JSP 2N Search Results

MKP 1.44/A

Abstract: MKP 1.44/A capacitor MN4680-A-JSP
Contextual Info: Loose JSP Taped Fig.1 MKP Series Fig. 2 mEtaLLizEd POLYPROPYLENE FILM capacitor D.C. AND PULSE APPLICATIONS Typical applications: Automotive and Industrial applications Capacitor for DC-DC converter, inverter and supply High Capacitance per volume PRODUCT CODE: JSP

IR512

Abstract: ir5100 IR433 20E-3 IR5100-A-JSP MKP 1.44/A capacitor
Contextual Info: Loose JSP Taped Fig.1 MKP Series Fig. 2 metallized POLYPROPYLENE FILM capacitor D.C. AND PULSE APPLICATIONS Typical applications: Automotive and Industrial applications Capacitor for DC-DC converter, inverter and supply High Capacitance per volume PRODUCT CODE: JSP

IN4100

Abstract: capacitor polyester pme IR510 IR433 IR4270-0-JSP in4150 ir5100 IR4220 IR4470-0-JSP IR4390
Contextual Info: T ER D N U Loose EN M P O VEL JSP DE MKT Series METALLIZED POLYESTER FILM CAPACITOR D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, bypassing, interference suppression in low voltage applications i. e. Automotive Fig. 1

Contextual Info: 2N2944AUB – 2N2946AUB PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944AUB through 2N2946AUB PNP silicon transistor device is military qualified up to

Contextual Info: 2N7002K TrenchMOS logic level FET Rev. 01 — 20 October 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Very fast switching

fet 2n7002K

Abstract: 03an72 2N7002K
Contextual Info: 2N7002K TrenchMOS logic level FET Rev. 01 — 20 October 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level compatible

03aa03

Abstract: 2N7002-T1 2N7002T
Contextual Info: 2N7002T N-channel TrenchMOS FET Rev. 01 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

03aa03

Abstract: 2N7002-1 2N70021
Contextual Info: 2N7002 N-channel TrenchMOS FET Rev. 05 — 15 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

fet 2n7002K

Abstract: MSB003 2N7002K 03ab09
Contextual Info: 2N7002K TrenchMOS logic level FET Rev. 01 — 20 October 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level compatible

2n7002-1

Abstract: 2N7002 PHILIPS PHILIPS 2N7002 MBB076 2N7002* application 2N7002 2N7002-03 HZG336 2n70020 2N70021
Contextual Info: 2N7002 N-channel TrenchMOS FET Rev. 06 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

2N7002F

Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 02 — 9 May 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

2N7002F

Abstract: SP SOT23 2N7002* application
Contextual Info: 2N7002F TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002F in SOT23. 2. Features

philips 2n7002e

Contextual Info: 2N7002E TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002E in SOT23. 2. Features

Contextual Info: 2N7002KA N-channel TrenchMOS FET Rev. 01 — 21 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible

2N7002KA

Contextual Info: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible

2N7002F

Abstract: 2N7002F_2
Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

03aa03

Abstract: 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application
Contextual Info: 2N7002 N-channel TrenchMOS FET Rev. 04 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible

1.4944

Abstract: 2N7002E
Contextual Info: 2N7002E N-channel TrenchMOS FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible

2N7002E

Abstract: 2N7002-E3
Contextual Info: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

Contextual Info: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

Contextual Info: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

2N7002F

Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

Contextual Info: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial