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    Littelfuse Inc IXTQ52P10P

    MOSFET P-CH 100V 52A TO3P
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    DigiKey IXTQ52P10P Tube 2,683 1
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    Newark IXTQ52P10P Bulk 1
    • 1 $8.44
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    • 100 $4.93
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    Littelfuse Inc IXTQ36P15P

    MOSFET P-CH 150V 36A TO3P
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    DigiKey IXTQ36P15P Tube 936 1
    • 1 $8.01
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    Littelfuse Inc IXTQ50N20P

    MOSFET N-CH 200V 50A TO3P
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    DigiKey IXTQ50N20P Tube 654 1
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    Littelfuse Inc IXTQ150N15P

    MOSFET N-CH 150V 150A TO3P
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    DigiKey IXTQ150N15P Tube 429 1
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    Littelfuse Inc IXTQ44P15T

    MOSFET P-CH 150V 44A TO3P
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    DigiKey IXTQ44P15T Tube 300 1
    • 1 $8.29
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    • 100 $4.826
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    Newark IXTQ44P15T Bulk 300
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    IXTQ Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTQ100N25P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF
    IXTQ102N15T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-3P Original PDF
    IXTQ10P50P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-3P Original PDF
    IXTQ110N055P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF
    IXTQ110N10P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF
    IXTQ120N15P IXYS PolarHT Power MOSFET Original PDF
    IXTQ120N20P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF
    IXTQ130N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO-3P Original PDF
    IXTQ130N15T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 130A TO-3P Original PDF
    IXTQ140N10P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF
    IXTQ14N60P IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF
    IXTQ14N60P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 14A TO-3P Original PDF
    IXTQ150N06P IXYS PolarHT Power MOSFET N-Channel Enhancement Mode Original PDF
    IXTQ150N15P IXYS PolarHT Power MOSFET Original PDF
    IXTQ152N085T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 85V 152A TO-3P Original PDF
    IXTQ160N075T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 160A TO-3P Original PDF
    IXTQ160N085T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 85V 160A TO-3P Original PDF
    IXTQ160N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 160A TO-3P Original PDF
    IXTQ16N50P IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF
    IXTQ170N10P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF

    IXTQ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTQ48N20T

    Abstract: IXTP48N20T IXTP48N20 48N20 42100I
    Text: TrenchTM Power MOSFET IXTA48N20T IXTP48N20T IXTQ48N20T VDSS = 200V = 48A ID25 Ω RDS on ≤ 50mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXTA48N20T IXTP48N20T IXTQ48N20T O-263 O-220AB 062in. Plastic60 48N20T 2-12-10-A IXTQ48N20T IXTP48N20T IXTP48N20 48N20 42100I PDF

    IXTQ170N10P

    Abstract: IXTK170N10P IXTT170N10P
    Text: IXTT170N10P IXTQ170N10P IXTK170N10P PolarTM Power MOSFET VDSS ID25 = 100V = 170A ≤ 9mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTT170N10P IXTQ170N10P IXTK170N10P O-268 IXTT170N10P 170N10P 01-07-10-C IXTQ170N10P IXTK170N10P PDF

    IXTQ69N30PM

    Abstract: IXTQ69N30 ixtq69n30p
    Text: Advance Technical Information IXTQ69N30PM PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 300V = 25A Ω ≤ 49mΩ OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ


    Original     		IXTQ69N30PM 100ms 69N30P 0-16-09-A IXTQ69N30PM IXTQ69N30 ixtq69n30p PDF

    AA145

    Abstract: IXTQ470P2 IXTQ
    Text: Advance Technical Information IXTQ470P2 PolarP2TM Power MOSFET VDSS ID25 RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500


    Original     		IXTQ470P2 400ns 338B2 AA145 IXTQ470P2 IXTQ PDF

    IXTP450P2

    Abstract: IXTH450P2 IXTQ450P2
    Text: Advance Technical Information IXTP450P2 IXTQ450P2 IXTH450P2 PolarP2TM Power MOSFET VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Symbol Test Conditions Maximum Ratings


    Original     		IXTP450P2 IXTQ450P2 IXTH450P2 400ns O-220AB 338B2 IXTP450P2 IXTH450P2 IXTQ450P2 PDF

    36p15

    Abstract: IXTP36P15P 3-26-08-B
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS


