Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2518T221K Features Item Summary 220 H(±10%), 115mA, 110mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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CBC2518T221K
115mA,
110mA,
2000pcs
796MHz
115mA
110mA
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2518T221K Features Item Summary 220 H(±10%), 115mA, 110mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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CBC2518T221K
115mA,
110mA,
2000pcs
796MHz
115mA
110mA
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Untitled
Abstract: No abstract text available
Text: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF
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S2N7002DW
115mA,
OT-363
OT-363ï
MIL-STD-202,
2N7002DW
26-Jul-2010
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Untitled
Abstract: No abstract text available
Text: BSI Very Low Power/Voltage CMOS SRAM 1M X 16 bit Dual CE Pins FEATURES BS616LV1615 DESCRIPTION • Vcc operation voltage : 4.5~5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA (@55ns) operating current I -grade: 115mA (@55ns) operating current
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BS616LV1615
113mA
115mA
x8/x16
BS616LV1615
R0201-BS616LV1615
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G3018
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/11/30 REVISED DATE : G3018 BVDSS RDS ON ID N-CHANNEL MOSFET Description 30V 8 115mA N-channel enhancement-mode MOSFET Features Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device ideal for portable equipment.
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G3018
115mA
G3018
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marking K72
Abstract: 2N7002DW
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N7002DW Features • • • • • • Power Dissipation: 0.2W Tamb=25℃ Drain Current: 115mA Drain-source Voltage: 60V
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2N7002DW
115mA
20Vdc)
60Vdc,
10Vdc)
50mAdc)
10Vdc,
500mAdc)
marking K72
2N7002DW
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2N7002T MOSFET N-Channel SOT-523 1. GATE 2. SOURCE FEATURES 3. DRAIN 0.225W (Tamb=25℃) 0.95 0.4 2.9 Drain current ID: 115mA Drain-Source voltage VDS: 60V Operating and storage junction temperature range
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OT-523
2N7002T
OT-523
115mA
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBMF1608T100K Features Item Summary 10 H(±10%), 115mA, 380mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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CBMF1608T100K
115mA,
380mA,
3000pcs
52MHz
115mA
380mA
32MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2518T221K Features Item Summary 220 H(±10%), 115mA, 110mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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CBC2518T221K
115mA,
110mA,
2000pcs
796MHz
115mA
110mA
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BS616LV1615
Abstract: No abstract text available
Text: BSI Very Low Power/Voltage CMOS SRAM 1M X 16 bit Dual CE Pins FEATURES BS616LV1615 DESCRIPTION • Vcc operation voltage : 4.5~5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA (@55ns) operating current I -grade: 115mA (@55ns) operating current
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BS616LV1615
113mA
115mA
x8/x16
BS616LV1615
R0201-BS616LV1615
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB1608T2R2M Features Item Summary 2.2 H(±20%), 115mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 4000pcs Products characteristics table External Dimensions
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LB1608T2R2M
115mA,
4000pcs
96MHz
115mA
80MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 1. GATE 2. SOURCE FEATURES 3. DRAIN 0.225W (Tamb=25℃) 0.95 0.4 2.9 Drain current 115mA ID: Drain-Source voltage VDS: 60V Operating and storage junction temperature range
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OT-323
2N7002W
OT-323
115mA
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S2N7002K
Abstract: MosFET J 115 mosfet MARKING RK 2000V mosfet
Text: S2N7002K 115mA, 60V N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-23 A L 3 3 FEATURES C B Top View 1 1 3 DRAIN Low on resistance. Fast switching speed. Low-voltage drive.
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S2N7002K
115mA,
OT-23
VDD30V,
200mA,
08-Mar-2010
S2N7002K
MosFET
J 115 mosfet
MARKING RK
2000V mosfet
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Untitled
Abstract: No abstract text available
Text: 2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) ID TA = 25°C 60V 7.5Ω @ VGS = 5V 115mA • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002T
115mA
AEC-Q101
DS30301
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM • VDSS = 60V , ID = 115mA, RDS ON = 7.51 • • • • • Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available
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2N7002CSM
115mA,
OT-23
115mA
800mA
350mW
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parallel mosfet
Abstract: MOSFET RK7002 parallel MOSFET Transistors "N-Channel MOSFET" mosfet ratings mosfet specification mosfet datasheet n-channel mosfet transistor specifications of MOSFET
Text: Transistors Interface and switching 60V, 115mA RK7002 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. FExternal dimensions (Units: mm) FStructure Silicon N-channel MOSFET
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115mA)
RK7002
parallel mosfet
MOSFET
RK7002
parallel MOSFET Transistors
"N-Channel MOSFET"
mosfet ratings
mosfet specification
mosfet datasheet
n-channel mosfet transistor
specifications of MOSFET
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2518T220K Features Item Summary 22 H(±10%), 115mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1007/2518
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LB2518T220K
115mA,
2000pcs
52MHz
115mA
19MHz
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CR32NP-3R3M
Abstract: CR32 CR32NP-1R5M
Text: POWER INDUCTORS <SMD Type: CR Series> Type: CR32 ◆ Product Description ・4.1x3.8mm Max. L×W , 3.0mm Max. Height. ・Inductance Range: 1.0～390 H ・Rated current range:115mA～2.1A ・In addition to the standard versions of inductors shown here, custom inductors are available to meet your exact
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0390H
115mA2
CR32NP-1R
CR32NP-3R3M
CR32
CR32NP-1R5M
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2518T221M Features Item Summary 220 H(±20%), 115mA, 110mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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CBC2518T221M
115mA,
110mA,
2000pcs
796MHz
115mA
110mA
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Untitled
Abstract: No abstract text available
Text: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching
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DMN66D0LDW
OT363
AEC-Q101
DS31232
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Untitled
Abstract: No abstract text available
Text: PRODUCT DATA SHEET Part Number : Type Incandescent Size T3 Rating 715 Description T-1 Wire terminal lamp 5V 115mA Dimensions mm : TEST VOLTS 5 CURRENT (mA) Min. Nom. Max. 103 115 127 LIGHT OUTPUT (Lm) Min. Nom. Max. 1.4 1.9 2.4 LIFE Hours 40000 Notes: 1 Lead wires 0.25mm diameter x 25.4mm long with tinned finish.
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115mA
IP326RA
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Untitled
Abstract: No abstract text available
Text: Transistors Interfaces and switching 60V, 115mA RK7002 •Fe a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. ^External dimensions (Units: mm) • MOS F E T
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115mA)
RK7002
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rkm sot-23
Abstract: rkm transistor RKM SOT RK7002 RK7002 equivalent rkm 15 transistor
Text: Transistors Interfaces and switching 60V, 115mA RK7002 •Features 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •External dimensions {Units: mm) 2.9±0.2 0.95 ±8:f
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115mA)
RK7002
OT-23
rkm sot-23
rkm transistor
RKM SOT
RK7002
RK7002 equivalent
rkm 15 transistor
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202F
Abstract: No abstract text available
Text: PART NUMBER REV. IFL—L X 7 3 3 5 A UNCONTROLLED DOCUMENT REV, A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 1 4 9. 04.12.07 ELECTRO-OPTICAL SPECIFICATIONS DESIGN VOLTAGE VAC OR VDC: 5.0 CURRENT DRAW «> DESIGN VOLTS: 115mA M.S.C.P, 0 DESIGN VOLTS:
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LX7335
115mA
MIL-E-54D0N,
202F
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