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Littelfuse Inc IXTN90N25L2 MOSFET N-CH 250V 90A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTN90N25L2	Tube	880		1	1 $44.37 10 $34.803 100 $34.803 1000 $34.803 10000 $34.803	Buy Now
Arrow Electronics	IXTN90N25L2		270		1	1 $43.0834 10 $38.1541 100 $35.3921 1000 $35.3921 10000 $35.3921	Buy Now
Newark	IXTN90N25L2	Bulk	300		1	1 $43.48 10 $35.11 100 $35.11 1000 $35.11 10000 $35.11	Buy Now
Littelfuse Inc IXTN60N50L2 MOSFET N-CH 500V 53A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTN60N50L2	Tube	877		1	1 $44.37 10 $34.803 100 $34.803 1000 $34.803 10000 $34.803	Buy Now
Verical	IXTN60N50L2		130		1	1 $44.9426 10 $44.9426 100 $44.9426 1000 $44.9426 10000 $44.9426	Buy Now
Arrow Electronics	IXTN60N50L2		130	44 Weeks	1	1 $44.4342 10 $44.4342 100 $44.4342 1000 $44.4342 10000 $44.4342	Buy Now
Littelfuse Inc IXTN30N100L MOSFET N-CH 1000V 30A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTN30N100L	Tube	598		1	1 $64.82 10 $54.754 100 $54.754 1000 $54.754 10000 $54.754	Buy Now
Verical	IXTN30N100L		300		10	1 - 10 $54.63 100 $54.63 1000 $54.63 10000 $54.63	Buy Now
Arrow Electronics	IXTN30N100L		309	57 Weeks	10	1 - 10 $54.63 100 $54.63 1000 $54.63 10000 $54.63	Buy Now
Newark	IXTN30N100L	Bulk			300	1 - 10 - 100 $57.39 1000 $57.39 10000 $57.39	Buy Now
Littelfuse Inc IXTN200N10L2 MOSFET N-CH 100V 178A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTN200N10L2	Tube	370		1	1 $49.02 10 $37.023 100 $49.02 1000 $49.02 10000 $49.02	Buy Now
Verical	IXTN200N10L2		96		1	1 $42.0877 10 $35.6237 100 $35.6237 1000 $35.6237 10000 $35.6237	Buy Now
Arrow Electronics	IXTN200N10L2		96	44 Weeks	1	1 $41.6116 10 $35.2207 100 $35.2207 1000 $35.2207 10000 $35.2207	Buy Now
Littelfuse Inc IXTN102N65X2 MOSFET N-CH 650V 76A SOT227
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTN102N65X2	Tube	327		1	1 $30.6 10 $23.304 100 $30.6 1000 $30.6 10000 $30.6	Buy Now

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IXTN Datasheets (37)

Part	Manufacturer	Description	Datasheet Type	PDF
IXTN102N65X2	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 76A X2 SOT-227	Original	PDF
IXTN110N20L2	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 200V 100A SOT-227	Original	PDF
IXTN120P20T	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 200V 106A SOT-227	Original	PDF
IXTN15N100	IXYS	N-Channel Enhancement-Mode MegaMOS FET	Scan	PDF
IXTN15N100	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IXTN170P10P	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET P-CH 100V 170A SOT227	Original	PDF
IXTN17N120L	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 15A SOT-227B	Original	PDF
IXTN200N10L2	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 178A SOT-227	Original	PDF
IXTN200N10T	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 200A SOT-227	Original	PDF
IXTN210P10T	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 210A SOT-227	Original	PDF
IXTN21N100	IXYS	600V high voltage megaMOS FET	Original	PDF
IXTN22N100L	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 22A SOT-227	Original	PDF
IXTN240N075L2	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH	Original	PDF
IXTN30N100L	IXYS	Power MOSFETs with Extended FBSOA	Original	PDF

IXTN320N10T	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 320A SOT-227B	Original	PDF
IXTN32P60P	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET P-CH 600V 32A SOT227	Original	PDF
IXTN36N45	IXYS	Power MOSFET	Scan	PDF
IXTN36N45	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IXTN36N50	IXYS	Power MOSFET	Scan	PDF
IXTN36N50	IXYS	N-Channel Enhancement Mode	Scan	PDF

IXTN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXTN17N120L Abstract: No abstract text available Text: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	PDF	IXTN17N120L OT-227 E153432 17N120L IXTN17N120L
IXTN8N150L Abstract: No abstract text available Text: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTN8N150L D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω RDS on G S S miniBLOC, SOT-227 B E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXTN8N150L OT-227 E153432 8N15L 100ms IXTN8N150L
Untitled Abstract: No abstract text available Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTN120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings	Original	PDF	IXTN120P20T 300ns E153432 150nds 120P20T
IXTN17N120L Abstract: No abstract text available Text: LinearTM Power MOSFET w/ Extended FBSOA IXTN17N120L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ G S S miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V	Original	PDF	IXTN17N120L E153432 100ms 17N120L 02-18-09-B IXTN17N120L
ixtn8n150l Abstract: 013009 ixtn8n Text: Preliminary Technical Information IXTN8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 RDS on D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω G S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXTN8N150L OT-227 E153432 8N15L 100ms ixtn8n150l 013009 ixtn8n
IXtN200N10 Abstract: IXTN200N10T 200N10T Text: Preliminary Technical Information IXTN200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTN200N10T OT-227 E153432 200N10T 9-30-08-D IXtN200N10 IXTN200N10T
IXTN46N50L Abstract: 1614G Text: Preliminary Technical Information Linear Power MOSFET IXTN46N50L With Extended FBSOA VDSS ID25 D = 500 = 46 ≤ 0.16 RDS on N-Channel Enhancement Mode V A Ω G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	IXTN46N50L OT-227 E153432 46N50L 5-07-A IXTN46N50L 1614G
Untitled Abstract: No abstract text available Text: Preliminary Technical Information IXTN120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns G miniBLOC E153432 S S S G Symbol Test Conditions VDSS	Original	PDF	IXTN120P20T 300ns E153432 120P20T
Untitled Abstract: No abstract text available Text: PolarPTM Power MOSFET VDSS ID25 IXTN170P10P RDS on = = ≤ -100V -170A Ω 12mΩ P-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTN170P10P -100V -170A OT-227 E153432 100ms 170P10P 3-25-09-C
Untitled Abstract: No abstract text available Text: IXTN170P10P PolarPTM Power MOSFET VDSS ID25 RDS on D P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -170A Ω 12mΩ G S S miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTN170P10P -100V -170A OT-227 E153432 100ms 170P10P 3-25-09-C
46N50L Abstract: IXTN Text: Power MOSFETs with Extended FBSOA IXTN 46N50L N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = 500 = 46 RDS on = 0.16 V A Ω Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25oC to 150oC 500 V VDGR TJ = 25oC to 150oC; RGS = 1 MΩ 500 V VGS Continuous	Original	PDF	46N50L 150oC 150oC; OT-227 E153432 Sourc40 46N50L IXTN
IXTN40P50P Abstract: No abstract text available Text: PolarPTM Power MOSFET IXTN40P50P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 500V - 40A Ω 230mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings - 500 VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTN40P50P OT-227 E153432 100ms 40P50P 3-06-08-A IXTN40P50P
ixys ixtn 79n20 Abstract: 79N20 IXTN79N20 ixtn 79n20 Text: MegaMOSTMFET IXTN 79N20 VDSS = 200 V = 85 A Ω = 25 mΩ ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 200 V VGS Continuous ±20 V VGSM Transient	Original	PDF	79N20 OT-227 79N20 ixys ixtn 79n20 IXTN79N20 ixtn 79n20
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarPTM Power MOSFET IXTN32P60P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 600V - 32A Ω 350mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings	Original	PDF	IXTN32P60P OT-227 E153432 2500ias 100ms 32P60P

Untitled Abstract: No abstract text available Text: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN17N120L D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ RDS on G S S miniBLOC E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V	Original	PDF	IXTN17N120L E153432 100ms 17N120L 02-18-09-B
Untitled Abstract: No abstract text available Text: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTN210P10T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings	Original	PDF	IXTN210P10T -100V 200ns E153432 -100A 210P10T
IXTN600N04T2 Abstract: No abstract text available Text: Preliminary Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTN600N04T2 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings	Original	PDF	IXTN600N04T2 OT-227 E153432 600N04T2 IXTN600N04T2
IXTN30N100L Abstract: No abstract text available Text: LinearTM Power MOSFET w/ Extended FBSOA IXTN30N100L VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTN30N100L E153432 30N100L 5-07-A IXTN30N100L
1xys Abstract: IXTN36N50 36N50 E72873 IXTN36N45 Text: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500	OCR Scan	PDF	IXTN36N45 IXTN36N50 IXTN36N45 Cto150Â IXTN36N D-68619; 1xys IXTN36N50 36N50 E72873
21N100 Abstract: 21N10 ixtw DIXYS IXTN21N100 Text: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ	OCR Scan	PDF	21N100 O-264 Cto150 OT-227 21N100 21N10 ixtw DIXYS IXTN21N100
1SN10 Abstract: No abstract text available Text: IXYS IXTN15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs	OCR Scan	PDF	IXTN15N100 OT-227 E1S3432 C2-98 15N100 C2-99 1SN10
diode c248 Abstract: IXTN36N50 C248 diode Text: D IX Y S IXTN36N50 MegaMOS FET V DSS = 5 0 0 V *D25 = 3 6 A ^D S o n = 0 .1 2 Q N-Channel Enhancement Mode Symbol Test Conditions v OSS ^ Maximum Ratings miniBLOC, SOT-227 B T O E153432 500 V Tj = 25°C to 150°C; RQS= 10 k£2 500 V v GS VGSM Continuous	OCR Scan	PDF	IXTN36N50 OT-227 E153432 C2-50 C2-51 diode c248 C248 diode
DIODE B44 sot Abstract: IXTK21 B44 diode IXTN21N100 Text: IXTK21 N100 IXTN21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V	OCR Scan	PDF	IXTK21 IXTN21N100 O-264 21N100 21N100 DIODE B44 sot B44 diode IXTN21N100
ixys ixtn 36n50 Abstract: 36N50 IXTN 36N50 C IXYS 36N50 ac motor forward reverse control ixtn36n50 IXTN 36N50 Text: IXYS_ MegaMOS FET IXTN 36N50 VDSS = 500 V U = 36A DS on — 12 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =2 5°C to 150°C 500 V V 0GR T j = 2 5 °C to 150°C; RGS= 10ki2 500 V Vos Continuous 120 V v GSM	OCR Scan	PDF	36N50 10ki2 OT-227 E153432 C2-46 36N50 ixys ixtn 36n50 IXTN 36N50 C IXYS 36N50 ac motor forward reverse control ixtn36n50 IXTN 36N50

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Littelfuse Inc IXTN90N25L2

Littelfuse Inc IXTN60N50L2

Littelfuse Inc IXTN30N100L

Littelfuse Inc IXTN200N10L2

Littelfuse Inc IXTN102N65X2

IXTN Datasheets (37)

IXTN Datasheets Context Search

IXTN17N120L

IXTN8N150L

Untitled

IXTN17N120L

ixtn8n150l

IXtN200N10

IXTN46N50L

Untitled

Untitled

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46N50L

IXTN40P50P

ixys ixtn 79n20

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IXTN600N04T2

IXTN30N100L

1xys

21N100

1SN10

diode c248

DIODE B44 sot

ixys ixtn 36n50