    Original     		O-263 IXTA36P15P IXTP36P15P IXTQ36P15P O-220 100ms 36P15P 36p15 3-26-08-B PDF

    IXTP10P50P

    Abstract: 10P50P IXTH10P50P IXTH10P50
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P S G D TAB D D(TAB) S G Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500


    Original     		O-263 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P O-247 O-220 100ms 10P50P IXTH10P50 PDF

    52P10p

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS


    Original     		O-263 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P O-247 O-220 100ms 52P10p PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Infomation Trenchgate Power MOSFET IXTQ 64N28T VDSS ID25 RDS on = 280 V = 64 A Ω = 49 mΩ N-Channel Enhancement Mode For Plasma Display Application Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 280 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		64N28T PDF

    22N50P

    Abstract: IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P
    Text: PolarHVTM Power MOSFET IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS N-Channel Enhancement Mode Avalanche Rated = 500 V = 22 A ≤ 270 mΩ Ω VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		22N50P 22N50PS O-247 PLUS220 IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P PDF

    180N055T

    Abstract: No abstract text available
    Text: Advance Technical Information IXTQ 180N055T IXTA 180N055T IXTP 180N055T Trench Gate Power MOSFET VDSS ID25 = 55 V = 180 A Ω = 4.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		180N055T O-220 180N055T PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM IXTP 180N055T IXTQ 180N055T VDSS = 55 V ID25 = 180 A Ω RDS on = 4.0 mΩ TO-220 (IXTP) Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1


    Original     		ISOPLUS220TM 180N055T 180N055T O-220 O-220) 123B1 728B1 065B1 IXTP180N055T PDF

    IXTA32P20T

    Abstract: ixth32p20t IXTQ32P20T IXTP32P20T
    Text: Preliminary Technical Information IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 RDS(on) TO-220AB (IXTP) G D S G DS S D (Tab) Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		O-263 IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T O-220AB O-247 ixth32p20t PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 69N30P IXTT 69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSS Transient ±20


    Original     		69N30P 69N30P O-268 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTA 62N15P IXTP 62N15P IXTQ 62N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = 150 V = 62 A ≤ 40 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		62N15P O-263 O-220 62N15P PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH160N10T IXTQ160N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V


    Original     		IXTH160N10T IXTQ160N10T O-247 160N10T 1-16-06-A PDF

    23N60

    Abstract: No abstract text available
    Text: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		23N60Q 728B1 123B1 728B1 065B1 23N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		18N60P 18N60PS 18N60P PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = 150V 90A Ω 20mΩ RDS on ≤ TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T O-263 O-247 90N15T 8-07-A PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR


    Original     		30N50P 30N50PS O-247 30N50P O-247 PLUS220 PDF

    82N25P

    Abstract: TO-264 Package 5 lead 82n25 C500W ixtq IXYS 82N25P Ixtq82n25p
    Text: IXTK 82N25P IXTQ 82N25P IXTT 82N25P PolarHTTM Power MOSFET VDSS ID25 = 250 V = 82 A ≤ 35 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		82N25P 82N25P TO-264 Package 5 lead 82n25 C500W ixtq IXYS 82N25P Ixtq82n25p PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS ID25 IXTQ 64N25P IXTT 64N25P = = ≤ RDS on 250 V 64 A Ω 49 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 250 250 V V VGSS VGSM Continuous


    Original     		64N25P O-268 PDF

    10P50P

    Abstract: IXTP10P50P IXTH10P50P IXTA10P50P IXTQ10P50P IXTP10P50 IXTH10P50
    Text: PolarPTM Power MOSFET IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P P-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G VDSS ID25 RDS(on) TO-220 (IXTP) G G D(TAB) D S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P O-263 O-220 O-247 100ms IXTA10P50P 10P50P IXTP10P50P IXTH10P50P IXTQ10P50P IXTP10P50 IXTH10P50 PDF

    22n60p

    Abstract: 22n60 IXTQ22N60P PLUS220SMD
    Text: PolarHVTM Power MOSFET IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS on = 600 V = 22 A ≤ 350 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		22N60P 22N60PS 22n60p 22n60 IXTQ22N60P PLUS220SMD PDF