PDF
|
MG1200FXF1US51
MG1200FXF1US51
|
MG1200FXF1US51
Abstract: IGBT Guide YG6260
Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance · Enhancement mode · Electrodes are isolated from case. Equivalent Circuit C C C C E
|
Original
|
PDF
|
MG1200FXF1US51
MG1200FXF1US51
IGBT Guide
YG6260
|
MG1200FXF1US51
Abstract: YG6260
Text: MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
MG1200FXF1US51
12transportation
MG1200FXF1US51
YG6260
|
Untitled
Abstract: No abstract text available
Text: MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance · Enhancement mode · Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
MG1200FXF1US51
|
IEGT
Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51
Text: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.
|
Original
|
PDF
|
BEE0030A
IEGT
TOSHIBA IEGT
MG1200FXF1US53
MG400FXF2YS53
MG800FXF1US53
MG800FXF
toshiba gto
IEGT toshiba
MG800FX
MG1200FXF1US51
|