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IXYS Corporation IXTV30N50P MOSFET N-CH 500V 30A PLUS220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTV30N50P	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXFV30N50P MOSFET N-CH 500V 30A PLUS220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFV30N50P	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXTT30N50P MOSFET N-CH 500V 30A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT30N50P	Tube			300	1 - 10 - 100 - 1000 $9.99687 10000 $9.99687	Buy Now
Littelfuse Inc IXFH30N50P MOSFET N-CH 500V 30A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH30N50P	Tube			1	1 $9.56 10 $9.56 100 $7.41867 1000 $5.72045 10000 $5.72045	Buy Now
RS	IXFH30N50P	Bulk		8 Weeks	30	1 - 10 - 100 $7.25 1000 $7.25 10000 $7.25	Get Quote
Littelfuse Inc IXTH30N50P MOSFET N-CH 500V 30A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH30N50P	Tube			1	1 $6.58 10 $6.58 100 $6.05133 1000 $4.65288 10000 $4.65288	Buy Now
Newark	IXTH30N50P	Bulk			300	1 - 10 - 100 - 1000 $4.88 10000 $4.88	Buy Now

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30N50P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TO-3P weight Abstract: ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16 Contextual Info: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)	Original	30N50P 30N50PS PLUS220 TO-3P weight ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16	PDF
ixys ixfh 30n50p Contextual Info: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)	Original	30N50P 30N50PS PLUS220 ixys ixfh 30n50p	PDF
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 30N50P VDSS ID25 RDS on Electrically Isolated Back Surface = 500 V = 17 A ≤ 225 mΩ Ω N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	30N50P ISOPLUS220TM E153432 405B2	PDF
Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR	Original	30N50P 30N50PS O-247 30N50P O-247 PLUS220	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS on trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings	Original	30N50P 30N50PS O-247 30N50P O-247	PDF
DS99415 Contextual Info: Advance Technical Information PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement ModeAvalanche Rated RDS on = 500 V = 30 A Ω = 200 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings	Original	30N50P 30N50PS O-247 O-268 PLUS220 DS99415	PDF
QG SMD TRANS Abstract: PLUS220SMD smd diode 819 Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS on trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings	Original	30N50P 30N50PS O-247 30N50P O-247 QG SMD TRANS PLUS220SMD smd diode 819	PDF
QG SMD TRANS Abstract: PLUS220SMD Contextual Info: Advance Technical Information PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement ModeAvalanche Rated RDS on = 500 V = 30 A Ω = 200 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings	Original	30N50P 30N50PS PLUS220 QG SMD TRANS PLUS220SMD	PDF
30N50P Abstract: 30N50 PLUS220SMD IXTH30N50P to-3p mounting IXTQ30N50P Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR	Original	30N50P 30N50PS O-247 30N50P O-247 PLUS220 30N50 PLUS220SMD IXTH30N50P to-3p mounting IXTQ30N50P	PDF
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF