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Rochester Electronics LLC MGP14N60E IGBT, 18A, 600V, N-CHANNEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MGP14N60E	Bulk	5,908		592	1 - 10 - 100 - 1000 $0.51 10000 $0.51	Buy Now
Vishay Siliconix SIHD14N60ET5-GE3 N-CHANNEL 600V
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DigiKey	SIHD14N60ET5-GE3	Cut Tape	2,996		1	1 $3.02 10 $1.962 100 $3.02 1000 $1.0145 10000 $1.0145	Buy Now
Vishay Siliconix SIHD14N60ET4-GE3 N-CHANNEL 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHD14N60ET4-GE3	Cut Tape	2,960		1	1 $3.02 10 $1.962 100 $3.02 1000 $1.0145 10000 $1.0145	Buy Now
Vishay Siliconix SIHA14N60E-GE3 N-CHANNEL 600V
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DigiKey	SIHA14N60E-GE3	Tube	2,920		1	1 $2.17 10 $2.17 100 $2.17 1000 $0.9575 10000 $0.9575	Buy Now
Vishay Siliconix SIHH14N60EF-T1-GE3 MOSFET N-CH 600V 15A PPAK 8 X 8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHH14N60EF-T1-GE3	Digi-Reel	2,870		1	1 $4.86 10 $3.744 100 $4.86 1000 $2.2683 10000 $2.2683	Buy Now
	SIHH14N60EF-T1-GE3	Cut Tape	2,870		1	1 $4.86 10 $3.744 100 $4.86 1000 $2.2683 10000 $2.2683	Buy Now

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14N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
14N60E Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M GW 14N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 14N 60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged	OCR Scan	14N60ED/D 14N60E	PDF
Untitled Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION IXTA 14N60P IXTP 14N60P IXTQ 14N60P PolarHVTM Power MOSFET VDSS ID25 = 600 V = 14 A ≤ 550 mΩ Ω RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	14N60P 405B2	PDF
14n60P Abstract: 14n60 IXFA14N60P Text: PolarHVTM HiPerFET Power MOSFET IXFA 14N60P IXFH 14N60P IXFP 14N60P VDSS = 600 V ID25 = 14 A Ω RDS on ≤ 550 mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	14N60P O-263 14N60P 14n60 IXFA14N60P	PDF
14n60 Abstract: 14N60P IXYS DS Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 8 A Ω RDS on ≤ 630 mΩ ≤ 200 ns trr IXFC 14N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	ISOPLUS220TM 14N60P 02-27-06-C 14n60 14N60P IXYS DS	PDF
14n60p Abstract: No abstract text available Text: IXTA 14N60P IXTP 14N60P IXTQ 14N60P PolarHVTM Power MOSFET VDSS ID25 = 600 V = 14 A ≤ 550 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous	Original	14N60P 14N60P O-263 O-220	PDF
14n60 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION IXFC 14N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on = 600 V = 8 A ≤ 620 mΩ Ω Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	14N60P 14n60	PDF
14n60 Abstract: 14n60P Text: ADVANCE TECHNICAL INFORMATION IXFA 14N60P IXFP 14N60P IXFH 14N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 = 600 V = 14 A ≤ 550 mΩ Ω RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	14N60P 14N60P 14n60	PDF
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P	PDF
scr 106d Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226 Text: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007	OCR Scan	to-18 2n876 2n884 2n877 2n885 2n3001 2n3005 2nw121 tag520f tag521f scr 106d SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226	PDF
14n60 Abstract: OT360 14N60E OC57 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 14N60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packag ed w ith a soft recovery u ltra -fa s t re ctifier and uses an advanced	OCR Scan	14N60ED 14n60 OT360 14N60E OC57	PDF
scr tag 2 200 Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138 Text: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE	OCR Scan	2N2322 2N2322A BTX30- 2N2323 2N2323A BTX30-100 2N2324 2N2324A TAG611-100 TAG612-100 scr tag 2 200 scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138	PDF
BSTB0246 Abstract: BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D Text: MANUFACTURERS T E C H N IC A L DATA SHOULD TAG nearest Equivalent Type TAG nearest Equivalent Type AA AA AA AA AA 107 108 109 110 111 2N 2N 2N 2N 2N BRX BRY BRY BRY BRY 66 54-100 54-200 54-300 54-400 BRX TAG TAG TAG TAG 66 611-100 611-200 611-300 611-400 AA	OCR Scan	55-500M 55-600M 55-700M 55-800M 2-800RU 92-1000RM 92-1000RU 16N-400DM 16N-400DU 16N-600DM BSTB0246 BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF