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    Central Semiconductor Corp 2N7002-TR-PBFREE

    MOSFET N-CH 60V 115MA SOT23
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    DigiKey 2N7002-TR-PBFREE Cut Tape 227,870 1
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    Micro Commercial Components 2N7002-TP

    MOSFET N-CH 60V 115MA SOT23
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    Mouser Electronics 2N7002-TP 246,618
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    Ameya Holding Limited 2N7002-TP 65
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    Diodes Incorporated 2N7002TQ-7-F

    MOSFET N-CH 60V 115MA SOT523
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    DigiKey 2N7002TQ-7-F Reel 33,000 3,000
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    Mouser Electronics 2N7002TQ-7-F 5,853
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    Arrow Electronics 2N7002TQ-7-F 90,000 8 Weeks 3,000
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    onsemi 2N7002T

    MOSFET N-CH 60V 115MA SOT-523F
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    DigiKey 2N7002T Digi-Reel 14,242 1
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    2N7002T Reel 12,000 3,000
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    Mouser Electronics 2N7002T 168,501
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    Verical 2N7002T 21,000 3,000
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    2N7002T 5,946 83
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    2N7002T 3,000 25 Weeks 3,000
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    Future Electronics 2N7002T Reel 18,000 25 Weeks 3,000
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    Onlinecomponents.com 2N7002T 21,000
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    TME 2N7002T 2,250 1
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    2N7002T 45 5
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    Vishay Siliconix 2N7002-T1-GE3

    MOSFET N-CH 60V 115MA TO236
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    DigiKey 2N7002-T1-GE3 Digi-Reel 5,938 1
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    2N7002T Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002T Diodes Incorporated N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
    2N7002T Diodes Incorporated TRANS MOSFET N-CH 60V 0.115A 3SOT-23 Original PDF
    2N7002T Diodes Incorporated TRANSISTOR, FET-N Original PDF
    2N7002T Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002T Kexin N-Channel Enhancement Mode MOSFET Original PDF
    2N7002T NXP Semiconductors N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V Original PDF
    2N7002T Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2N7002T TY Semiconductor N-Channel Enhancement Mode MOSFET - SOT-523 Original PDF
    2N7002T1 Vishay TRANS MOSFET SMD 2N7002L SOT23 Original PDF
    2N7002-T1 Vishay Telefunken TRANS MOSFET N-CH 60V 0.115A 3TO-236 REEL Original PDF
    2N7002T1E3 Vishay TRANS MOSFET SMD 2N7002L SOT23 Original PDF
    2N7002-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 115MA SOT23 Original PDF
    2N7002T1E3 Vishay Siliconix TRANS MOSFET SMD 2N7002L SOT23 Original PDF
    2N7002-T1-E3 Vishay Telefunken TRANS MOSFET N-CH 60V 0.115A 3TO-236 T/R Original PDF
    2N7002T1-E3 Vishay Telefunken TRANS MOSFET N-CH 60V 0.115A 3TO-236 REEL Original PDF
    2N7002-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 115MA SOT23 Original PDF
    2N7002T,215 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 300MA SOT-23 Original PDF
    2N7002T3 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    2N7002T-7 Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 115MA SOT-523 Original PDF
    2N7002T-7 Diodes Incorporated TRANS MOSFET N-CH 60V 0.115A 3SOT-523 T/R Original PDF

    2N7002T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


    Original
    PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89

    k72 transistor SOT523

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002T Features • • • • • • • • x Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original
    PDF 2N7002T OT-523 OT-523, k72 transistor SOT523

    marking 72

    Abstract: 10V 50mA zero voltage switch 2N7002T
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 2N7002T MOSFET Plastic-Encapsulate Transistors SOT-523 N-Channel FEATURES Power dissipation 1. GATE PD: 0.15 W (Tamb=25℃) 2. SOURCE 3. DRAIN Collector current ID: 115 mA Collector-base voltage


    Original
    PDF OT-523 2N7002T 500mA 200mA 200mA marking 72 10V 50mA zero voltage switch 2N7002T

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2N7002T MOSFET N-Channel SOT-523 1. GATE 2. SOURCE FEATURES 3. DRAIN 0.225W (Tamb=25℃) 0.95 0.4 2.9 Drain current ID: 115mA Drain-Source voltage VDS: 60V Operating and storage junction temperature range


    Original
    PDF OT-523 2N7002T OT-523 115mA

    2N7002T

    Abstract: No abstract text available
    Text: 2N7002T NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


    Original
    PDF 2N7002T OT-523 OT-523, MIL-STD-202, -250mA 2N7002T OT-523 3000/Tape com/datasheets/ap02007 DS30301

    Untitled

    Abstract: No abstract text available
    Text: 2N7002T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


    Original
    PDF 2N7002T AEC-Q101 OT523 OT523 J-STD-020D MIL-STD-202, DS30301

    Untitled

    Abstract: No abstract text available
    Text: 2N7002TB 60V N-CHANNEL ENHANCEMENT MODE MOSFET 0.044 1.10 0.035(0.90) 0.067(1.70) 0.059(1.50) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State


    Original
    PDF 2N7002TB 500mA 2002/95/EC OT-523 OT-523, MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2N7002T Power MOSFET 3 0 0 m A, 6 0 V N -CH AN N EL POWER M OSFET  DESCRI PT I ON The UTC 2N7002T uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original
    PDF 2N7002T 2N7002T 2N7002TL-AN3-R 2N7002TG-AN3-R OT-523 QW-R502-542

    2N7002T

    Abstract: 2N7002T-7 2N7002T-7-F J-STD-020A 2N7002TA
    Text: 2N7002T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: 2N7002T Features • · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


    Original
    PDF 2N7002T OT-523 OT-523, com/datasheets/ap02007 2N7002T-7-F. DS30301 2N7002T 2N7002T-7 2N7002T-7-F J-STD-020A 2N7002TA

    03aa03

    Abstract: 2N7002-T1 2N7002T
    Text: 2N7002T N-channel TrenchMOS FET Rev. 01 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    PDF 2N7002T mbb076 2N7002T 03aa03 2N7002-T1

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002T Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original
    PDF 2N7002T 300mA, 2N7002T 2N7002TL-AN3-R 2N7002TG-AN3-R OT-523 QW-R502-542

    k72 transistor SOT523

    Abstract: transistor k72
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002T Features • • • • • • • • x Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original
    PDF 2N7002T OT-523 OT-523, k72 transistor SOT523 transistor k72

    2N7002T

    Abstract: MosFET
    Text: 2N7002T 0.115A , 60V , RDS ON 7.2Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES     High density cell design for low RDS(ON). Voltage controlled small signal switch.


    Original
    PDF 2N7002T OT-523 500mA 200mA 115mA, 500mA, 13-Dec-2011 2N7002T MosFET

    Untitled

    Abstract: No abstract text available
    Text: 2N7002T N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant


    Original
    PDF 2N7002T 2N7002T

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET N-Channel SOT-523 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original
    PDF OT-523 2N7002T OT-523 500mA 200mA 115mA, 500mA

    k72 transistor

    Abstract: transistor k72 2N7002T n-channel enhancement mosfet
    Text: 2N7002T N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES     High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable.


    Original
    PDF 2N7002T OT-523 MARKINGK72 50BSC 115mA, 500mA, 10-Jun-2010 k72 transistor transistor k72 2N7002T n-channel enhancement mosfet

    marking 72

    Abstract: 2N7002T
    Text: SOD-523 Plastic-EncapsulateTransistors 2N7002T MOSFET N-Channel SOT-523 1. GATE 2. SOURCE FEATURES 3. DRAIN Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range


    Original
    PDF OD-523 2N7002T OT-523 500mA 200mA 200mA marking 72 2N7002T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002T Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original
    PDF 2N7002T 300mA, 2N7002T 2N7002TG-AN3-R OT-523 QW-R502-542

    Untitled

    Abstract: No abstract text available
    Text: 2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) ID TA = 25°C 60V 7.5Ω @ VGS = 5V 115mA • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original
    PDF 2N7002T 115mA AEC-Q101 DS30301

    2N7002T

    Abstract: 2N7002T-7 2N7002T-7-F
    Text: SPICE MODELS: 2N7002T 2N7002T NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance A Dim Min Max Typ Fast Switching Speed D A 0.15 0.30 0.22 B 0.75 0.85


    Original
    PDF 2N7002T J-STD-020C MIL-STD-202, 3000/Tape com/datasheets/ap02007 2N7002T-7-F. DS30301 2N7002T 2N7002T-7 2N7002T-7-F

    2N7002T

    Abstract: 2N7002T-7-F J-STD-020D
    Text: 2N7002T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original
    PDF 2N7002T AEC-Q101 OT-523 J-STD-020D MIL-STD-202, DS30301 2N7002T 2N7002T-7-F J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: 2N7002T NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package · · · ·


    Original
    PDF 2N7002T OT-523 OT-523, J-STD-020A MIL-STD-202, 2N7002T 3000/Tape com/datasheets/ap02007 DS30301

    2N7002TGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002TGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-75/SOT-416 FEATURE


    Original
    PDF 2N7002TGP SC-75/SOT-416 SC-75/SOT-416) 2N7002TGP

    2N7002T

    Abstract: J-STD-020A
    Text: 2N7002T NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package · · · ·


    Original
    PDF 2N7002T OT-523 OT-523, J-STD-020A MIL-STD-202, 3000/Tape com/datasheets/ap02007 DS30301 2N7002T J-STD-020A